SG128671A1 - Free radical initiator in remote plasma chamber clean - Google Patents

Free radical initiator in remote plasma chamber clean

Info

Publication number
SG128671A1
SG128671A1 SG200604530A SG200604530A SG128671A1 SG 128671 A1 SG128671 A1 SG 128671A1 SG 200604530 A SG200604530 A SG 200604530A SG 200604530 A SG200604530 A SG 200604530A SG 128671 A1 SG128671 A1 SG 128671A1
Authority
SG
Singapore
Prior art keywords
free radical
radical initiator
plasma chamber
remote plasma
chamber clean
Prior art date
Application number
SG200604530A
Other languages
English (en)
Inventor
Bing Ji
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG128671A1 publication Critical patent/SG128671A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG200604530A 2005-07-08 2006-07-03 Free radical initiator in remote plasma chamber clean SG128671A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/177,078 US20070006893A1 (en) 2005-07-08 2005-07-08 Free radical initiator in remote plasma chamber clean

Publications (1)

Publication Number Publication Date
SG128671A1 true SG128671A1 (en) 2007-01-30

Family

ID=37270263

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200604530A SG128671A1 (en) 2005-07-08 2006-07-03 Free radical initiator in remote plasma chamber clean

Country Status (7)

Country Link
US (1) US20070006893A1 (ko)
EP (1) EP1741803A2 (ko)
JP (1) JP2007016315A (ko)
KR (1) KR100786611B1 (ko)
CN (1) CN1891856A (ko)
SG (1) SG128671A1 (ko)
TW (1) TWI293900B (ko)

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US7331321B2 (en) * 2005-07-01 2008-02-19 Gene Thompson Handheld electric starter for engines and method of use
US20070254112A1 (en) * 2006-04-26 2007-11-01 Applied Materials, Inc. Apparatus and method for high utilization of process chambers of a cluster system through staggered plasma cleaning
US8262800B1 (en) * 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
US8129270B1 (en) 2008-12-10 2012-03-06 Novellus Systems, Inc. Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
US20100144140A1 (en) * 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
US9548228B2 (en) 2009-08-04 2017-01-17 Lam Research Corporation Void free tungsten fill in different sized features
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
JP5934222B2 (ja) * 2010-09-15 2016-06-15 プラクスエア・テクノロジー・インコーポレイテッド イオン源の寿命を延長するための方法
US20120108072A1 (en) * 2010-10-29 2012-05-03 Angelov Ivelin A Showerhead configurations for plasma reactors
KR102131581B1 (ko) 2012-03-27 2020-07-08 노벨러스 시스템즈, 인코포레이티드 텅스텐 피처 충진
US9315899B2 (en) 2012-06-15 2016-04-19 Novellus Systems, Inc. Contoured showerhead for improved plasma shaping and control
CN104853855B (zh) * 2012-12-18 2020-07-24 海星化学有限公司 用于薄膜沉积反应器和薄膜层的原位干式清洁的过程和方法
WO2014192062A1 (ja) * 2013-05-27 2014-12-04 株式会社アドテック プラズマ テクノロジー マイクロ波プラズマ発生装置の空洞共振器
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
JP6169666B2 (ja) * 2015-10-20 2017-07-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10727050B1 (en) 2016-06-15 2020-07-28 Northrop Grumman Systems Corporation Wafer-scale catalytic deposition of black phosphorus
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US10566211B2 (en) 2016-08-30 2020-02-18 Lam Research Corporation Continuous and pulsed RF plasma for etching metals
KR102504833B1 (ko) 2017-11-16 2023-03-02 삼성전자 주식회사 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법
CN109868458B (zh) * 2017-12-05 2021-12-17 北京北方华创微电子装备有限公司 一种半导体设备的清洗系统及清洗方法
JP7367703B2 (ja) * 2018-12-25 2023-10-24 株式会社レゾナック 付着物除去方法及び成膜方法
JP7166950B2 (ja) 2019-02-07 2022-11-08 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
KR102599015B1 (ko) * 2019-09-11 2023-11-06 주식회사 테스 기판 처리 방법
KR102516340B1 (ko) * 2020-09-08 2023-03-31 주식회사 유진테크 기판 처리 장치 및 기판 처리 장치의 운용 방법

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US4687544A (en) * 1985-05-17 1987-08-18 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
GB2183204A (en) 1985-11-22 1987-06-03 Advanced Semiconductor Mat Nitrogen trifluoride as an in-situ cleaning agent
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US4857140A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US5043299B1 (en) * 1989-12-01 1997-02-25 Applied Materials Inc Process for selective deposition of tungsten on semiconductor wafer
US5421957A (en) * 1993-07-30 1995-06-06 Applied Materials, Inc. Low temperature etching in cold-wall CVD systems
US8075789B1 (en) * 1997-07-11 2011-12-13 Applied Materials, Inc. Remote plasma cleaning source having reduced reactivity with a substrate processing chamber
US6579805B1 (en) * 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
US6263830B1 (en) * 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6938638B2 (en) * 2000-12-28 2005-09-06 Kabushiki Kaisha Toshiba Gas circulating-processing apparatus
US20020144706A1 (en) * 2001-04-10 2002-10-10 Davis Matthew F. Remote plasma cleaning of pumpstack components of a reactor chamber
US6767836B2 (en) * 2002-09-04 2004-07-27 Asm Japan K.K. Method of cleaning a CVD reaction chamber using an active oxygen species
US7055263B2 (en) * 2003-11-25 2006-06-06 Air Products And Chemicals, Inc. Method for cleaning deposition chambers for high dielectric constant materials
US20060196525A1 (en) * 2005-03-03 2006-09-07 Vrtis Raymond N Method for removing a residue from a chamber

Also Published As

Publication number Publication date
KR100786611B1 (ko) 2007-12-21
CN1891856A (zh) 2007-01-10
TW200716269A (en) 2007-05-01
KR20070006570A (ko) 2007-01-11
EP1741803A2 (en) 2007-01-10
US20070006893A1 (en) 2007-01-11
TWI293900B (en) 2008-03-01
JP2007016315A (ja) 2007-01-25

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