SG143201A1 - Polishing composition and polishing method - Google Patents
Polishing composition and polishing methodInfo
- Publication number
- SG143201A1 SG143201A1 SG200718000-3A SG2007180003A SG143201A1 SG 143201 A1 SG143201 A1 SG 143201A1 SG 2007180003 A SG2007180003 A SG 2007180003A SG 143201 A1 SG143201 A1 SG 143201A1
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- polishing composition
- composition
- polish
- ppm
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 10
- 238000000034 method Methods 0.000 title abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- -1 iron ions Chemical class 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 1
- 239000010452 phosphate Substances 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006318670A JP2008135453A (ja) | 2006-11-27 | 2006-11-27 | 研磨用組成物及び研磨方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG143201A1 true SG143201A1 (en) | 2008-06-27 |
Family
ID=39015976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200718000-3A SG143201A1 (en) | 2006-11-27 | 2007-11-22 | Polishing composition and polishing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080289261A1 (ko) |
EP (1) | EP1925648A3 (ko) |
JP (1) | JP2008135453A (ko) |
KR (1) | KR101427419B1 (ko) |
CN (1) | CN101220256A (ko) |
SG (1) | SG143201A1 (ko) |
TW (1) | TWI417372B (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8877643B2 (en) * | 2009-06-05 | 2014-11-04 | Sumco Corporation | Method of polishing a silicon wafer |
KR20140019403A (ko) * | 2011-03-30 | 2014-02-14 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 연마 방법 |
EP2833392B1 (en) | 2012-03-30 | 2017-07-05 | Nitta Haas Incorporated | Polishing composition |
JP6268069B2 (ja) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
JP2016069535A (ja) * | 2014-09-30 | 2016-05-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びその製造方法並びに研磨方法 |
US10541317B2 (en) * | 2018-03-01 | 2020-01-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming a metal gate using monolayers |
US11075113B2 (en) * | 2018-06-29 | 2021-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal capping layer and methods thereof |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
JP4202424B2 (ja) * | 1996-07-25 | 2008-12-24 | イーケイシー テクノロジー インコーポレイテッド | 化学機械研磨組成物及び化学機械研磨方法 |
US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6001269A (en) * | 1997-05-20 | 1999-12-14 | Rodel, Inc. | Method for polishing a composite comprising an insulator, a metal, and titanium |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
JP4264781B2 (ja) * | 1999-09-20 | 2009-05-20 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
US6319096B1 (en) * | 1999-11-15 | 2001-11-20 | Cabot Corporation | Composition and method for planarizing surfaces |
US6293848B1 (en) * | 1999-11-15 | 2001-09-25 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
US6299795B1 (en) * | 2000-01-18 | 2001-10-09 | Praxair S.T. Technology, Inc. | Polishing slurry |
US6355075B1 (en) * | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
JP4954398B2 (ja) * | 2001-08-09 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
JP2003142435A (ja) * | 2001-10-31 | 2003-05-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
EP1489650B1 (en) * | 2002-03-04 | 2010-07-14 | Fujimi Incorporated | Polishing composition and method for forming wiring structure |
JP4083528B2 (ja) * | 2002-10-01 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
JP2005268664A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
US8062548B2 (en) * | 2005-01-05 | 2011-11-22 | Nitta Haas Incorporated | Polishing slurry |
JP4405427B2 (ja) | 2005-05-10 | 2010-01-27 | 株式会社東芝 | スイッチング素子 |
-
2006
- 2006-11-27 JP JP2006318670A patent/JP2008135453A/ja active Pending
-
2007
- 2007-11-20 TW TW096143941A patent/TWI417372B/zh active
- 2007-11-22 SG SG200718000-3A patent/SG143201A1/en unknown
- 2007-11-26 KR KR1020070120613A patent/KR101427419B1/ko active IP Right Grant
- 2007-11-26 EP EP07254581A patent/EP1925648A3/en not_active Withdrawn
- 2007-11-26 US US11/944,981 patent/US20080289261A1/en not_active Abandoned
- 2007-11-27 CN CNA2007101934456A patent/CN101220256A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
TWI417372B (zh) | 2013-12-01 |
JP2008135453A (ja) | 2008-06-12 |
EP1925648A2 (en) | 2008-05-28 |
US20080289261A1 (en) | 2008-11-27 |
EP1925648A3 (en) | 2009-01-28 |
KR20080047989A (ko) | 2008-05-30 |
CN101220256A (zh) | 2008-07-16 |
TW200846453A (en) | 2008-12-01 |
KR101427419B1 (ko) | 2014-08-08 |
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