TW200737295A - Method for detecting semiconductor manufacturing conditions - Google Patents

Method for detecting semiconductor manufacturing conditions

Info

Publication number
TW200737295A
TW200737295A TW095109327A TW95109327A TW200737295A TW 200737295 A TW200737295 A TW 200737295A TW 095109327 A TW095109327 A TW 095109327A TW 95109327 A TW95109327 A TW 95109327A TW 200737295 A TW200737295 A TW 200737295A
Authority
TW
Taiwan
Prior art keywords
manufacturing conditions
pattern areas
pitches
semiconductor manufacturing
detecting semiconductor
Prior art date
Application number
TW095109327A
Other languages
Chinese (zh)
Other versions
TWI294141B (en
Inventor
Wen-Zhan Zhou
Jin Yu
Kai-Hung Alex See
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW95109327A priority Critical patent/TWI294141B/en
Publication of TW200737295A publication Critical patent/TW200737295A/en
Application granted granted Critical
Publication of TWI294141B publication Critical patent/TWI294141B/en

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A method for detecting semiconductor-manufacturing conditions includes providing a photomask with a plurality of pattern areas each having a plurality of test lines with different pitches, exposing a plurality of wafer with the photomask in different manufacturing conditions, measuring the critical dimensions of the plurality of pattern areas, generating a library of relationships between the pitches and the critical dimension of the pattern areas, exposing a test wafer in an unknown manufacturing condition, finding out a relationships between the pitches and the critical dimension of the pattern areas of the test wafer, searching for a most similar relationship in the library, and detecting a set of manufacturing parameters used to expose the test wafer.
TW95109327A 2006-03-17 2006-03-17 Method for detecting semiconductor manufacturing conditions TWI294141B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95109327A TWI294141B (en) 2006-03-17 2006-03-17 Method for detecting semiconductor manufacturing conditions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95109327A TWI294141B (en) 2006-03-17 2006-03-17 Method for detecting semiconductor manufacturing conditions

Publications (2)

Publication Number Publication Date
TW200737295A true TW200737295A (en) 2007-10-01
TWI294141B TWI294141B (en) 2008-03-01

Family

ID=45068071

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95109327A TWI294141B (en) 2006-03-17 2006-03-17 Method for detecting semiconductor manufacturing conditions

Country Status (1)

Country Link
TW (1) TWI294141B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8830447B2 (en) 2009-05-12 2014-09-09 Asml Netherlands B.V. Inspection method for lithography
TWI488245B (en) * 2009-05-19 2015-06-11 United Microelectronics Corp Method for inspecting photoresist pattern
US9182682B2 (en) 2008-12-30 2015-11-10 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
CN112038249A (en) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 Method for detecting abnormal process of photoetching process
TWI750303B (en) * 2017-01-24 2021-12-21 美商蘭姆研究公司 Virtual metrology systems and methods for using feedforward critical dimension data to predict other critical dimensions of a wafer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201409012A (en) * 2012-08-20 2014-03-01 Fittech Co Ltd Inspection method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9182682B2 (en) 2008-12-30 2015-11-10 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US8830447B2 (en) 2009-05-12 2014-09-09 Asml Netherlands B.V. Inspection method for lithography
TWI553427B (en) * 2009-05-12 2016-10-11 Asml荷蘭公司 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
TWI488245B (en) * 2009-05-19 2015-06-11 United Microelectronics Corp Method for inspecting photoresist pattern
TWI750303B (en) * 2017-01-24 2021-12-21 美商蘭姆研究公司 Virtual metrology systems and methods for using feedforward critical dimension data to predict other critical dimensions of a wafer
CN112038249A (en) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 Method for detecting abnormal process of photoetching process

Also Published As

Publication number Publication date
TWI294141B (en) 2008-03-01

Similar Documents

Publication Publication Date Title
IL290018B (en) Monitoring fabrication of integrated circuits on semi-conductor wafer
TW200737295A (en) Method for detecting semiconductor manufacturing conditions
WO2011085255A3 (en) Inspection guided overlay metrology
TW200623303A (en) Probe card and the method for adignment and fabricating the same
WO2008036827A3 (en) Method for generating a design rule map having spatially varying overlay budget
TW200746259A (en) Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus
TW200737389A (en) Measuring a damaged structure formed on a wafer using optical metrology
TW200629359A (en) A novel wafer repair method using direct-writing
WO2010011560A3 (en) Improved metrology through use of feed forward feed sideways and measurement cell re-use
TW200625587A (en) Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
TW200739782A (en) Damage assessment of a wafer using optical metrology
WO2006073736A3 (en) Probe head arrays
ATE493669T1 (en) SEMICONDUCTOR COMPONENT WITH TEST STRUCTURE AND TEST METHOD FOR A SEMICONDUCTOR COMPONENT
JP2008129017A (en) Drift compensation of background of optical measuring instrument
SG130174A1 (en) Lithographic apparatus and device manufacturing method that compensates for reticle induced cdu
SG144790A1 (en) Method and apparatus for calibrating sub-nanometer critical dimension using pitch offset
TW200709316A (en) Substrate and testing method thereof
TW200641367A (en) Method and apparatus for verifying planarity in a probing system
TW200633106A (en) Method and apparatus for inspecting semiconductor wafer
CN101251712A (en) Mask territory verification method in semiconductor fabrication process
JP2004363304A5 (en)
TW200643582A (en) Inspection method, and manufacturing method for liquid crystal display using inspection method
WO2008096211A3 (en) Measurement of critical dimensions of semiconductor wafers
TW200801538A (en) Jig for substrate inspection and substrate inspection apparatus equipped with the same
Sorkhabi et al. Performance of measuring contact holes using the Opti-Probe 7341 3-D RT/CD technology