SG190992A1 - Underlayer coating composition and process for manufacturing a microelectronic device - Google Patents

Underlayer coating composition and process for manufacturing a microelectronic device Download PDF

Info

Publication number
SG190992A1
SG190992A1 SG2013043054A SG2013043054A SG190992A1 SG 190992 A1 SG190992 A1 SG 190992A1 SG 2013043054 A SG2013043054 A SG 2013043054A SG 2013043054 A SG2013043054 A SG 2013043054A SG 190992 A1 SG190992 A1 SG 190992A1
Authority
SG
Singapore
Prior art keywords
polymer
composition
fluoro
moiety
alkyl
Prior art date
Application number
SG2013043054A
Other languages
English (en)
Inventor
Huirong Yao
Zachary Bogusz
Guangyang Lin
Mark O Neisser
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Publication of SG190992A1 publication Critical patent/SG190992A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L67/00—Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/20—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C09D161/22—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
    • C09D161/24—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds with urea or thiourea
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG2013043054A 2011-02-08 2012-02-07 Underlayer coating composition and process for manufacturing a microelectronic device SG190992A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/023,291 US8465902B2 (en) 2011-02-08 2011-02-08 Underlayer coating composition and processes thereof
PCT/IB2012/000213 WO2012107823A1 (en) 2011-02-08 2012-02-07 Underlayer coating composition and process for manufacturing a microelectronic device

Publications (1)

Publication Number Publication Date
SG190992A1 true SG190992A1 (en) 2013-07-31

Family

ID=45815912

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013043054A SG190992A1 (en) 2011-02-08 2012-02-07 Underlayer coating composition and process for manufacturing a microelectronic device

Country Status (8)

Country Link
US (1) US8465902B2 (OSRAM)
EP (1) EP2673675B1 (OSRAM)
JP (1) JP6109750B2 (OSRAM)
KR (1) KR101824759B1 (OSRAM)
CN (1) CN103370653B (OSRAM)
SG (1) SG190992A1 (OSRAM)
TW (1) TWI545161B (OSRAM)
WO (1) WO2012107823A1 (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8906590B2 (en) * 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
KR102364126B1 (ko) * 2014-03-24 2022-02-18 제이에스알 가부시끼가이샤 패턴 형성 방법, 수지 및 레지스트 하층막 형성 조성물
KR101982103B1 (ko) * 2015-08-31 2019-05-27 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 오버코팅된 포토레지스트와 함께 사용하기 위한 코팅 조성물
TWI646397B (zh) * 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
CN109073977B (zh) * 2016-04-28 2022-04-05 日产化学株式会社 抗蚀剂下层膜形成用组合物
JP6531723B2 (ja) * 2016-06-29 2019-06-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
WO2018180049A1 (ja) * 2017-03-30 2018-10-04 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
JP7435439B2 (ja) * 2018-05-25 2024-02-21 日産化学株式会社 環式カルボニル化合物を用いたレジスト下層膜形成組成物
KR102288386B1 (ko) * 2018-09-06 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
CN109638156B (zh) * 2018-12-10 2020-09-01 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制作方法
KR102260811B1 (ko) 2018-12-26 2021-06-03 삼성에스디아이 주식회사 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법
US12366804B2 (en) * 2019-06-17 2025-07-22 Nissan Chemical Corporation Composition containing a heterocyclic compound having a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched
TWI837443B (zh) * 2019-12-31 2024-04-01 南韓商羅門哈斯電子材料韓國公司 塗料組成物、經塗覆的基底及形成電子裝置的方法
WO2024070786A1 (ja) * 2022-09-30 2024-04-04 Jsr株式会社 レジスト下層膜形成用組成物及び半導体基板の製造方法
TW202502879A (zh) * 2023-02-27 2025-01-16 日商日產化學股份有限公司 阻劑下層膜形成用組成物
CN120883140A (zh) * 2023-03-27 2025-10-31 日产化学株式会社 抗蚀剂下层膜形成用组合物

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474054A (en) 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP4425405B2 (ja) * 2000-02-04 2010-03-03 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
WO2001098834A1 (en) 2000-06-21 2001-12-27 Asahi Glass Company, Limited Resist composition
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
KR100776551B1 (ko) 2001-02-09 2007-11-16 아사히 가라스 가부시키가이샤 레지스트 조성물
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP4084597B2 (ja) * 2002-05-07 2008-04-30 群栄化学工業株式会社 アミノ基含有フェノール誘導体
KR101026127B1 (ko) * 2002-10-09 2011-04-05 닛산 가가쿠 고교 가부시키 가이샤 리소그라피용 반사방지막 형성 조성물
US7264913B2 (en) 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP4069025B2 (ja) * 2003-06-18 2008-03-26 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP2005321752A (ja) * 2004-04-09 2005-11-17 Nissan Chem Ind Ltd イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
US7691556B2 (en) 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP4575220B2 (ja) * 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
CN101268419A (zh) * 2005-09-27 2008-09-17 日产化学工业株式会社 含有异氰脲酸化合物与苯甲酸化合物的反应生成物的形成防反射膜的组合物
US7736822B2 (en) * 2006-02-13 2010-06-15 Hoya Corporation Resist underlayer coating forming composition for mask blank, mask blank and mask
US7638262B2 (en) 2006-08-10 2009-12-29 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US20080286689A1 (en) 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
US8329387B2 (en) 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US8551686B2 (en) 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists

Also Published As

Publication number Publication date
JP6109750B2 (ja) 2017-04-05
US20120202155A1 (en) 2012-08-09
TWI545161B (zh) 2016-08-11
TW201239047A (en) 2012-10-01
EP2673675A1 (en) 2013-12-18
US8465902B2 (en) 2013-06-18
JP2014513312A (ja) 2014-05-29
WO2012107823A1 (en) 2012-08-16
CN103370653A (zh) 2013-10-23
KR101824759B1 (ko) 2018-02-01
EP2673675B1 (en) 2020-07-15
KR20140032972A (ko) 2014-03-17
CN103370653B (zh) 2016-06-08

Similar Documents

Publication Publication Date Title
EP2673675B1 (en) Underlayer coating composition and process for manufactiuring a microelectronic device
US8329387B2 (en) Antireflective coating compositions
US7932018B2 (en) Antireflective coating composition
EP1131678B1 (en) Antireflective composition for a deep ultraviolet photoresist
US20100092894A1 (en) Bottom Antireflective Coating Compositions
US7378217B2 (en) Antireflective hardmask composition and methods for using same
US8486609B2 (en) Antireflective coating composition and process thereof
US20100316949A1 (en) Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US20090130591A1 (en) Antireflective Coating Composition and Process Thereof
EP2577361B1 (en) Antireflective coating composition and process for manufacturing microelectronic device
US9170494B2 (en) Antireflective compositions and methods of using same