SG162684A1 - Method for the treatment of a semiconductor wafer - Google Patents

Method for the treatment of a semiconductor wafer

Info

Publication number
SG162684A1
SG162684A1 SG200908212-4A SG2009082124A SG162684A1 SG 162684 A1 SG162684 A1 SG 162684A1 SG 2009082124 A SG2009082124 A SG 2009082124A SG 162684 A1 SG162684 A1 SG 162684A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
solution
ozone
contact
containing gas
Prior art date
Application number
SG200908212-4A
Other languages
English (en)
Inventor
Guenter Schwab
Diego Feijoo
Thomas Buschhardt
Hans-Joachim Luthe
Franz Sollinger
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG162684A1 publication Critical patent/SG162684A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG200908212-4A 2008-12-10 2009-12-10 Method for the treatment of a semiconductor wafer SG162684A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008061521A DE102008061521B4 (de) 2008-12-10 2008-12-10 Verfahren zur Behandlung einer Halbleiterscheibe

Publications (1)

Publication Number Publication Date
SG162684A1 true SG162684A1 (en) 2010-07-29

Family

ID=42168519

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200908212-4A SG162684A1 (en) 2008-12-10 2009-12-10 Method for the treatment of a semiconductor wafer

Country Status (7)

Country Link
US (2) US8372213B2 (zh)
JP (1) JP5036795B2 (zh)
KR (1) KR101124024B1 (zh)
CN (1) CN101752215B (zh)
DE (1) DE102008061521B4 (zh)
SG (1) SG162684A1 (zh)
TW (1) TWI409864B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105336645B (zh) * 2014-08-14 2021-04-30 无锡华瑛微电子技术有限公司 利用含臭氧的流体处理半导体晶片表面的装置及方法
JP6894264B2 (ja) * 2016-03-25 2021-06-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714203A (en) * 1995-08-23 1998-02-03 Ictop Entwicklungs Gmbh Procedure for the drying of silicon
ATE288622T1 (de) * 1996-06-24 2005-02-15 Imec Inter Uni Micro Electr Vorrichtung und verfahren zur nassreinigung oder zum ätzen eines flachen substrats
EP0817246B1 (en) 1996-06-24 2005-02-02 Interuniversitair Microelektronica Centrum Vzw Apparatus and method for wet cleaning or etching of flat substrates
JP3171807B2 (ja) * 1997-01-24 2001-06-04 東京エレクトロン株式会社 洗浄装置及び洗浄方法
EP0993023A1 (en) * 1998-10-05 2000-04-12 Agfa-Gevaert N.V. Method for transferring a web-or sheet-like material into a clean room
EP1054457B1 (en) * 1999-05-20 2010-08-04 Kaneka Corporation Method and apparatus for manufacturing a semiconductor device
JP2001176833A (ja) 1999-12-14 2001-06-29 Tokyo Electron Ltd 基板処理装置
EP1168422B1 (en) * 2000-06-27 2009-12-16 Imec Method and apparatus for liquid-treating and drying a substrate
JP2002252201A (ja) * 2001-02-26 2002-09-06 Dainippon Screen Mfg Co Ltd 基板処理装置
EP1408534B1 (en) * 2002-10-11 2007-02-07 S.O.I. Tec Silicon on Insulator Technologies S.A. A method and a device for producing an adhesive surface of a substrate
DE60218044T2 (de) * 2002-10-11 2007-06-06 S.O.I.Tec Silicon On Insulator Technologies S.A. Verfahren und Vorrichtung zur Herstellung einer haftenden Substratoberfläche
JP2007005665A (ja) * 2005-06-27 2007-01-11 Dainippon Screen Mfg Co Ltd 基板処理装置

Also Published As

Publication number Publication date
US8372213B2 (en) 2013-02-12
CN101752215B (zh) 2011-11-23
US8580046B2 (en) 2013-11-12
CN101752215A (zh) 2010-06-23
DE102008061521B4 (de) 2011-12-08
US20130068262A1 (en) 2013-03-21
TW201025432A (en) 2010-07-01
JP5036795B2 (ja) 2012-09-26
KR101124024B1 (ko) 2012-03-23
KR20100067041A (ko) 2010-06-18
DE102008061521A1 (de) 2010-06-17
JP2010141316A (ja) 2010-06-24
US20100139706A1 (en) 2010-06-10
TWI409864B (zh) 2013-09-21

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