SG151294G - Magnetoresistive sensor with improved antiferromagnetic film - Google Patents
Magnetoresistive sensor with improved antiferromagnetic filmInfo
- Publication number
- SG151294G SG151294G SG151294A SG151294A SG151294G SG 151294 G SG151294 G SG 151294G SG 151294 A SG151294 A SG 151294A SG 151294 A SG151294 A SG 151294A SG 151294 G SG151294 G SG 151294G
- Authority
- SG
- Singapore
- Prior art keywords
- magnetoresistive sensor
- antiferromagnetic film
- improved
- improved antiferromagnetic
- film
- Prior art date
Links
- 230000005290 antiferromagnetic effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/399—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures with intrinsic biasing, e.g. provided by equipotential strips
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/043,675 US4755897A (en) | 1987-04-28 | 1987-04-28 | Magnetoresistive sensor with improved antiferromagnetic film |
JP63062109A JPH0636443B2 (ja) | 1987-04-28 | 1988-03-17 | 磁気抵抗センサ |
EP88105079A EP0288766B1 (fr) | 1987-04-28 | 1988-03-29 | Capteur magnétorésistif à film antiferromagnétique |
DE88105079T DE3883831T2 (de) | 1987-04-28 | 1988-03-29 | Magnetoresistiver Sensor mit antiferromagnetischem Film. |
SG151294A SG151294G (en) | 1987-04-28 | 1994-10-17 | Magnetoresistive sensor with improved antiferromagnetic film |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/043,675 US4755897A (en) | 1987-04-28 | 1987-04-28 | Magnetoresistive sensor with improved antiferromagnetic film |
SG151294A SG151294G (en) | 1987-04-28 | 1994-10-17 | Magnetoresistive sensor with improved antiferromagnetic film |
Publications (1)
Publication Number | Publication Date |
---|---|
SG151294G true SG151294G (en) | 1995-03-17 |
Family
ID=26664440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG151294A SG151294G (en) | 1987-04-28 | 1994-10-17 | Magnetoresistive sensor with improved antiferromagnetic film |
Country Status (5)
Country | Link |
---|---|
US (1) | US4755897A (fr) |
EP (1) | EP0288766B1 (fr) |
JP (1) | JPH0636443B2 (fr) |
DE (1) | DE3883831T2 (fr) |
SG (1) | SG151294G (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4879619A (en) * | 1988-03-28 | 1989-11-07 | International Business Machines Corporation | Magnetoresistive read transducer |
US4940511A (en) * | 1988-03-28 | 1990-07-10 | International Business Machines Corporation | Method for making a magnetoresistive read transducer |
DE3820475C1 (fr) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
US4903158A (en) * | 1988-07-28 | 1990-02-20 | Eastman Kodak Company | MR head with complementary easy axis permanent magnet |
FR2648942B1 (fr) * | 1989-06-27 | 1995-08-11 | Thomson Csf | Capteur a effet magnetoresistif |
US5014147A (en) * | 1989-10-31 | 1991-05-07 | International Business Machines Corporation | Magnetoresistive sensor with improved antiferromagnetic film |
US5287237A (en) * | 1990-03-16 | 1994-02-15 | Hitachi, Ltd. | Antiferromagnetic film superior in corrosion resistance, magnetoresistance-effect element and magnetoresistance-effect head including such thin film |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
MY108176A (en) * | 1991-02-08 | 1996-08-30 | Hitachi Global Storage Tech Netherlands B V | Magnetoresistive sensor based on oscillations in the magnetoresistance |
US5192618A (en) * | 1991-04-26 | 1993-03-09 | International Business Machines Corporation | Corrosion protection by femn by ion implantation |
US5315468A (en) * | 1992-07-28 | 1994-05-24 | International Business Machines Corporation | Magnetoresistive sensor having antiferromagnetic layer for exchange bias |
US5475550A (en) * | 1992-08-25 | 1995-12-12 | Seagate Technology, Inc. | Enhanced cross-talk suppression in magnetoresistive sensors |
JP2725977B2 (ja) * | 1992-08-28 | 1998-03-11 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ及びその製造方法、磁気記憶システム |
US5780176A (en) | 1992-10-30 | 1998-07-14 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5552949A (en) * | 1993-03-03 | 1996-09-03 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element with improved antiferromagnetic layer |
US5440233A (en) * | 1993-04-30 | 1995-08-08 | International Business Machines Corporation | Atomic layered materials and temperature control for giant magnetoresistive sensor |
JP2784457B2 (ja) * | 1993-06-11 | 1998-08-06 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ装置 |
US5428491A (en) * | 1993-12-03 | 1995-06-27 | Eastman Kodak Company | Magnetoresistive head with deposited biasing magnet |
JPH07202294A (ja) * | 1993-12-28 | 1995-08-04 | Nec Corp | 磁気抵抗効果素子 |
US5666247A (en) * | 1994-02-04 | 1997-09-09 | Seagate Technology, Inc. | No-field, low power FeMn deposition giving high exchange films |
EP0685746A3 (fr) * | 1994-05-30 | 1996-12-04 | Sony Corp | Dispositif à effet magnétorésistant ayant une résistance thermique améliorée. |
JPH0845029A (ja) * | 1994-08-01 | 1996-02-16 | Alps Electric Co Ltd | 薄膜磁気ヘッド |
DE69522304T2 (de) | 1994-12-13 | 2002-04-25 | Kabushiki Kaisha Toshiba, Kawasaki | Film mit Austauschkopplung und magnetoresistives Element |
KR100234172B1 (ko) * | 1995-01-27 | 1999-12-15 | 이형도 | 박막 자기헤드의 자기 저항소자 |
US5764445A (en) * | 1995-06-02 | 1998-06-09 | Applied Magnetics Corporation | Exchange biased magnetoresistive transducer |
US6007643A (en) * | 1995-07-12 | 1999-12-28 | Fujitsu Limited | Method of manufacturing magnetoresistive head |
JPH0981915A (ja) * | 1995-07-12 | 1997-03-28 | Fujitsu Ltd | 磁気抵抗効果素子及び磁気記録装置 |
JP3274318B2 (ja) * | 1995-07-19 | 2002-04-15 | アルプス電気株式会社 | 薄膜磁気ヘッド |
JP3635504B2 (ja) * | 1995-08-31 | 2005-04-06 | 富士通株式会社 | 磁気抵抗効果ヘッドとその製造方法及び磁気記録装置 |
US6055135A (en) * | 1996-03-25 | 2000-04-25 | Alps Electric Co., Ltd. | Exchange coupling thin film and magnetoresistive element comprising the same |
JP3367334B2 (ja) * | 1996-05-20 | 2003-01-14 | 株式会社日立製作所 | 磁気ヘッド及びそれを用いた磁気ディスク装置 |
US6090498A (en) * | 1996-12-27 | 2000-07-18 | Tdk Corporation | Magnetoresistance effect element and magnetoresistance device |
US6600637B1 (en) * | 1999-10-28 | 2003-07-29 | Seagate Technology, L.L.C. | Edge barrier to prevent spin valve sensor corrosion and improve long term reliability |
US6512382B1 (en) | 2001-07-17 | 2003-01-28 | International Business Machines Corporation | Method for corrosion susceptibility testing of magnetic heads using simulated disk corrosion products |
WO2005088655A1 (fr) * | 2004-03-12 | 2005-09-22 | The Provost Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin | Milieu magnetoresistant |
US7727434B2 (en) * | 2005-08-16 | 2010-06-01 | General Electric Company | Membranes and methods of treating membranes |
US8755152B1 (en) | 2008-09-24 | 2014-06-17 | Western Digital (Fremont), Llc | Method and system for providing an improved sensor stack for a recording head |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3840898A (en) * | 1972-12-29 | 1974-10-08 | Ibm | Self-biased magnetoresistive sensor |
US3887944A (en) * | 1973-06-29 | 1975-06-03 | Ibm | Method for eliminating part of magnetic crosstalk in magnetoresistive sensors |
DE2365179C2 (de) * | 1973-12-29 | 1985-12-19 | Basf Ag, 6700 Ludwigshafen | Verfahren zur Herstellung von magnetischen Teilchen mit Austausch-Anisotropie und deren Verwendung |
JPS6035421B2 (ja) * | 1976-04-03 | 1985-08-14 | 東北大学金属材料研究所長 | 反強磁性(不感磁性)クロム基インバ−合金およびその製造方法 |
US4103315A (en) * | 1977-06-24 | 1978-07-25 | International Business Machines Corporation | Antiferromagnetic-ferromagnetic exchange bias films |
US4663685A (en) * | 1985-08-15 | 1987-05-05 | International Business Machines | Magnetoresistive read transducer having patterned longitudinal bias |
-
1987
- 1987-04-28 US US07/043,675 patent/US4755897A/en not_active Expired - Fee Related
-
1988
- 1988-03-17 JP JP63062109A patent/JPH0636443B2/ja not_active Expired - Lifetime
- 1988-03-29 EP EP88105079A patent/EP0288766B1/fr not_active Expired - Lifetime
- 1988-03-29 DE DE88105079T patent/DE3883831T2/de not_active Expired - Fee Related
-
1994
- 1994-10-17 SG SG151294A patent/SG151294G/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP0288766B1 (fr) | 1993-09-08 |
DE3883831T2 (de) | 1994-04-14 |
JPH0636443B2 (ja) | 1994-05-11 |
US4755897A (en) | 1988-07-05 |
EP0288766A2 (fr) | 1988-11-02 |
EP0288766A3 (en) | 1990-12-05 |
JPS63273372A (ja) | 1988-11-10 |
DE3883831D1 (de) | 1993-10-14 |
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