SG166068A1 - Method for writing to and erasing a non-volatile memory - Google Patents

Method for writing to and erasing a non-volatile memory

Info

Publication number
SG166068A1
SG166068A1 SG201002586-4A SG2010025864A SG166068A1 SG 166068 A1 SG166068 A1 SG 166068A1 SG 2010025864 A SG2010025864 A SG 2010025864A SG 166068 A1 SG166068 A1 SG 166068A1
Authority
SG
Singapore
Prior art keywords
erase
volatile memory
time period
command
erasing
Prior art date
Application number
SG201002586-4A
Other languages
English (en)
Inventor
John Rudelic
Original Assignee
John Rudelic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by John Rudelic filed Critical John Rudelic
Publication of SG166068A1 publication Critical patent/SG166068A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Storage Device Security (AREA)
SG201002586-4A 2009-04-14 2010-04-14 Method for writing to and erasing a non-volatile memory SG166068A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/423,226 US8078796B2 (en) 2009-04-14 2009-04-14 Method for writing to and erasing a non-volatile memory

Publications (1)

Publication Number Publication Date
SG166068A1 true SG166068A1 (en) 2010-11-29

Family

ID=42932604

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201002586-4A SG166068A1 (en) 2009-04-14 2010-04-14 Method for writing to and erasing a non-volatile memory

Country Status (6)

Country Link
US (1) US8078796B2 (zh)
JP (1) JP5624797B2 (zh)
KR (1) KR101575369B1 (zh)
CN (1) CN101866692B (zh)
DE (1) DE102010014781A1 (zh)
SG (1) SG166068A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102013031B (zh) * 2010-12-17 2014-05-28 苏州国芯科技有限公司 一种小容量sd卡的读写方法
US9612773B2 (en) * 2013-11-21 2017-04-04 Samsung Electronics Co., Ltd. User device having a host flash translation layer (FTL), a method for transferring an erase count thereof, a method for transferring reprogram information thereof, and a method for transferring a page offset of an open block thereof
US10230948B2 (en) * 2016-02-03 2019-03-12 Mediatek Inc. Video transmitting system with on-the-fly encoding and on-the-fly delivering and associated video receiving system
US11366753B2 (en) * 2018-07-31 2022-06-21 Marvell Asia Pte Ltd Controlling performance of a solid state drive

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0663083B1 (en) * 1992-09-29 2000-12-20 Seiko Epson Corporation System and method for handling load and/or store operations in a superscalar microprocessor
DE10030990B4 (de) * 2000-06-30 2010-11-25 Robert Bosch Gmbh Verfahren zum Beschreiben und Löschen eines nichtflüchtigen Speicherbereichs
JP2008146742A (ja) * 2006-12-08 2008-06-26 Sharp Corp 不揮発性半導体記憶装置及びその処理方法
JP2008146341A (ja) * 2006-12-08 2008-06-26 Sharp Corp 不揮発性半導体記憶装置及びその処理方法
JP2008192271A (ja) * 2007-02-08 2008-08-21 Nec Electronics Corp 半導体装置及びそのテスト方法
JP2010079758A (ja) * 2008-09-29 2010-04-08 Panasonic Corp 不揮発性メモリの自動書き換え中断方法と不揮発性メモリおよびマイクロコンピュータ
JP2010182216A (ja) * 2009-02-09 2010-08-19 Panasonic Corp メモリコントローラ、不揮発性記憶装置、不揮発性記憶システムおよびプログラム

Also Published As

Publication number Publication date
US8078796B2 (en) 2011-12-13
CN101866692A (zh) 2010-10-20
US20100262756A1 (en) 2010-10-14
KR101575369B1 (ko) 2015-12-09
DE102010014781A1 (de) 2010-11-11
JP5624797B2 (ja) 2014-11-12
KR20100113994A (ko) 2010-10-22
JP2010250932A (ja) 2010-11-04
CN101866692B (zh) 2014-11-26

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