SG189201A1 - Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes - Google Patents

Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes Download PDF

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Publication number
SG189201A1
SG189201A1 SG2013024179A SG2013024179A SG189201A1 SG 189201 A1 SG189201 A1 SG 189201A1 SG 2013024179 A SG2013024179 A SG 2013024179A SG 2013024179 A SG2013024179 A SG 2013024179A SG 189201 A1 SG189201 A1 SG 189201A1
Authority
SG
Singapore
Prior art keywords
filament
temperature
gas
hwcvd
substrate
Prior art date
Application number
SG2013024179A
Other languages
English (en)
Inventor
Bipin Thakur
Cruz Joe Griffith
Stefan Keller
Vikas Gujar
Ravindra Janu Patil
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG189201A1 publication Critical patent/SG189201A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG2013024179A 2010-10-22 2011-10-20 Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes SG189201A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40567010P 2010-10-22 2010-10-22
US13/267,309 US8709537B2 (en) 2010-10-22 2011-10-06 Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes
PCT/US2011/057022 WO2012054688A2 (en) 2010-10-22 2011-10-20 Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes

Publications (1)

Publication Number Publication Date
SG189201A1 true SG189201A1 (en) 2013-05-31

Family

ID=45973240

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013024179A SG189201A1 (en) 2010-10-22 2011-10-20 Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes

Country Status (7)

Country Link
US (1) US8709537B2 (cg-RX-API-DMAC10.html)
JP (1) JP5972885B2 (cg-RX-API-DMAC10.html)
KR (1) KR101594770B1 (cg-RX-API-DMAC10.html)
CN (1) CN103168115B (cg-RX-API-DMAC10.html)
SG (1) SG189201A1 (cg-RX-API-DMAC10.html)
TW (1) TWI488992B (cg-RX-API-DMAC10.html)
WO (1) WO2012054688A2 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US10794853B2 (en) 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4919974A (en) * 1989-01-12 1990-04-24 Ford Motor Company Making diamond composite coated cutting tools
JPH11202099A (ja) 1998-01-13 1999-07-30 Nissin High Voltage Co Ltd 電子線加速器のクリーニング方法
JP2000269142A (ja) * 1999-03-17 2000-09-29 Sony Corp 窒化ガリウムエピタキシャル層の形成方法及び発光素子
US6627050B2 (en) * 2000-07-28 2003-09-30 Applied Materials, Inc. Method and apparatus for depositing a tantalum-containing layer on a substrate
EP1258914B1 (en) * 2000-09-14 2006-11-22 Japan as represented by President of Japan Advanced Institute of Science and Technology Heating element cvd device
KR20020083767A (ko) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 선택적 에피택셜 성장 공정에서의 기판 세정 방법
CN1168847C (zh) * 2002-03-30 2004-09-29 燕山大学 MgB2超导薄膜的原位热丝化学气相沉积制备方法
US7220665B2 (en) 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
US7097713B2 (en) * 2003-08-19 2006-08-29 The Boc Group, Inc. Method for removing a composite coating containing tantalum deposition and arc sprayed aluminum from ceramic substrates
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
WO2006098300A1 (ja) * 2005-03-16 2006-09-21 Hitachi Kokusai Electric Inc. 基板処理方法及び基板処理装置
US7727590B2 (en) * 2006-05-18 2010-06-01 California Institute Of Technology Robust filament assembly for a hot-wire chemical vapor deposition system
JP4308281B2 (ja) * 2007-04-23 2009-08-05 三洋電機株式会社 光起電力素子の製造方法
US8409351B2 (en) * 2007-08-08 2013-04-02 Sic Systems, Inc. Production of bulk silicon carbide with hot-filament chemical vapor deposition
US8043976B2 (en) * 2008-03-24 2011-10-25 Air Products And Chemicals, Inc. Adhesion to copper and copper electromigration resistance
CN101325153A (zh) * 2008-07-16 2008-12-17 上海大学 一种半导体基片热沉复合材料的制备方法

Also Published As

Publication number Publication date
KR20130141539A (ko) 2013-12-26
WO2012054688A2 (en) 2012-04-26
TWI488992B (zh) 2015-06-21
TW201229296A (en) 2012-07-16
WO2012054688A3 (en) 2012-06-07
JP5972885B2 (ja) 2016-08-17
US20120100312A1 (en) 2012-04-26
JP2013546178A (ja) 2013-12-26
CN103168115A (zh) 2013-06-19
CN103168115B (zh) 2016-01-06
US8709537B2 (en) 2014-04-29
KR101594770B1 (ko) 2016-02-26

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