SG139702A1 - Organometallic compounds - Google Patents

Organometallic compounds

Info

Publication number
SG139702A1
SG139702A1 SG200705552-8A SG2007055528A SG139702A1 SG 139702 A1 SG139702 A1 SG 139702A1 SG 2007055528 A SG2007055528 A SG 2007055528A SG 139702 A1 SG139702 A1 SG 139702A1
Authority
SG
Singapore
Prior art keywords
organometallic compounds
compounds
organometallic
phosphoamidinate
ald
Prior art date
Application number
SG200705552-8A
Other languages
English (en)
Inventor
Deodatta Vinayak She Khatkhate
Qing Min Wang
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of SG139702A1 publication Critical patent/SG139702A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/50—Organo-phosphines
    • C07F9/5045—Complexes or chelates of phosphines with metallic compounds or metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
SG200705552-8A 2006-07-31 2007-07-31 Organometallic compounds SG139702A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83447906P 2006-07-31 2006-07-31
US11/542,923 US7547631B2 (en) 2006-07-31 2006-10-04 Organometallic compounds

Publications (1)

Publication Number Publication Date
SG139702A1 true SG139702A1 (en) 2008-02-29

Family

ID=38565757

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200705552-8A SG139702A1 (en) 2006-07-31 2007-07-31 Organometallic compounds

Country Status (5)

Country Link
US (1) US7547631B2 (fr)
EP (1) EP1887012A3 (fr)
JP (1) JP2008115160A (fr)
SG (1) SG139702A1 (fr)
TW (1) TWI343387B (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5032085B2 (ja) * 2006-10-06 2012-09-26 田中貴金属工業株式会社 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法
US8454928B2 (en) * 2007-09-17 2013-06-04 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Tellurium precursors for GST deposition
US20090162973A1 (en) * 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
WO2010055423A2 (fr) * 2008-05-29 2010-05-20 L'air Liquide - Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Précurseurs de tellure pour dépôt de couche
US8636845B2 (en) * 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8236381B2 (en) * 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
WO2010103893A1 (fr) * 2009-03-13 2010-09-16 株式会社Adeka Procédé d'élimination des molécules d'eau résiduaires dans un procédé de production d'un film métallique mince, et solvant de purge
US8859785B2 (en) * 2009-05-29 2014-10-14 Air Products And Chemicals, Inc. Volatile group 2 metal precursors
JP2011054935A (ja) * 2009-06-19 2011-03-17 Rohm & Haas Electronic Materials Llc ドーピング方法
KR101805211B1 (ko) 2009-09-02 2017-12-05 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 게르마늄 함유 막 침착을 위한 디할라이드 게르마늄(ⅱ) 전구체
EP2339048B1 (fr) * 2009-09-14 2016-12-07 Rohm and Haas Electronic Materials, L.L.C. Procédé de dépôt de composés organométalliques
KR20120123126A (ko) 2010-02-03 2012-11-07 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 박막 증착용 칼코게나이드-함유 전구체, 그의 제조 방법 및 사용 방법
CN102199166A (zh) * 2011-04-11 2011-09-28 南京航空航天大学 官能化烷氧基稀土金属镧配合物及其合成方法与应用
EP2559682B1 (fr) * 2011-08-15 2016-08-03 Rohm and Haas Electronic Materials LLC Préparation de composés organométalliques
KR102008445B1 (ko) * 2014-02-26 2019-08-08 주식회사 유진테크 머티리얼즈 지르코늄 함유막 형성용 전구체 조성물 및 이를 이용한 지르코늄 함유막 형성 방법
EP3408273B1 (fr) * 2016-01-27 2020-06-17 Basf Se Procédé pour la production de films minces inorganiques
US11319332B2 (en) * 2017-12-20 2022-05-03 Basf Se Process for the generation of metal-containing films

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4009394A1 (de) 1989-12-12 1991-06-13 Merck Patent Gmbh Heterocyclische metallorganische verbindungen
US5707913A (en) * 1994-06-15 1998-01-13 Basf Aktiengesellschaft Amidinato catalyst systems for the polymerization of olefins
US5502128A (en) * 1994-12-12 1996-03-26 University Of Massachusetts Group 4 metal amidinate catalysts and addition polymerization process using same
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US7037574B2 (en) * 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
WO2004000894A1 (fr) 2002-06-21 2003-12-31 Exxonmobil Chemical Patents Inc. Catalyseurs de polymerisation d'ethylene a base d'yttrium comprenant des ligands auxiliaires amidinate volumineux
JP4988159B2 (ja) * 2002-11-15 2012-08-01 プレジデント アンド フェロウズ オブ ハーバード カレッジ 金属アミジナートを用いる原子層の析出
US7396949B2 (en) * 2003-08-19 2008-07-08 Denk Michael K Class of volatile compounds for the deposition of thin films of metals and metal compounds
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
WO2006012052A2 (fr) 2004-06-25 2006-02-02 Arkema, Inc. Precurseurs utilises pour le depot chimique en phase vapeur contenant des ligands amidinates
US7300873B2 (en) * 2004-08-13 2007-11-27 Micron Technology, Inc. Systems and methods for forming metal-containing layers using vapor deposition processes
EP1779419A4 (fr) * 2004-08-16 2009-04-08 Aviza Tech Inc Systeme d'injection directe de liquide et procede de formation de films dielectriques multicomposants
US7250367B2 (en) * 2004-09-01 2007-07-31 Micron Technology, Inc. Deposition methods using heteroleptic precursors

Also Published As

Publication number Publication date
US7547631B2 (en) 2009-06-16
TWI343387B (en) 2011-06-11
EP1887012A2 (fr) 2008-02-13
TW200815462A (en) 2008-04-01
US20080026577A1 (en) 2008-01-31
EP1887012A3 (fr) 2008-02-27
JP2008115160A (ja) 2008-05-22

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