CN101866692A - 用于写入和擦除非易失性存储器的方法 - Google Patents
用于写入和擦除非易失性存储器的方法 Download PDFInfo
- Publication number
- CN101866692A CN101866692A CN201010148434A CN201010148434A CN101866692A CN 101866692 A CN101866692 A CN 101866692A CN 201010148434 A CN201010148434 A CN 201010148434A CN 201010148434 A CN201010148434 A CN 201010148434A CN 101866692 A CN101866692 A CN 101866692A
- Authority
- CN
- China
- Prior art keywords
- time cycle
- write operation
- milliseconds
- nonvolatile memory
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
- Storage Device Security (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/423,226 US8078796B2 (en) | 2009-04-14 | 2009-04-14 | Method for writing to and erasing a non-volatile memory |
US12/423,226 | 2009-04-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101866692A true CN101866692A (zh) | 2010-10-20 |
CN101866692B CN101866692B (zh) | 2014-11-26 |
Family
ID=42932604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010148434.8A Active CN101866692B (zh) | 2009-04-14 | 2010-04-14 | 用于写入和擦除非易失性存储器的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8078796B2 (zh) |
JP (1) | JP5624797B2 (zh) |
KR (1) | KR101575369B1 (zh) |
CN (1) | CN101866692B (zh) |
DE (1) | DE102010014781A1 (zh) |
SG (1) | SG166068A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102013031A (zh) * | 2010-12-17 | 2011-04-13 | 苏州国芯科技有限公司 | 一种小容量sd卡 |
CN110780807A (zh) * | 2018-07-31 | 2020-02-11 | 马维尔国际贸易有限公司 | 控制固态驱动器的性能 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9612773B2 (en) * | 2013-11-21 | 2017-04-04 | Samsung Electronics Co., Ltd. | User device having a host flash translation layer (FTL), a method for transferring an erase count thereof, a method for transferring reprogram information thereof, and a method for transferring a page offset of an open block thereof |
US10230948B2 (en) * | 2016-02-03 | 2019-03-12 | Mediatek Inc. | Video transmitting system with on-the-fly encoding and on-the-fly delivering and associated video receiving system |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6973530B2 (en) * | 2000-06-30 | 2005-12-06 | Robert Bosch Gmbh | Method for writing and erasing a non-volatile memory area |
JP2008146742A (ja) * | 2006-12-08 | 2008-06-26 | Sharp Corp | 不揮発性半導体記憶装置及びその処理方法 |
JP2008146341A (ja) * | 2006-12-08 | 2008-06-26 | Sharp Corp | 不揮発性半導体記憶装置及びその処理方法 |
CN101241751A (zh) * | 2007-02-08 | 2008-08-13 | 恩益禧电子股份有限公司 | 半导体器件和测试半导体器件的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0663083B1 (en) * | 1992-09-29 | 2000-12-20 | Seiko Epson Corporation | System and method for handling load and/or store operations in a superscalar microprocessor |
JP2010079758A (ja) * | 2008-09-29 | 2010-04-08 | Panasonic Corp | 不揮発性メモリの自動書き換え中断方法と不揮発性メモリおよびマイクロコンピュータ |
JP2010182216A (ja) * | 2009-02-09 | 2010-08-19 | Panasonic Corp | メモリコントローラ、不揮発性記憶装置、不揮発性記憶システムおよびプログラム |
-
2009
- 2009-04-14 US US12/423,226 patent/US8078796B2/en active Active
-
2010
- 2010-04-13 DE DE102010014781A patent/DE102010014781A1/de not_active Withdrawn
- 2010-04-14 KR KR1020100034401A patent/KR101575369B1/ko active IP Right Grant
- 2010-04-14 JP JP2010106739A patent/JP5624797B2/ja active Active
- 2010-04-14 SG SG201002586-4A patent/SG166068A1/en unknown
- 2010-04-14 CN CN201010148434.8A patent/CN101866692B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6973530B2 (en) * | 2000-06-30 | 2005-12-06 | Robert Bosch Gmbh | Method for writing and erasing a non-volatile memory area |
JP2008146742A (ja) * | 2006-12-08 | 2008-06-26 | Sharp Corp | 不揮発性半導体記憶装置及びその処理方法 |
JP2008146341A (ja) * | 2006-12-08 | 2008-06-26 | Sharp Corp | 不揮発性半導体記憶装置及びその処理方法 |
CN101241751A (zh) * | 2007-02-08 | 2008-08-13 | 恩益禧电子股份有限公司 | 半导体器件和测试半导体器件的方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102013031A (zh) * | 2010-12-17 | 2011-04-13 | 苏州国芯科技有限公司 | 一种小容量sd卡 |
CN102013031B (zh) * | 2010-12-17 | 2014-05-28 | 苏州国芯科技有限公司 | 一种小容量sd卡的读写方法 |
CN110780807A (zh) * | 2018-07-31 | 2020-02-11 | 马维尔国际贸易有限公司 | 控制固态驱动器的性能 |
Also Published As
Publication number | Publication date |
---|---|
US8078796B2 (en) | 2011-12-13 |
SG166068A1 (en) | 2010-11-29 |
US20100262756A1 (en) | 2010-10-14 |
KR101575369B1 (ko) | 2015-12-09 |
DE102010014781A1 (de) | 2010-11-11 |
JP5624797B2 (ja) | 2014-11-12 |
KR20100113994A (ko) | 2010-10-22 |
JP2010250932A (ja) | 2010-11-04 |
CN101866692B (zh) | 2014-11-26 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HENGYI COMPANY Free format text: FORMER OWNER: JOHN RUDELIC Effective date: 20150414 Owner name: MICRON TECHNOLOGY, INC. Free format text: FORMER OWNER: HENGYI COMPANY Effective date: 20150414 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150414 Address after: Idaho Patentee after: Micron Technology, Inc. Address before: Swiss Rolle Patentee before: NUMONYX B.V. Effective date of registration: 20150414 Address after: Swiss Rolle Patentee after: NUMONYX B.V. Address before: California, USA Patentee before: J. Rudlick |