SG144790A1 - Method and apparatus for calibrating sub-nanometer critical dimension using pitch offset - Google Patents

Method and apparatus for calibrating sub-nanometer critical dimension using pitch offset

Info

Publication number
SG144790A1
SG144790A1 SG200705753-2A SG2007057532A SG144790A1 SG 144790 A1 SG144790 A1 SG 144790A1 SG 2007057532 A SG2007057532 A SG 2007057532A SG 144790 A1 SG144790 A1 SG 144790A1
Authority
SG
Singapore
Prior art keywords
pitch
critical dimension
measured
calibrating
pitch offset
Prior art date
Application number
SG200705753-2A
Other languages
English (en)
Inventor
Chih-Ming Ke
Shinn-Sheng Yu
Yu-Hsi Wang
Jacky Huang Te-Chih Huang
Tsai-Sheng Gau
Kuo-Chen Huang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG144790A1 publication Critical patent/SG144790A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG200705753-2A 2007-01-23 2007-08-07 Method and apparatus for calibrating sub-nanometer critical dimension using pitch offset SG144790A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/625,997 US7777884B2 (en) 2007-01-23 2007-01-23 Method and system for optimizing sub-nanometer critical dimension using pitch offset

Publications (1)

Publication Number Publication Date
SG144790A1 true SG144790A1 (en) 2008-08-28

Family

ID=39640863

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200705753-2A SG144790A1 (en) 2007-01-23 2007-08-07 Method and apparatus for calibrating sub-nanometer critical dimension using pitch offset

Country Status (4)

Country Link
US (1) US7777884B2 (ko)
KR (1) KR100891696B1 (ko)
CN (1) CN101241309B (ko)
SG (1) SG144790A1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102538723B (zh) * 2010-12-08 2016-03-02 无锡华润上华科技有限公司 光刻线宽测试校准方法
CN103591911B (zh) * 2012-08-13 2016-08-10 中芯国际集成电路制造(上海)有限公司 Cdsem校准方法
CN103713471B (zh) * 2012-10-08 2016-03-09 合肥京东方光电科技有限公司 一种关键尺寸测试的校正装置和方法
CN104423145B (zh) * 2013-09-02 2019-02-22 北大方正集团有限公司 掩膜版及显微镜读取关键尺寸的方法
KR102467186B1 (ko) * 2014-03-10 2022-11-14 노바 엘티디. 패턴화된 구조물에서 측정을 위한 테스트 구조물을 사용하는 테스트 구조물 및 계측 기술
CN109444472A (zh) * 2018-12-19 2019-03-08 中国电子科技集团公司第十三研究所 扫描电子显微镜校准图形样片及制备方法
CN112729108B (zh) * 2020-12-18 2022-12-06 长江存储科技有限责任公司 一种光学关键尺寸ocd测量设备的校准方法

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US5452077A (en) * 1993-12-09 1995-09-19 Hughes Aircraft Company Transient-free method of determining satellite attitude
US5805290A (en) * 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
KR100194026B1 (ko) * 1996-05-27 1999-06-15 윤종용 트랙폭 측정 방법
US6301008B1 (en) * 1997-03-27 2001-10-09 Philips Semiconductor, Inc. Arrangement and method for calibrating optical line shortening measurements
US5965309A (en) * 1997-08-28 1999-10-12 International Business Machines Corporation Focus or exposure dose parameter control system using tone reversing patterns
JP3344403B2 (ja) * 2000-03-03 2002-11-11 日本電気株式会社 光学収差の測定用マスク及び光学収差の測定方法
US6570157B1 (en) * 2000-06-09 2003-05-27 Advanced Micro Devices, Inc. Multi-pitch and line calibration for mask and wafer CD-SEM system
US6459480B1 (en) * 2000-09-14 2002-10-01 Advanced Micro Devices, Inc. Measurement method of Zernike coma aberration coefficient
US6753963B1 (en) * 2000-10-26 2004-06-22 General Phosphorix Method of calibration of magnification of optical devices
US6958819B1 (en) * 2002-04-04 2005-10-25 Nanometrics Incorporated Encoder with an alignment target
US6982793B1 (en) * 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
KR100498578B1 (ko) * 2002-12-31 2005-07-01 동부아남반도체 주식회사 반도체 장치의 오버레이 마크
KR100821096B1 (ko) * 2003-12-30 2008-04-08 동부일렉트로닉스 주식회사 표준 웨이퍼 및 그를 이용한 기준 선폭 설정 방법
JP4401814B2 (ja) * 2004-02-25 2010-01-20 株式会社日立ハイテクノロジーズ 測長用標準部材及び電子ビーム測長装置
JP2007139575A (ja) * 2005-11-18 2007-06-07 Hitachi High-Technologies Corp 測長校正用標準部材及びその作製方法及びこれを用いた校正方法及び装置

Also Published As

Publication number Publication date
KR20080069499A (ko) 2008-07-28
CN101241309B (zh) 2011-11-30
US7777884B2 (en) 2010-08-17
US20080174778A1 (en) 2008-07-24
KR100891696B1 (ko) 2009-04-03
CN101241309A (zh) 2008-08-13

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