SG130135A1 - Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal - Google Patents

Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal

Info

Publication number
SG130135A1
SG130135A1 SG200605370-6A SG2006053706A SG130135A1 SG 130135 A1 SG130135 A1 SG 130135A1 SG 2006053706 A SG2006053706 A SG 2006053706A SG 130135 A1 SG130135 A1 SG 130135A1
Authority
SG
Singapore
Prior art keywords
supporting
single crystal
semiconductor material
supporting apparatus
diameter
Prior art date
Application number
SG200605370-6A
Other languages
English (en)
Inventor
Dieter Knerer
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG130135A1 publication Critical patent/SG130135A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SG200605370-6A 2005-08-25 2006-08-08 Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal SG130135A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005040229A DE102005040229B4 (de) 2005-08-25 2005-08-25 Unterstützungsvorrichtung zur Unterstützung eines wachsenden Einkristalls aus Halbleitermaterial und Verfahren zur Herstellung eines Einkristalls

Publications (1)

Publication Number Publication Date
SG130135A1 true SG130135A1 (en) 2007-03-20

Family

ID=37735360

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200605370-6A SG130135A1 (en) 2005-08-25 2006-08-08 Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal

Country Status (7)

Country Link
US (1) US7815736B2 (zh)
JP (1) JP4651032B2 (zh)
KR (1) KR100808929B1 (zh)
CN (1) CN100532657C (zh)
DE (1) DE102005040229B4 (zh)
SG (1) SG130135A1 (zh)
TW (1) TWI333003B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114657630B (zh) * 2022-03-10 2023-07-04 包头美科硅能源有限公司 一种单晶炉加料筒及籽晶稳定装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
JP2973916B2 (ja) * 1996-03-15 1999-11-08 住友金属工業株式会社 種結晶保持具及び該種結晶保持具を用いた単結晶の引き上げ方法
JP3528448B2 (ja) * 1996-07-23 2004-05-17 信越半導体株式会社 単結晶の引上げ方法及び装置
JPH10273387A (ja) 1997-03-27 1998-10-13 Super Silicon Kenkyusho:Kk 単結晶引上げ方法及び単結晶引上げ装置
JPH10273390A (ja) * 1997-03-28 1998-10-13 Super Silicon Kenkyusho:Kk 半導体単結晶製造装置
JPH10279386A (ja) * 1997-03-31 1998-10-20 Super Silicon Kenkyusho:Kk 単結晶引上げ装置及び単結晶支持機構並びに単結晶引上げ方法
US6015461A (en) * 1997-09-12 2000-01-18 Sumitomo Sitix Corporation Seed crystal holders, for pulling a single crystal
JPH11199374A (ja) * 1998-01-07 1999-07-27 Komatsu Ltd 単結晶の引き上げ装置および落下防止装置
CN1329682A (zh) * 1998-10-14 2002-01-02 Memc电子材料有限公司 精确提拉晶体的方法和装置
JP2002137991A (ja) * 2000-10-31 2002-05-14 Super Silicon Kenkyusho:Kk 単結晶製造方法及び単結晶引き上げ装置

Also Published As

Publication number Publication date
DE102005040229A1 (de) 2007-03-08
KR100808929B1 (ko) 2008-03-03
US20070044711A1 (en) 2007-03-01
TW200734492A (en) 2007-09-16
CN100532657C (zh) 2009-08-26
JP4651032B2 (ja) 2011-03-16
DE102005040229B4 (de) 2011-12-22
JP2007055894A (ja) 2007-03-08
US7815736B2 (en) 2010-10-19
CN1920118A (zh) 2007-02-28
KR20070024394A (ko) 2007-03-02
TWI333003B (en) 2010-11-11

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