SG131880A1 - Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device - Google Patents

Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device

Info

Publication number
SG131880A1
SG131880A1 SG200607120-3A SG2006071203A SG131880A1 SG 131880 A1 SG131880 A1 SG 131880A1 SG 2006071203 A SG2006071203 A SG 2006071203A SG 131880 A1 SG131880 A1 SG 131880A1
Authority
SG
Singapore
Prior art keywords
substrate
thermally
fields
predicting
arrangement
Prior art date
Application number
SG200607120-3A
Other languages
English (en)
Inventor
Boris Menchtchikov
Jong Frederik Eduard De
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG131880A1 publication Critical patent/SG131880A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200607120-3A 2005-10-12 2006-10-12 Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device SG131880A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/247,594 US7462429B2 (en) 2005-10-12 2005-10-12 Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate

Publications (1)

Publication Number Publication Date
SG131880A1 true SG131880A1 (en) 2007-05-28

Family

ID=37594958

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200607120-3A SG131880A1 (en) 2005-10-12 2006-10-12 Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device

Country Status (7)

Country Link
US (4) US7462429B2 (ja)
EP (1) EP1775635B1 (ja)
JP (1) JP4519823B2 (ja)
KR (1) KR100819485B1 (ja)
CN (1) CN101008789B (ja)
SG (1) SG131880A1 (ja)
TW (1) TWI344671B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7250237B2 (en) * 2003-12-23 2007-07-31 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
US8330936B2 (en) * 2006-09-20 2012-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2007615A (en) 2010-11-30 2012-05-31 Asml Netherlands Bv Method of operating a patterning device and lithographic apparatus.
JP6362399B2 (ja) * 2013-05-30 2018-07-25 キヤノン株式会社 インプリント装置、インプリント方法および物品の製造方法
KR101493013B1 (ko) * 2013-06-14 2015-02-13 에이피시스템 주식회사 빔 패터닝 방향 및 패터닝 위치 보정 방법
US10359696B2 (en) * 2013-10-17 2019-07-23 Canon Kabushiki Kaisha Imprint apparatus, and method of manufacturing article
KR101878578B1 (ko) * 2013-11-27 2018-07-13 도쿄엘렉트론가부시키가이샤 광학 프로젝션을 이용한 기판 튜닝 시스템 및 방법
US9989858B2 (en) 2014-01-24 2018-06-05 Asml Netherlands B.V. Apparatus operable to perform a measurement operation on a substrate, lithographic apparatus, and method of performing a measurement operation on a substrate
JP6420895B2 (ja) 2014-08-06 2018-11-07 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び物体位置決めシステム
KR102330321B1 (ko) * 2014-12-12 2021-11-23 에이에스엠엘 네델란즈 비.브이. 기판 모델 파라미터를 계산하고 리소그래피 처리를 제어하기 위한 방법 및 장치
KR102059018B1 (ko) 2015-10-19 2019-12-24 에이에스엠엘 네델란즈 비.브이. 패터닝 공정 오차를 보정하는 장치 및 방법
WO2017067752A1 (en) 2015-10-19 2017-04-27 Asml Netherlands B.V. Method and apparatus to correct for patterning process error
US10915689B2 (en) 2015-10-19 2021-02-09 Asml Netherlands B.V. Method and apparatus to correct for patterning process error
US11036146B2 (en) 2015-10-19 2021-06-15 Asml Netherlands B. V. Method and apparatus to reduce effects of nonlinear behavior
US20180314149A1 (en) * 2015-10-19 2018-11-01 Aslm Netherlands B.V. Method and apparatus to correct for patterning process error
US10163302B2 (en) 2016-08-08 2018-12-25 Double Down Interactive Llc Gaming system and method for providing a variable award in association with a virtual currency purchase
JP7022531B2 (ja) * 2017-08-03 2022-02-18 キヤノン株式会社 露光方法、露光装置、および物品の製造方法
EP3444673A1 (en) * 2017-08-14 2019-02-20 ASML Netherlands B.V. Method of adapting feed-forward parameters
CN117413225A (zh) 2021-06-07 2024-01-16 Asml荷兰有限公司 用于确定热致变形的方法和装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3047461B2 (ja) * 1990-11-26 2000-05-29 株式会社ニコン 投影露光装置、投影露光方法、及び半導体集積回路製造方法
JP3339079B2 (ja) * 1992-01-23 2002-10-28 株式会社ニコン アライメント装置、そのアライメント装置を用いた露光装置、並びにアライメント方法、そのアライメント方法を含む露光方法、その露光方法を含むデバイス製造方法、そのデバイス製造方法により製造されたデバイス
JP3634563B2 (ja) * 1997-05-09 2005-03-30 キヤノン株式会社 露光方法および装置並びにデバイス製造方法
JP3720582B2 (ja) * 1998-06-04 2005-11-30 キヤノン株式会社 投影露光装置及び投影露光方法
US6424879B1 (en) 1999-04-13 2002-07-23 Applied Materials, Inc. System and method to correct for distortion caused by bulk heating in a substrate
JP2001319872A (ja) * 2000-03-01 2001-11-16 Nikon Corp 露光装置
JP2004128196A (ja) 2002-10-02 2004-04-22 Hitachi High-Technologies Corp 電子線描画装置と電子線描画方法
US7250237B2 (en) * 2003-12-23 2007-07-31 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
KR101144683B1 (ko) * 2004-03-01 2012-05-25 가부시키가이샤 니콘 사전 계측 처리 방법, 노광 시스템 및 기판 처리 장치
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
JP2007110130A (ja) 2007-04-26
US7710539B2 (en) 2010-05-04
CN101008789A (zh) 2007-08-01
EP1775635B1 (en) 2012-05-30
US20090055115A1 (en) 2009-02-26
TWI344671B (en) 2011-07-01
EP1775635A1 (en) 2007-04-18
JP4519823B2 (ja) 2010-08-04
US7462430B2 (en) 2008-12-09
CN101008789B (zh) 2011-06-01
US20070082280A1 (en) 2007-04-12
KR20070040744A (ko) 2007-04-17
US20070090853A1 (en) 2007-04-26
TW200731334A (en) 2007-08-16
US7462429B2 (en) 2008-12-09
US20090055114A1 (en) 2009-02-26
US7710538B2 (en) 2010-05-04
KR100819485B1 (ko) 2008-04-07

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