SG128449A1 - A method of detecting mask defects, a computer program and a reference substrate - Google Patents

A method of detecting mask defects, a computer program and a reference substrate

Info

Publication number
SG128449A1
SG128449A1 SG200306396A SG200306396A SG128449A1 SG 128449 A1 SG128449 A1 SG 128449A1 SG 200306396 A SG200306396 A SG 200306396A SG 200306396 A SG200306396 A SG 200306396A SG 128449 A1 SG128449 A1 SG 128449A1
Authority
SG
Singapore
Prior art keywords
mask
reference substrate
substrate
computer program
mask defects
Prior art date
Application number
SG200306396A
Other languages
English (en)
Inventor
Van Der Jan Evert Werf
Auke Jan Mud
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG128449A1 publication Critical patent/SG128449A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200306396A 2002-10-28 2003-10-28 A method of detecting mask defects, a computer program and a reference substrate SG128449A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02257465 2002-10-28

Publications (1)

Publication Number Publication Date
SG128449A1 true SG128449A1 (en) 2007-01-30

Family

ID=32668904

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200306396A SG128449A1 (en) 2002-10-28 2003-10-28 A method of detecting mask defects, a computer program and a reference substrate

Country Status (7)

Country Link
US (1) US7307712B2 (zh)
JP (1) JP2004191973A (zh)
KR (1) KR20040038756A (zh)
CN (2) CN1501174A (zh)
DE (1) DE60321525D1 (zh)
SG (1) SG128449A1 (zh)
TW (1) TWI245169B (zh)

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KR100684104B1 (ko) * 2005-08-02 2007-02-16 삼성전자주식회사 결함 검사 방법 및 이를 수행하기 위한 결함 검사 장치
KR100856579B1 (ko) * 2007-01-18 2008-09-04 홍운식 웨이퍼의 노광 에너지 정보를 축적하는 시스템에 의해 누적된 웨이퍼의 노광 에너지 정보를 이용한 노광용 마스크의 관리방법
CN101344715B (zh) * 2007-07-10 2011-07-13 联华电子股份有限公司 光掩模检测方法与在线即时光掩模检测方法
CN101546112B (zh) * 2008-03-25 2011-04-20 中芯国际集成电路制造(上海)有限公司 一种更替掩模版的方法
US8390781B2 (en) 2008-09-23 2013-03-05 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8390786B2 (en) 2008-09-23 2013-03-05 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8395752B2 (en) 2008-09-23 2013-03-12 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8670106B2 (en) * 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
US8041106B2 (en) * 2008-12-05 2011-10-18 Kla-Tencor Corp. Methods and systems for detecting defects on a reticle
CN102129164B (zh) * 2010-01-15 2012-08-22 中芯国际集成电路制造(上海)有限公司 掩膜版缺陷的判断方法及判断系统
CN102193302A (zh) * 2010-03-03 2011-09-21 中芯国际集成电路制造(上海)有限公司 一种掩膜图形缺陷的检测方法及系统
CN104317159A (zh) * 2010-03-03 2015-01-28 中芯国际集成电路制造(上海)有限公司 一种掩膜图形缺陷的检测方法及系统
CN102193306B (zh) * 2010-03-11 2012-09-05 中芯国际集成电路制造(上海)有限公司 设计光掩膜版的方法
US8502544B1 (en) * 2012-05-14 2013-08-06 Taiwan Mask Corporation Method for testing mask articles
US9607371B2 (en) 2013-04-01 2017-03-28 Kla-Tencor Corporation Mesoscopic defect detection for reticle inspection
TWI614569B (zh) * 2013-04-01 2018-02-11 克萊譚克公司 偵測光罩中之缺陷之方法及系統
NL2016982A (en) * 2015-07-16 2017-01-19 Asml Netherlands Bv An Inspection Substrate and an Inspection Method
DE102017203879B4 (de) * 2017-03-09 2023-06-07 Carl Zeiss Smt Gmbh Verfahren zum Analysieren einer defekten Stelle einer photolithographischen Maske
US10964014B2 (en) * 2017-10-30 2021-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Defect detecting method and defect detecting system
CN110824851B (zh) * 2018-08-13 2021-06-29 台湾积体电路制造股份有限公司 光刻设备的洁净度的检测方法以及反射式光掩模
US10830709B2 (en) * 2018-09-28 2020-11-10 Onto Innovation Inc. Interferometer with pixelated phase shift mask

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JPS594019A (ja) 1982-06-30 1984-01-10 Fujitsu Ltd パタ−ン比較検査方法
JPS59108318A (ja) 1982-12-14 1984-06-22 Oki Electric Ind Co Ltd １チツプレテイクルマスクの検査方法
DE3347645C1 (de) * 1983-12-30 1985-10-10 Dr.-Ing. Ludwig Pietzsch Gmbh & Co, 7505 Ettlingen Verfahren und Einrichtung zum opto-elektronischen Pruefen eines Flaechenmusters an einem Objekt
JPS63122119A (ja) 1986-11-11 1988-05-26 Ricoh Co Ltd 縮小投影露光装置用フオトマスクの検査方法
JP3069417B2 (ja) * 1991-11-21 2000-07-24 シャープ株式会社 位相シフトマスクの検査方法
JPH07229846A (ja) 1994-02-22 1995-08-29 Sony Corp 欠陥検査装置
JP3515199B2 (ja) * 1995-01-06 2004-04-05 大日本スクリーン製造株式会社 欠陥検査装置
SE515553C2 (sv) * 1996-06-28 2001-08-27 Ericsson Telefon Ab L M Kretskortstest
JP2867971B2 (ja) 1996-08-16 1999-03-10 日本電気株式会社 マスクの検査方法およびその検査装置
US6895109B1 (en) * 1997-09-04 2005-05-17 Texas Instruments Incorporated Apparatus and method for automatically detecting defects on silicon dies on silicon wafers
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US6691052B1 (en) * 2002-01-30 2004-02-10 Kla-Tencor Corporation Apparatus and methods for generating an inspection reference pattern
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US6855463B2 (en) * 2002-08-27 2005-02-15 Photronics, Inc. Photomask having an intermediate inspection film layer
US6967711B2 (en) * 2004-03-09 2005-11-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
US20040130711A1 (en) 2004-07-08
KR20040038756A (ko) 2004-05-08
TW200417824A (en) 2004-09-16
JP2004191973A (ja) 2004-07-08
TWI245169B (en) 2005-12-11
US7307712B2 (en) 2007-12-11
CN101520609A (zh) 2009-09-02
CN1501174A (zh) 2004-06-02
DE60321525D1 (de) 2008-07-24

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