SG139682A1 - System and method to compensate for critical dimension non-uniformity in a lithography system - Google Patents

System and method to compensate for critical dimension non-uniformity in a lithography system

Info

Publication number
SG139682A1
SG139682A1 SG200705348-1A SG2007053481A SG139682A1 SG 139682 A1 SG139682 A1 SG 139682A1 SG 2007053481 A SG2007053481 A SG 2007053481A SG 139682 A1 SG139682 A1 SG 139682A1
Authority
SG
Singapore
Prior art keywords
illumination beam
radiation
compensate
critical dimension
illumination
Prior art date
Application number
SG200705348-1A
Other languages
English (en)
Inventor
Horssen Hermanus Gerardus Van
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG139682A1 publication Critical patent/SG139682A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
SG200705348-1A 2006-07-27 2007-07-18 System and method to compensate for critical dimension non-uniformity in a lithography system SG139682A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/493,851 US7548315B2 (en) 2006-07-27 2006-07-27 System and method to compensate for critical dimension non-uniformity in a lithography system

Publications (1)

Publication Number Publication Date
SG139682A1 true SG139682A1 (en) 2008-02-29

Family

ID=38441884

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200705348-1A SG139682A1 (en) 2006-07-27 2007-07-18 System and method to compensate for critical dimension non-uniformity in a lithography system

Country Status (7)

Country Link
US (1) US7548315B2 (fr)
EP (1) EP1882987A3 (fr)
JP (1) JP2008033329A (fr)
KR (1) KR100861339B1 (fr)
CN (1) CN101114130A (fr)
SG (1) SG139682A1 (fr)
TW (1) TW200823605A (fr)

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DE102008002749A1 (de) * 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
CN101923280B (zh) * 2009-06-17 2012-10-03 上海华虹Nec电子有限公司 具有提高Si/Ge发射极窗口图形保真度的光学临近修正图形的Si/Ge器件
CN102117010B (zh) * 2010-01-04 2012-09-26 中芯国际集成电路制造(上海)有限公司 一种光学邻近修正方法
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
US9107854B2 (en) 2012-05-03 2015-08-18 Elc Management Llc Emulsified MQ resin: compositions and methods
CN102778820A (zh) * 2012-08-17 2012-11-14 杭州士兰明芯科技有限公司 基于空间光调制器的无掩膜图形曝光系统
US8815498B2 (en) * 2012-08-22 2014-08-26 Nanya Technology Corp. Method of forming tight-pitched pattern
KR102120624B1 (ko) 2013-04-04 2020-06-10 삼성디스플레이 주식회사 Glv를 이용한 디지털 노광기 및 dmd를 이용한 디지털 노광기
US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
US11380516B2 (en) 2017-04-13 2022-07-05 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10522322B2 (en) 2017-04-13 2019-12-31 Fractilia, Llc System and method for generating and analyzing roughness measurements

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JPH0588349A (ja) * 1991-09-27 1993-04-09 Fujitsu Ltd レチクルマスク及び投影露光方法
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Also Published As

Publication number Publication date
EP1882987A3 (fr) 2009-07-15
EP1882987A2 (fr) 2008-01-30
TW200823605A (en) 2008-06-01
US20080024744A1 (en) 2008-01-31
US7548315B2 (en) 2009-06-16
KR20080011078A (ko) 2008-01-31
KR100861339B1 (ko) 2008-10-01
JP2008033329A (ja) 2008-02-14
CN101114130A (zh) 2008-01-30

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