SG128658A1 - Focus determination method, device manufacturing method, and mask - Google Patents

Focus determination method, device manufacturing method, and mask

Info

Publication number
SG128658A1
SG128658A1 SG200604437A SG200604437A SG128658A1 SG 128658 A1 SG128658 A1 SG 128658A1 SG 200604437 A SG200604437 A SG 200604437A SG 200604437 A SG200604437 A SG 200604437A SG 128658 A1 SG128658 A1 SG 128658A1
Authority
SG
Singapore
Prior art keywords
mask
device manufacturing
focus determination
determination method
focus
Prior art date
Application number
SG200604437A
Other languages
English (en)
Inventor
Van Der Maurits Schaar
Den Arie Jeffrey Boef
Mircea Dusa
Antoine Gaston Marie Kiers
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG128658A1 publication Critical patent/SG128658A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Screen Printers (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
SG200604437A 2005-06-30 2006-06-29 Focus determination method, device manufacturing method, and mask SG128658A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/170,747 US7532307B2 (en) 2005-06-30 2005-06-30 Focus determination method, device manufacturing method, and mask

Publications (1)

Publication Number Publication Date
SG128658A1 true SG128658A1 (en) 2007-01-30

Family

ID=36763047

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200604437A SG128658A1 (en) 2005-06-30 2006-06-29 Focus determination method, device manufacturing method, and mask

Country Status (7)

Country Link
US (1) US7532307B2 (fr)
EP (1) EP1739491B1 (fr)
JP (1) JP4408876B2 (fr)
KR (1) KR100803267B1 (fr)
CN (1) CN1892440B (fr)
SG (1) SG128658A1 (fr)
TW (1) TWI326016B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7916284B2 (en) * 2006-07-18 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7852459B2 (en) 2007-02-02 2010-12-14 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
NL1036856A1 (nl) 2008-04-24 2009-10-27 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
KR101461457B1 (ko) * 2009-07-31 2014-11-13 에이에스엠엘 네델란즈 비.브이. 계측 방법 및 장치, 리소그래피 시스템, 및 리소그래피 처리 셀
US9690210B2 (en) 2011-08-18 2017-06-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9466100B2 (en) 2012-06-06 2016-10-11 Kla-Tencor Corporation Focus monitoring method using asymmetry embedded imaging target
CN103832223A (zh) * 2012-11-20 2014-06-04 傅黎明 一种tpms技术缺陷改进方案
US9411249B2 (en) 2013-09-23 2016-08-09 Globalfoundries Inc. Differential dose and focus monitor
JP6334708B2 (ja) * 2013-12-17 2018-05-30 エーエスエムエル ネザーランズ ビー．ブイ． 検査方法およびリソグラフィ装置
KR102238708B1 (ko) 2014-08-19 2021-04-12 삼성전자주식회사 리소그래피 공정의 초점 이동 체크 방법 및 이를 이용한 전사 패턴 오류 분석 방법

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0502679B1 (fr) * 1991-03-04 2001-03-07 AT&T Corp. Procédé de fabrication des circuits intégrés à semi-conducteur utilisant des images latentes
DE69531854T2 (de) * 1994-08-02 2004-08-19 Koninklijke Philips Electronics N.V. Verfahren zur wiederholten abbildung eines maskenmusters auf einem substrat
US5703692A (en) * 1995-08-03 1997-12-30 Bio-Rad Laboratories, Inc. Lens scatterometer system employing source light beam scanning means
US5880838A (en) * 1996-06-05 1999-03-09 California Institute Of California System and method for optically measuring a structure
US5963329A (en) * 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines
JP3949853B2 (ja) * 1999-09-28 2007-07-25 株式会社東芝 露光装置の制御方法及び半導体製造装置の制御方法
US6429943B1 (en) * 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6689519B2 (en) * 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US6429930B1 (en) * 2000-09-06 2002-08-06 Accent Optical Technologies, Inc. Determination of center of focus by diffraction signature analysis
US6753961B1 (en) * 2000-09-18 2004-06-22 Therma-Wave, Inc. Spectroscopic ellipsometer without rotating components
IL138552A (en) * 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Measurement of transverse displacement by optical method
US6750968B2 (en) * 2000-10-03 2004-06-15 Accent Optical Technologies, Inc. Differential numerical aperture methods and device
US6768983B1 (en) * 2000-11-28 2004-07-27 Timbre Technologies, Inc. System and method for real-time library generation of grating profiles
US6515744B2 (en) * 2001-02-08 2003-02-04 Therma-Wave, Inc. Small spot ellipsometer
WO2002065545A2 (fr) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Metrologie d'alignement des superpositions utilisant des reseaux de diffraction
US6699624B2 (en) * 2001-02-27 2004-03-02 Timbre Technologies, Inc. Grating test patterns and methods for overlay metrology
KR100536646B1 (ko) * 2001-03-02 2005-12-14 액센트 옵티칼 테크놀로지스 인코포레이티드 산란 측정법을 이용한 라인 프로파일 비대칭 측정
US7382447B2 (en) * 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
US6704661B1 (en) * 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6785638B2 (en) * 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
US7061615B1 (en) * 2001-09-20 2006-06-13 Nanometrics Incorporated Spectroscopically measured overlay target
JP3615181B2 (ja) * 2001-11-06 2005-01-26 株式会社東芝 露光装置の検査方法、焦点位置を補正する露光方法、および半導体装置の製造方法
US6884552B2 (en) * 2001-11-09 2005-04-26 Kla-Tencor Technologies Corporation Focus masking structures, focus patterns and measurements thereof
US6608690B2 (en) * 2001-12-04 2003-08-19 Timbre Technologies, Inc. Optical profilometry of additional-material deviations in a periodic grating
US6772084B2 (en) * 2002-01-31 2004-08-03 Timbre Technologies, Inc. Overlay measurements using periodic gratings
US6813034B2 (en) * 2002-02-05 2004-11-02 Therma-Wave, Inc. Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements
US7061627B2 (en) * 2002-03-13 2006-06-13 Therma-Wave, Inc. Optical scatterometry of asymmetric lines and structures
US6721691B2 (en) * 2002-03-26 2004-04-13 Timbre Technologies, Inc. Metrology hardware specification using a hardware simulator
US6928628B2 (en) * 2002-06-05 2005-08-09 Kla-Tencor Technologies Corporation Use of overlay diagnostics for enhanced automatic process control
US7046376B2 (en) * 2002-07-05 2006-05-16 Therma-Wave, Inc. Overlay targets with isolated, critical-dimension features and apparatus to measure overlay
US6919964B2 (en) * 2002-07-09 2005-07-19 Therma-Wave, Inc. CD metrology analysis using a finite difference method
CN1241067C (zh) * 2002-08-02 2006-02-08 南亚科技股份有限公司 调整聚焦位置的方法
DE60314484T2 (de) * 2002-11-01 2008-02-21 Asml Netherlands B.V. Untersuchungsverfahren und Verfahren zur Herstellung einer Vorrichtung
US7151594B2 (en) * 2002-11-01 2006-12-19 Asml Netherlands B.V. Test pattern, inspection method, and device manufacturing method
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
US7061623B2 (en) * 2003-08-25 2006-06-13 Spectel Research Corporation Interferometric back focal plane scatterometry with Koehler illumination
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20060109463A1 (en) * 2004-11-22 2006-05-25 Asml Netherlands B.V. Latent overlay metrology
US7453577B2 (en) * 2004-12-14 2008-11-18 Asml Netherlands B.V. Apparatus and method for inspecting a patterned part of a sample

Also Published As

Publication number Publication date
EP1739491B1 (fr) 2017-08-09
KR100803267B1 (ko) 2008-02-14
JP2007013169A (ja) 2007-01-18
JP4408876B2 (ja) 2010-02-03
CN1892440A (zh) 2007-01-10
EP1739491A1 (fr) 2007-01-03
US20070003840A1 (en) 2007-01-04
TW200707136A (en) 2007-02-16
CN1892440B (zh) 2011-03-02
TWI326016B (en) 2010-06-11
KR20070003704A (ko) 2007-01-05
US7532307B2 (en) 2009-05-12

Similar Documents

Publication Publication Date Title
EP1906437A4 (fr) Procédé d'exposition, dispositif d'exposition et procédé de fabrication du dispositif
IL258838A (en) Exposure equipment, exposure method and method for producing a device
HK1243226B (zh) 曝光裝置、曝光方法以及器件製造方法
TWI347496B (en) Lithographic device, and method
EP1947683A4 (fr) Appareil et procede d'exposition, et procede de fabrication de dispositif
TWI346254B (en) Lithographic apparatus, device manufacturing method and device manufactured thereby
HK1189400A1 (zh) 曝光裝置、曝光方法、元件製造方法及維護方法
TWI315454B (en) Stage apparatus, lithographic apparatus and device manufacturing method
EP1873816A4 (fr) Dispositif d'exposition, méthode d'exposition et méthode pour la fabrication du dispositif
EP1865541A4 (fr) Procede et appareil d exposition et procede de fabrication du dispositif
HK1175858A1 (en) Exposure equipment and method, and device manufacturing method
EP1876635A4 (fr) Procede d' exposition, appareil d' exposition et procede de fabrication de dispositif
EP2006884A4 (fr) Dispositif mobile, dispositif d'exposition, procede d'exposition, corps a deplacement micrometrique et procede de fabrication de dispositifs
EP1808883A4 (fr) Procede de mesure, procede d'exposition et procede de fabrication de dispositif
SG128658A1 (en) Focus determination method, device manufacturing method, and mask
EP1962329A4 (fr) Dispositif de support de substrat, dispositif d' exposition, procede d' exposition et procede de fabrication du dispositif
EP1821338A4 (fr) Appareil et procede d`exposition et procede de fabrication d`un dispositif
EP1841207A4 (fr) Dispositif et procede d'imagerie et procede de conception du dispositif d'imagerie
EP1895570A4 (fr) Procede et appareil d'exposition, et procede de fabrication du dispositif
EP1816671A4 (fr) Procede d' exposition, procede de fabrication de dispositif et substrat
EP1843571A4 (fr) Dispositif de codage, methode de codage, programme de codage et dispositif d'imagerie
EP2084745A4 (fr) Dispositif et son procédé de fabrication
EP1808884A4 (fr) Appareil d exposition, procédé d exposition et procédé de fabrication de dispositif
IL186919A0 (en) Exposure method, exposure apparatus, and device manufacturing method
EP1965414A4 (fr) Procede d' exposition, appareil d' exposition, et procede de fabrication du dispositif