SG131880A1 - Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device - Google Patents

Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device

Info

Publication number
SG131880A1
SG131880A1 SG200607120-3A SG2006071203A SG131880A1 SG 131880 A1 SG131880 A1 SG 131880A1 SG 2006071203 A SG2006071203 A SG 2006071203A SG 131880 A1 SG131880 A1 SG 131880A1
Authority
SG
Singapore
Prior art keywords
substrate
thermally
fields
predicting
arrangement
Prior art date
Application number
SG200607120-3A
Other languages
English (en)
Inventor
Boris Menchtchikov
Jong Frederik Eduard De
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG131880A1 publication Critical patent/SG131880A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
SG200607120-3A 2005-10-12 2006-10-12 Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device SG131880A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/247,594 US7462429B2 (en) 2005-10-12 2005-10-12 Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate

Publications (1)

Publication Number Publication Date
SG131880A1 true SG131880A1 (en) 2007-05-28

Family

ID=37594958

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200607120-3A SG131880A1 (en) 2005-10-12 2006-10-12 Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device

Country Status (7)

Country Link
US (4) US7462429B2 (zh)
EP (1) EP1775635B1 (zh)
JP (1) JP4519823B2 (zh)
KR (1) KR100819485B1 (zh)
CN (1) CN101008789B (zh)
SG (1) SG131880A1 (zh)
TW (1) TWI344671B (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7250237B2 (en) * 2003-12-23 2007-07-31 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
US8330936B2 (en) 2006-09-20 2012-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2007615A (en) * 2010-11-30 2012-05-31 Asml Netherlands Bv Method of operating a patterning device and lithographic apparatus.
JP6362399B2 (ja) * 2013-05-30 2018-07-25 キヤノン株式会社 インプリント装置、インプリント方法および物品の製造方法
KR101493013B1 (ko) * 2013-06-14 2015-02-13 에이피시스템 주식회사 빔 패터닝 방향 및 패터닝 위치 보정 방법
US10359696B2 (en) * 2013-10-17 2019-07-23 Canon Kabushiki Kaisha Imprint apparatus, and method of manufacturing article
JP6676527B6 (ja) * 2013-11-27 2020-05-20 東京エレクトロン株式会社 光学投影を使用する基板チューニングシステム及び方法
KR101890227B1 (ko) 2014-01-24 2018-08-22 에이에스엠엘 네델란즈 비.브이. 기판 상에서 측정 작업을 수행하도록 작동가능한 장치, 리소그래피 장치, 및 기판 상에서 측정 작업을 수행하는 방법
USRE49142E1 (en) 2014-08-06 2022-07-19 Asml Netherlands B.V. Lithographic apparatus and an object positioning system
KR101991498B1 (ko) 2014-12-12 2019-06-20 에이에스엠엘 네델란즈 비.브이. 기판 모델 파라미터를 계산하고 리소그래피 처리를 제어하기 위한 방법 및 장치
US10915689B2 (en) 2015-10-19 2021-02-09 Asml Netherlands B.V. Method and apparatus to correct for patterning process error
US10719011B2 (en) 2015-10-19 2020-07-21 Asml Netherlands B.V. Method and apparatus to correct for patterning process error
WO2017067752A1 (en) 2015-10-19 2017-04-27 Asml Netherlands B.V. Method and apparatus to correct for patterning process error
US20180314149A1 (en) * 2015-10-19 2018-11-01 Aslm Netherlands B.V. Method and apparatus to correct for patterning process error
US11036146B2 (en) 2015-10-19 2021-06-15 Asml Netherlands B. V. Method and apparatus to reduce effects of nonlinear behavior
US10163302B2 (en) 2016-08-08 2018-12-25 Double Down Interactive Llc Gaming system and method for providing a variable award in association with a virtual currency purchase
JP7022531B2 (ja) * 2017-08-03 2022-02-18 キヤノン株式会社 露光方法、露光装置、および物品の製造方法
EP3444673A1 (en) * 2017-08-14 2019-02-20 ASML Netherlands B.V. Method of adapting feed-forward parameters
WO2022258251A1 (en) 2021-06-07 2022-12-15 Asml Netherlands B.V. Method and arrangement for determining thermally-induced deformations

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3047461B2 (ja) * 1990-11-26 2000-05-29 株式会社ニコン 投影露光装置、投影露光方法、及び半導体集積回路製造方法
JP3339079B2 (ja) * 1992-01-23 2002-10-28 株式会社ニコン アライメント装置、そのアライメント装置を用いた露光装置、並びにアライメント方法、そのアライメント方法を含む露光方法、その露光方法を含むデバイス製造方法、そのデバイス製造方法により製造されたデバイス
JP3634563B2 (ja) * 1997-05-09 2005-03-30 キヤノン株式会社 露光方法および装置並びにデバイス製造方法
JP3720582B2 (ja) * 1998-06-04 2005-11-30 キヤノン株式会社 投影露光装置及び投影露光方法
US6424879B1 (en) 1999-04-13 2002-07-23 Applied Materials, Inc. System and method to correct for distortion caused by bulk heating in a substrate
JP2001319872A (ja) * 2000-03-01 2001-11-16 Nikon Corp 露光装置
JP2004128196A (ja) 2002-10-02 2004-04-22 Hitachi High-Technologies Corp 電子線描画装置と電子線描画方法
US7250237B2 (en) 2003-12-23 2007-07-31 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
JP4760705B2 (ja) * 2004-03-01 2011-08-31 株式会社ニコン 事前計測処理方法、露光システム及び基板処理装置
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
US7462430B2 (en) 2008-12-09
US20090055114A1 (en) 2009-02-26
KR100819485B1 (ko) 2008-04-07
US7710538B2 (en) 2010-05-04
JP4519823B2 (ja) 2010-08-04
TW200731334A (en) 2007-08-16
JP2007110130A (ja) 2007-04-26
CN101008789B (zh) 2011-06-01
US20070082280A1 (en) 2007-04-12
US7710539B2 (en) 2010-05-04
US20070090853A1 (en) 2007-04-26
CN101008789A (zh) 2007-08-01
KR20070040744A (ko) 2007-04-17
TWI344671B (en) 2011-07-01
EP1775635A1 (en) 2007-04-18
US20090055115A1 (en) 2009-02-26
US7462429B2 (en) 2008-12-09
EP1775635B1 (en) 2012-05-30

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