SG145567A1 - Plating method - Google Patents

Plating method

Info

Publication number
SG145567A1
SG145567A1 SG200607065-0A SG2006070650A SG145567A1 SG 145567 A1 SG145567 A1 SG 145567A1 SG 2006070650 A SG2006070650 A SG 2006070650A SG 145567 A1 SG145567 A1 SG 145567A1
Authority
SG
Singapore
Prior art keywords
plating method
photoresist
depositing
coating process
chip scale
Prior art date
Application number
SG200607065-0A
Other languages
English (en)
Inventor
Robert S Forman
Jill E Steeper
Eric C Huenger
Original Assignee
Shipley Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Llc filed Critical Shipley Co Llc
Publication of SG145567A1 publication Critical patent/SG145567A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
SG200607065-0A 2002-04-11 2003-04-11 Plating method SG145567A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37187302P 2002-04-11 2002-04-11

Publications (1)

Publication Number Publication Date
SG145567A1 true SG145567A1 (en) 2008-09-29

Family

ID=28454879

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200607065-0A SG145567A1 (en) 2002-04-11 2003-04-11 Plating method
SG200302067A SG111989A1 (en) 2002-04-11 2003-04-11 Plating method

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200302067A SG111989A1 (en) 2002-04-11 2003-04-11 Plating method

Country Status (7)

Country Link
US (1) US7344970B2 (https=)
EP (1) EP1353228B1 (https=)
JP (1) JP4224851B2 (https=)
KR (1) KR100943677B1 (https=)
CN (1) CN100343758C (https=)
SG (2) SG145567A1 (https=)
TW (1) TWI236049B (https=)

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JP4699140B2 (ja) * 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
EP1783548B1 (en) * 2005-11-08 2017-03-08 Rohm and Haas Electronic Materials LLC Method of forming a patterned layer on a substrate
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
JP6133056B2 (ja) * 2012-12-27 2017-05-24 ローム・アンド・ハース電子材料株式会社 スズまたはスズ合金めっき液
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
JP6059071B2 (ja) * 2013-04-23 2017-01-11 東京応化工業株式会社 被膜形成方法
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US10568483B2 (en) * 2014-12-12 2020-02-25 Irobot Corporation Cleaning system for autonomous robot
KR101598826B1 (ko) * 2015-08-28 2016-03-03 영창케미칼 주식회사 에칭 내성이 우수한 i-선용 네가티브형 포토레지스트 조성물
KR101757543B1 (ko) 2015-09-07 2017-07-13 오병서 천장등 고정방법 및 그 구조
CN110760896A (zh) * 2018-07-26 2020-02-07 苏州苏大维格科技集团股份有限公司 一种工作版的防皱电铸工艺
US12353129B2 (en) * 2021-12-27 2025-07-08 Nanya Technology Corporation Method for preparing semiconductor device structure including bevel etching process

Citations (4)

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Publication number Priority date Publication date Assignee Title
EP0855620A1 (en) * 1997-01-27 1998-07-29 JSR Corporation Positive photoresist composition
US5965328A (en) * 1995-05-10 1999-10-12 Jsr Corporation Radiation sensitive resin composition and material for forming bumps containing the same
US6110643A (en) * 1992-05-15 2000-08-29 Morton International Inc Method of forming a multilayer printed circuit board and product thereof
EP1148548A2 (en) * 2000-04-19 2001-10-24 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections

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EP0088050B1 (de) 1982-02-26 1986-09-03 Ciba-Geigy Ag Photohärtbare gefärbte Massen
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EP0490118A1 (en) * 1990-12-10 1992-06-17 Shipley Company Inc. Photoimagable solder mask and photosensitive composition
US5202222A (en) 1991-03-01 1993-04-13 Shipley Company Inc. Selective and precise etching and plating of conductive substrates
CA2076727A1 (en) 1991-08-30 1993-03-01 Richard T. Mayes Alkaline-etch resistant dry film photoresist
US5186383A (en) 1991-10-02 1993-02-16 Motorola, Inc. Method for forming solder bump interconnections to a solder-plated circuit trace
AU1556297A (en) 1996-01-30 1997-08-22 Naganoken Aqueous solution for forming metal complexes, tin-silver alloy plating bath, and process for producing plated object using the plating bath
US6099713A (en) 1996-11-25 2000-08-08 C. Uyemura & Co., Ltd. Tin-silver alloy electroplating bath and tin-silver alloy electroplating process
KR100219806B1 (ko) 1997-05-27 1999-09-01 윤종용 반도체장치의 플립 칩 실장형 솔더 범프의 제조방법, 이에 따라 제조되는 솔더범프 및 그 분석방법
US5990564A (en) 1997-05-30 1999-11-23 Lucent Technologies Inc. Flip chip packaging of memory chips
KR100585071B1 (ko) 1999-09-13 2006-06-01 삼성전자주식회사 스핀 코팅을 이용한 포토레지스트막의 도포 방법
JP3503639B2 (ja) 2000-09-27 2004-03-08 日立化成工業株式会社 レジストパターン、その製造法およびその利用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110643A (en) * 1992-05-15 2000-08-29 Morton International Inc Method of forming a multilayer printed circuit board and product thereof
US5965328A (en) * 1995-05-10 1999-10-12 Jsr Corporation Radiation sensitive resin composition and material for forming bumps containing the same
EP0855620A1 (en) * 1997-01-27 1998-07-29 JSR Corporation Positive photoresist composition
EP1148548A2 (en) * 2000-04-19 2001-10-24 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections

Also Published As

Publication number Publication date
TWI236049B (en) 2005-07-11
US7344970B2 (en) 2008-03-18
TW200403714A (en) 2004-03-01
SG111989A1 (en) 2005-06-29
EP1353228B1 (en) 2015-01-28
JP2004126508A (ja) 2004-04-22
EP1353228A1 (en) 2003-10-15
JP4224851B2 (ja) 2009-02-18
CN100343758C (zh) 2007-10-17
CN1456711A (zh) 2003-11-19
KR100943677B1 (ko) 2010-02-22
HK1059458A1 (en) 2004-07-02
US20040018724A1 (en) 2004-01-29
KR20040002487A (ko) 2004-01-07

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