SG160275A1 - Device for pulling a single crystal - Google Patents

Device for pulling a single crystal

Info

Publication number
SG160275A1
SG160275A1 SG200905442-0A SG2009054420A SG160275A1 SG 160275 A1 SG160275 A1 SG 160275A1 SG 2009054420 A SG2009054420 A SG 2009054420A SG 160275 A1 SG160275 A1 SG 160275A1
Authority
SG
Singapore
Prior art keywords
single crystal
pulling
cable
bearing
gripping catches
Prior art date
Application number
SG200905442-0A
Other languages
English (en)
Inventor
Andreas Muehe
Alfred Miller
Johann-Andreas Huber
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG160275A1 publication Critical patent/SG160275A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG200905442-0A 2008-09-17 2009-08-14 Device for pulling a single crystal SG160275A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008047599A DE102008047599B4 (de) 2008-09-17 2008-09-17 Vorrichtung und Verfahren zum Ziehen eines Einkristalls

Publications (1)

Publication Number Publication Date
SG160275A1 true SG160275A1 (en) 2010-04-29

Family

ID=41794820

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012009882A SG178782A1 (en) 2008-09-17 2009-08-14 Device for pulling a single crystal
SG200905442-0A SG160275A1 (en) 2008-09-17 2009-08-14 Device for pulling a single crystal

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2012009882A SG178782A1 (en) 2008-09-17 2009-08-14 Device for pulling a single crystal

Country Status (7)

Country Link
US (1) US8470093B2 (de)
JP (1) JP5005747B2 (de)
KR (1) KR101130011B1 (de)
CN (1) CN101676440B (de)
DE (1) DE102008047599B4 (de)
SG (2) SG178782A1 (de)
TW (1) TWI404837B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102134739A (zh) * 2011-03-08 2011-07-27 宁夏日晶新能源装备股份有限公司 单晶炉自动引晶系统及方法
US11255024B2 (en) * 2019-06-18 2022-02-22 Linton Crystal Technologies Corp. Seed lifting and rotating system for use in crystal growth
CN112513344A (zh) 2019-08-21 2021-03-16 眉山博雅新材料有限公司 上提拉开放式单晶炉
KR102270393B1 (ko) * 2019-10-22 2021-06-30 에스케이실트론 주식회사 원료 공급 유닛, 이를 포함하는 실리콘 단결정 잉곳의 성장 장치 및 원료 공급 방법
DE102020100331A1 (de) * 2020-01-09 2021-07-15 Pva Tepla Ag Kristallunterstützung und Kristallziehanlage mit einer solchen Kristallunterstützung
US11891721B2 (en) 2020-12-09 2024-02-06 Linton Kayex Technology Co., Ltd Spool-balanced seed lift

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69112463T2 (de) * 1990-03-30 1996-02-15 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.
JP3402040B2 (ja) 1995-12-27 2003-04-28 信越半導体株式会社 単結晶保持装置
JP3528448B2 (ja) * 1996-07-23 2004-05-17 信越半導体株式会社 単結晶の引上げ方法及び装置
KR19980079891A (ko) * 1997-03-27 1998-11-25 모리 레이자로 단결정 성장장치 및 단결정 성장방법
JP4068711B2 (ja) * 1998-02-02 2008-03-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置
JP4026694B2 (ja) * 1998-02-18 2007-12-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶保持装置
JP4052753B2 (ja) * 1999-02-24 2008-02-27 株式会社スーパーシリコン研究所 単結晶成長装置及び単結晶成長方法
JP2000281487A (ja) * 1999-03-31 2000-10-10 Super Silicon Kenkyusho:Kk 単結晶引き上げ装置及び単結晶引き上げ方法
DE19933771B4 (de) * 1999-07-19 2007-12-06 Liebherr-Werk Nenzing Gmbh, Nenzing Kran
DE19939715B4 (de) * 1999-08-21 2008-07-24 Crystal Growing Systems Gmbh Auf einer Ziehwelle einer Kristallziehanlage angeordneter Greifer
JP4689027B2 (ja) * 2000-10-23 2011-05-25 株式会社Ｓｕｍｃｏ 半導体単結晶引上装置
JP2005029449A (ja) * 2003-07-10 2005-02-03 Siltronic Japan Corp シリコン単結晶の製造装置
JP4662362B2 (ja) * 2006-02-14 2011-03-30 コバレントマテリアル株式会社 単結晶引上装置
DE102006034433B4 (de) * 2006-07-26 2018-03-22 Crystal Growing Systems Gmbh Kristallziehanlage, Unterstützungsvorrichtung und Verfahren zur Her-stellung von schweren Kristallen

Also Published As

Publication number Publication date
DE102008047599A1 (de) 2010-04-08
DE102008047599B4 (de) 2012-12-20
US20100064965A1 (en) 2010-03-18
SG178782A1 (en) 2012-03-29
JP5005747B2 (ja) 2012-08-22
CN101676440A (zh) 2010-03-24
JP2010077018A (ja) 2010-04-08
TW201012985A (en) 2010-04-01
KR20100032302A (ko) 2010-03-25
US8470093B2 (en) 2013-06-25
KR101130011B1 (ko) 2012-04-12
TWI404837B (zh) 2013-08-11
CN101676440B (zh) 2012-12-19

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