SG141318A1 - Silicon wafer having good intrinsic getterability and method for its production - Google Patents
Silicon wafer having good intrinsic getterability and method for its productionInfo
- Publication number
- SG141318A1 SG141318A1 SG200705969-4A SG2007059694A SG141318A1 SG 141318 A1 SG141318 A1 SG 141318A1 SG 2007059694 A SG2007059694 A SG 2007059694A SG 141318 A1 SG141318 A1 SG 141318A1
- Authority
- SG
- Singapore
- Prior art keywords
- silicon wafer
- bmd
- density
- production
- crystal lattice
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 11
- 229910052710 silicon Inorganic materials 0.000 title abstract 11
- 239000010703 silicon Substances 0.000 title abstract 11
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 10
- 239000013078 crystal Substances 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24298—Noncircular aperture [e.g., slit, diamond, rectangular, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006046956 | 2006-10-04 | ||
DE102007027111A DE102007027111B4 (de) | 2006-10-04 | 2007-06-13 | Siliciumscheibe mit guter intrinsischer Getterfähigkeit und Verfahren zu ihrer Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
SG141318A1 true SG141318A1 (en) | 2008-04-28 |
Family
ID=39154787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200705969-4A SG141318A1 (en) | 2006-10-04 | 2007-08-15 | Silicon wafer having good intrinsic getterability and method for its production |
Country Status (7)
Country | Link |
---|---|
US (1) | US7964275B2 (zh) |
JP (1) | JP4942606B2 (zh) |
KR (1) | KR100918287B1 (zh) |
CN (1) | CN101187059B (zh) |
DE (1) | DE102007027111B4 (zh) |
SG (1) | SG141318A1 (zh) |
TW (1) | TWI376435B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4805681B2 (ja) * | 2006-01-12 | 2011-11-02 | ジルトロニック アクチエンゲゼルシャフト | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 |
DE102007005346B4 (de) * | 2007-02-02 | 2015-09-17 | Siltronic Ag | Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung |
DE102010034002B4 (de) * | 2010-08-11 | 2013-02-21 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
US20130192303A1 (en) * | 2012-01-27 | 2013-08-01 | Memc | Qualitative crystal defect evaluation method |
US9499921B2 (en) | 2012-07-30 | 2016-11-22 | Rayton Solar Inc. | Float zone silicon wafer manufacturing system and related process |
CN102969395B (zh) * | 2012-10-31 | 2015-04-15 | 南昌大学 | 一种提高硅片抗碎裂性能的方法 |
US10141413B2 (en) | 2013-03-13 | 2018-11-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer strength by control of uniformity of edge bulk micro defects |
US9064823B2 (en) * | 2013-03-13 | 2015-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for qualifying a semiconductor wafer for subsequent processing |
JP6418085B2 (ja) * | 2015-07-03 | 2018-11-07 | 株式会社Sumco | シリコン単結晶の検査方法および製造方法 |
CN108691009B (zh) * | 2017-03-31 | 2021-10-08 | 环球晶圆股份有限公司 | 单晶硅的制造方法 |
CN109507559A (zh) * | 2017-09-15 | 2019-03-22 | 上海新昇半导体科技有限公司 | 一种硅片少子寿命的测试方法及测试装置 |
DE102019207433A1 (de) * | 2019-05-21 | 2020-11-26 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben |
US11695048B2 (en) | 2020-04-09 | 2023-07-04 | Sumco Corporation | Silicon wafer and manufacturing method of the same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2770091B2 (ja) * | 1991-11-22 | 1998-06-25 | コマツ電子金属株式会社 | シリコンウェハの処理方法 |
US5931662A (en) * | 1996-06-28 | 1999-08-03 | Sumitomo Sitix Corporation | Silicon single crystal wafer annealing method and equipment and silicon single crystal wafer and manufacturing method related thereto |
KR100237829B1 (ko) * | 1997-02-06 | 2000-01-15 | 윤종용 | 웨이퍼의 결함 분석방법 |
US6436846B1 (en) * | 1998-09-03 | 2002-08-20 | Siemens Aktiengesellscharft | Combined preanneal/oxidation step using rapid thermal processing |
US6663708B1 (en) * | 2000-09-22 | 2003-12-16 | Mitsubishi Materials Silicon Corporation | Silicon wafer, and manufacturing method and heat treatment method of the same |
JP4092946B2 (ja) * | 2002-05-09 | 2008-05-28 | 信越半導体株式会社 | シリコン単結晶ウエーハ及びエピタキシャルウエーハ並びにシリコン単結晶の製造方法 |
JP4699675B2 (ja) * | 2002-10-08 | 2011-06-15 | 信越半導体株式会社 | アニールウェーハの製造方法 |
JP4231275B2 (ja) * | 2002-11-14 | 2009-02-25 | Sumco Techxiv株式会社 | シリコンウェーハの製造方法およびその製造装置およびシリコンウェーハ |
JP4366956B2 (ja) * | 2003-02-19 | 2009-11-18 | 株式会社Sumco | 高品質ウェーハおよびその製造方法 |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
DE10339792B4 (de) * | 2003-03-27 | 2014-02-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
JP3781014B2 (ja) * | 2003-03-31 | 2006-05-31 | 株式会社Sumco | シリコンウェーハ熱処理治具およびシリコンウェーハ熱処理方法 |
DE10336271B4 (de) | 2003-08-07 | 2008-02-07 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
JP2005060168A (ja) * | 2003-08-12 | 2005-03-10 | Shin Etsu Handotai Co Ltd | ウエーハの製造方法 |
DE102005013831B4 (de) * | 2005-03-24 | 2008-10-16 | Siltronic Ag | Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe |
-
2007
- 2007-06-13 DE DE102007027111A patent/DE102007027111B4/de active Active
- 2007-08-15 SG SG200705969-4A patent/SG141318A1/en unknown
- 2007-09-25 CN CN200710153795XA patent/CN101187059B/zh active Active
- 2007-10-02 TW TW096136921A patent/TWI376435B/zh active
- 2007-10-02 US US11/906,447 patent/US7964275B2/en active Active
- 2007-10-04 JP JP2007261153A patent/JP4942606B2/ja active Active
- 2007-10-04 KR KR1020070099861A patent/KR100918287B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2008133171A (ja) | 2008-06-12 |
DE102007027111B4 (de) | 2011-12-08 |
TW200817541A (en) | 2008-04-16 |
CN101187059A (zh) | 2008-05-28 |
US7964275B2 (en) | 2011-06-21 |
KR100918287B1 (ko) | 2009-09-18 |
KR20080031651A (ko) | 2008-04-10 |
DE102007027111A1 (de) | 2008-04-10 |
US20080311342A1 (en) | 2008-12-18 |
TWI376435B (en) | 2012-11-11 |
CN101187059B (zh) | 2011-04-27 |
JP4942606B2 (ja) | 2012-05-30 |
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