SG152158A1 - Method for cleaning silicon wafer - Google Patents
Method for cleaning silicon waferInfo
- Publication number
- SG152158A1 SG152158A1 SG200807523-6A SG2008075236A SG152158A1 SG 152158 A1 SG152158 A1 SG 152158A1 SG 2008075236 A SG2008075236 A SG 2008075236A SG 152158 A1 SG152158 A1 SG 152158A1
- Authority
- SG
- Singapore
- Prior art keywords
- silicon wafer
- cleaning
- deionized water
- rinsing
- rinsed
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 9
- 229910052710 silicon Inorganic materials 0.000 title abstract 9
- 239000010703 silicon Substances 0.000 title abstract 9
- 238000004140 cleaning Methods 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 4
- 239000008367 deionised water Substances 0.000 abstract 3
- 229910021641 deionized water Inorganic materials 0.000 abstract 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070101900A KR100931196B1 (ko) | 2007-10-10 | 2007-10-10 | 실리콘 웨이퍼 세정 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG152158A1 true SG152158A1 (en) | 2009-05-29 |
Family
ID=40139251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200807523-6A SG152158A1 (en) | 2007-10-10 | 2008-10-06 | Method for cleaning silicon wafer |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20090095321A1 (ja) |
| EP (1) | EP2048702A3 (ja) |
| JP (1) | JP2009094509A (ja) |
| KR (1) | KR100931196B1 (ja) |
| SG (1) | SG152158A1 (ja) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008056455B3 (de) * | 2008-11-07 | 2010-04-29 | Centrotherm Photovoltaics Technology Gmbh | Oxidations- und Reinigungsverfahren für Siliziumscheiben |
| KR101033650B1 (ko) * | 2010-06-28 | 2011-05-12 | 윤병호 | 도막의 박리 방법 |
| US8283259B2 (en) | 2010-08-31 | 2012-10-09 | Micron Technology, Inc. | Methods of removing a metal nitride material |
| WO2014182418A1 (en) * | 2013-05-08 | 2014-11-13 | Tel Fsi, Inc. | Process comprising water vapor for haze elimination and residue removal |
| JP6028754B2 (ja) * | 2014-03-11 | 2016-11-16 | トヨタ自動車株式会社 | ＳｉＣ単結晶基板の製造方法 |
| KR101778368B1 (ko) | 2015-08-12 | 2017-09-14 | 에스케이실트론 주식회사 | 웨이퍼의 세정 방법 |
| EP3139416B1 (en) * | 2015-09-07 | 2020-10-28 | IMEC vzw | Texturing monocrystalline silicon substrates |
| CN106910674B (zh) * | 2017-03-02 | 2019-05-24 | 东莞市天域半导体科技有限公司 | 一种去除SiC外延晶片金属污染或残留的清洗方法 |
| JP6729632B2 (ja) * | 2018-05-29 | 2020-07-22 | 信越半導体株式会社 | シリコンウェーハの洗浄方法 |
| CN110484971A (zh) * | 2019-07-02 | 2019-11-22 | 苏州中世太新能源科技有限公司 | 一种太阳电池硅片表面臭氧处理工艺及处理设备 |
| CN110473810A (zh) * | 2019-08-21 | 2019-11-19 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 单晶硅制绒工艺及装置 |
| KR102236398B1 (ko) | 2020-09-22 | 2021-04-02 | 에스케이씨 주식회사 | 웨이퍼의 세정방법 및 불순물이 저감된 웨이퍼 |
| CN113894112B (zh) * | 2021-09-14 | 2023-05-30 | 先导薄膜材料有限公司 | 一种铟箔片表面处理方法 |
| CN115488095B (zh) * | 2022-08-11 | 2024-06-18 | 复旦大学 | 一种硅片用臭氧清洗方法及装置 |
| CN115921340A (zh) * | 2022-12-15 | 2023-04-07 | 西安奕斯伟材料科技有限公司 | 硅片分选设备 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100433A (ja) * | 1981-12-10 | 1983-06-15 | Fujitsu Ltd | ウエハ洗浄方法 |
| JPH05341168A (ja) | 1992-06-12 | 1993-12-24 | Canon Inc | レンズ駆動装置を有する光学機器 |
| US5911837A (en) * | 1993-07-16 | 1999-06-15 | Legacy Systems, Inc. | Process for treatment of semiconductor wafers in a fluid |
| CN1163946C (zh) * | 1996-08-20 | 2004-08-25 | 奥加诺株式会社 | 清洗电子元件或其制造设备的元件的方法和装置 |
| US6240933B1 (en) * | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| KR19990000441A (ko) * | 1997-06-05 | 1999-01-15 | 문정환 | 반도체 소자의 세정 방법 |
| US6230720B1 (en) * | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
| JP3957264B2 (ja) * | 2001-12-04 | 2007-08-15 | シルトロニック・ジャパン株式会社 | 半導体基板の洗浄方法 |
| US20040094187A1 (en) * | 2002-11-15 | 2004-05-20 | Lee Yong Ho | Apparatus and method for holding a semiconductor wafer using centrifugal force |
| US7071077B2 (en) * | 2003-03-26 | 2006-07-04 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Method for preparing a bonding surface of a semiconductor layer of a wafer |
| FR2864457B1 (fr) * | 2003-12-31 | 2006-12-08 | Commissariat Energie Atomique | Procede de nettoyage par voie humide d'une surface notamment en un materiau de type silicium germanium. |
-
2007
- 2007-10-10 KR KR1020070101900A patent/KR100931196B1/ko active IP Right Grant
-
2008
- 2008-09-30 EP EP08017200A patent/EP2048702A3/en not_active Withdrawn
- 2008-10-02 US US12/244,330 patent/US20090095321A1/en not_active Abandoned
- 2008-10-03 JP JP2008258550A patent/JP2009094509A/ja not_active Withdrawn
- 2008-10-06 SG SG200807523-6A patent/SG152158A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2048702A3 (en) | 2009-11-11 |
| US20090095321A1 (en) | 2009-04-16 |
| KR20090036715A (ko) | 2009-04-15 |
| KR100931196B1 (ko) | 2009-12-10 |
| JP2009094509A (ja) | 2009-04-30 |
| EP2048702A2 (en) | 2009-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG152158A1 (en) | Method for cleaning silicon wafer | |
| US7632357B2 (en) | Silicon wafer cleaning method | |
| TW200514845A (en) | Process solutions containing surfactants used as post-chemical mechanical planarization treatment | |
| CN104377119B (zh) | 一种锗单晶抛光片的清洗方法 | |
| JP2013541212A5 (ja) | ||
| JP2007526653A5 (ja) | ||
| TW200717628A (en) | Wafer edge cleaning process | |
| WO2005081289A3 (en) | Process and apparatus for removing residues from semiconductor substrates | |
| TW200940706A (en) | Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions | |
| TWI596668B (zh) | 一種半導體晶圓的拋光方法 | |
| CN105914137B (zh) | 一种湿法硅片清洗方法 | |
| TW200517795A (en) | Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing | |
| WO2012172724A1 (ja) | 半導体ウェーハの洗浄方法 | |
| WO2010068753A3 (en) | Immersive oxidation and etching process for cleaning silicon electrodes | |
| CN105280477A (zh) | 一种蓝宝石晶片的清洗工艺 | |
| JP5533624B2 (ja) | 半導体ウェーハの洗浄方法 | |
| TW200623254A (en) | Method for producing epitaxial silicon wafer | |
| CN105810563A (zh) | 一种太阳能电池硅片的清洗方法 | |
| TW200721297A (en) | Method for cleaning a semiconductor structure and chemistry thereof | |
| JP2019207923A5 (ja) | ||
| TWI233168B (en) | Method of cleaning surface of wafer by hydroxyl radical of deionized water | |
| JP4857738B2 (ja) | 半導体ウエーハの洗浄方法および製造方法 | |
| CN106252201A (zh) | 一种硅片的水清洗方法和系统 | |
| TW200733209A (en) | Method for suppressing oxide growth while performing wet cleaning sequence on semiconductor device on semiconductor substrate | |
| JP5463740B2 (ja) | 研磨した石英ガラス基板の洗浄方法 |