SG170108A1 - Composition and method to polish silicon nitride - Google Patents

Composition and method to polish silicon nitride

Info

Publication number
SG170108A1
SG170108A1 SG201101794-4A SG2011017944A SG170108A1 SG 170108 A1 SG170108 A1 SG 170108A1 SG 2011017944 A SG2011017944 A SG 2011017944A SG 170108 A1 SG170108 A1 SG 170108A1
Authority
SG
Singapore
Prior art keywords
silicon nitride
composition
polishing
polish silicon
polishing composition
Prior art date
Application number
SG201101794-4A
Other languages
English (en)
Inventor
Zhan Chen
Robert Vacassy
Phillip Carter
Jeffrey Dysard
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG170108A1 publication Critical patent/SG170108A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG201101794-4A 2006-03-13 2007-03-06 Composition and method to polish silicon nitride SG170108A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/374,238 US20070209287A1 (en) 2006-03-13 2006-03-13 Composition and method to polish silicon nitride

Publications (1)

Publication Number Publication Date
SG170108A1 true SG170108A1 (en) 2011-04-29

Family

ID=38436739

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201101794-4A SG170108A1 (en) 2006-03-13 2007-03-06 Composition and method to polish silicon nitride

Country Status (10)

Country Link
US (1) US20070209287A1 (ru)
EP (1) EP1994107A2 (ru)
JP (1) JP5524607B2 (ru)
KR (1) KR101371939B1 (ru)
CN (2) CN102604541B (ru)
IL (1) IL192527A (ru)
MY (1) MY153685A (ru)
SG (1) SG170108A1 (ru)
TW (1) TWI363797B (ru)
WO (1) WO2007108926A2 (ru)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
CN103131330B (zh) * 2008-02-01 2015-09-23 福吉米株式会社 研磨用组合物以及使用其的研磨方法
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液
SG177327A1 (en) 2009-06-22 2012-02-28 Cabot Microelectronics Corp Cmp compositions and methods for suppressing polysilicon removal rates
KR101091030B1 (ko) * 2010-04-08 2011-12-09 이화다이아몬드공업 주식회사 감소된 마찰력을 갖는 패드 컨디셔너 제조방법
US20140197356A1 (en) * 2011-12-21 2014-07-17 Cabot Microelectronics Corporation Cmp compositions and methods for suppressing polysilicon removal rates
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
TWI481681B (zh) 2012-05-10 2015-04-21 Air Prod & Chem 具有化學添加物的化學機械硏磨組合物及其使用方法
US9633863B2 (en) 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
EP3124569A4 (en) 2014-03-28 2017-03-15 Fujimi Incorporated Polishing composition, and polishing method using same
US9583359B2 (en) 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
CN105802511A (zh) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN108117838B (zh) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
WO2020245994A1 (ja) * 2019-06-06 2020-12-10 昭和電工マテリアルズ株式会社 研磨液及び研磨方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5773364A (en) * 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6635562B2 (en) * 1998-09-15 2003-10-21 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP4053165B2 (ja) * 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6228727B1 (en) * 1999-09-27 2001-05-08 Chartered Semiconductor Manufacturing, Ltd. Method to form shallow trench isolations with rounded corners and reduced trench oxide recess
US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
US6524168B2 (en) * 2000-06-15 2003-02-25 Rodel Holdings, Inc Composition and method for polishing semiconductors
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
US6872329B2 (en) * 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
JP2002075927A (ja) * 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
EP1369906B1 (en) * 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
US6521523B2 (en) * 2001-06-15 2003-02-18 Silicon Integrated Systems Corp. Method for forming selective protection layers on copper interconnects
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
US6527622B1 (en) * 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030176151A1 (en) * 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US6755721B2 (en) * 2002-02-22 2004-06-29 Saint-Gobain Ceramics And Plastics, Inc. Chemical mechanical polishing of nickel phosphorous alloys
KR100442873B1 (ko) * 2002-02-28 2004-08-02 삼성전자주식회사 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법
US6604987B1 (en) * 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US20040123528A1 (en) * 2002-12-30 2004-07-01 Jung Jong Goo CMP slurry for semiconductor device, and method for manufacturing semiconductor device using the same
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US6918820B2 (en) * 2003-04-11 2005-07-19 Eastman Kodak Company Polishing compositions comprising polymeric cores having inorganic surface particles and method of use
CN100373556C (zh) * 2003-05-28 2008-03-05 日立化成工业株式会社 研磨剂及研磨方法
US6964600B2 (en) * 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution

Also Published As

Publication number Publication date
US20070209287A1 (en) 2007-09-13
MY153685A (en) 2015-03-13
KR20080106575A (ko) 2008-12-08
CN101389722A (zh) 2009-03-18
TWI363797B (en) 2012-05-11
IL192527A0 (en) 2009-02-11
KR101371939B1 (ko) 2014-03-07
JP5524607B2 (ja) 2014-06-18
JP2009530811A (ja) 2009-08-27
TW200740970A (en) 2007-11-01
CN102604541B (zh) 2015-05-20
CN102604541A (zh) 2012-07-25
EP1994107A2 (en) 2008-11-26
IL192527A (en) 2013-08-29
WO2007108926A2 (en) 2007-09-27
WO2007108926A3 (en) 2008-03-20
CN101389722B (zh) 2012-09-05

Similar Documents

Publication Publication Date Title
SG170108A1 (en) Composition and method to polish silicon nitride
TW200605263A (en) Polishing composition and polishing method
TW200617151A (en) Polishing composition and polishing method using the same
MY150866A (en) Compositions and methods for polishing silicon nitride materials
TW200630472A (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
TW200643157A (en) Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method
WO2005033234A3 (en) Novel slurry for chemical mechanical polishing of metals
WO2010120784A8 (en) Chemical mechanical polishing of silicon carbide comprising surfaces
MY149715A (en) Method of polishing nickel-phosphorous
TW201129686A (en) CMP polishing fluid, polishing method of substrate, and electronic component
MY149975A (en) Polishing composition and method utilizing abrasive particles treated with an aminosilane
EP1735826A4 (en) CHIMICO-MECHANICAL POLISHING OF SIC SURFACES USING HYDROGEN PEROXIDE OR OZONEE WATER SOLUTIONS COMBINED WITH COLLOIDAL ABRASIVE
TW200833826A (en) CMP of copper/ruthenium/tantalum substrates
TW200621958A (en) CMP polishing agent and polishing method of substrate
TW200621960A (en) Polishing composition and polishing method using the same
TW200643156A (en) Aqueous dispersant for chemical polishing, chemical polishing method, and kit used in preparation of aqueous dispersant for chemical polishing
EP1770768A3 (en) Polishing method, polishing composition and polishing composition kit
TW200709892A (en) Transparent polishing pad
SG141356A1 (en) Polishing slurry and polishing method using same
ATE371709T1 (de) Polierzusammensetzung und poliermethode
MY151925A (en) Silicon oxide polishing method utilizing colloidal silica
TW200634137A (en) Metal ion-containing CMP composition and method for using the same
TW200511422A (en) Treatment or processing of substrate surfaces
ATE555175T1 (de) Zusammensetzung zum polieren von oberflächen aus siliziumdioxid
TW200745316A (en) Copper-based metal polishing compositions and polishing process