SG120300A1 - System and method for reducing disturbances causedby movement in an immersion lithography system - Google Patents
System and method for reducing disturbances causedby movement in an immersion lithography systemInfo
- Publication number
- SG120300A1 SG120300A1 SG200505493A SG200505493A SG120300A1 SG 120300 A1 SG120300 A1 SG 120300A1 SG 200505493 A SG200505493 A SG 200505493A SG 200505493 A SG200505493 A SG 200505493A SG 120300 A1 SG120300 A1 SG 120300A1
- Authority
- SG
- Singapore
- Prior art keywords
- causedby
- movement
- immersion lithography
- reducing disturbances
- lithography system
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/927,394 US20060044533A1 (en) | 2004-08-27 | 2004-08-27 | System and method for reducing disturbances caused by movement in an immersion lithography system |
Publications (1)
Publication Number | Publication Date |
---|---|
SG120300A1 true SG120300A1 (en) | 2006-03-28 |
Family
ID=34982028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200505493A SG120300A1 (en) | 2004-08-27 | 2005-08-26 | System and method for reducing disturbances causedby movement in an immersion lithography system |
Country Status (7)
Country | Link |
---|---|
US (3) | US20060044533A1 (ko) |
EP (1) | EP1630616A3 (ko) |
JP (1) | JP4355691B2 (ko) |
KR (1) | KR100728844B1 (ko) |
CN (1) | CN100485528C (ko) |
SG (1) | SG120300A1 (ko) |
TW (1) | TWI308675B (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100965330B1 (ko) | 2003-12-15 | 2010-06-22 | 칼 짜이스 에스엠티 아게 | 적어도 한 개의 액체 렌즈를 가진 마이크로리소그래피 투사대물렌즈로서의 대물렌즈 |
CN100592210C (zh) | 2004-02-13 | 2010-02-24 | 卡尔蔡司Smt股份公司 | 微平版印刷投影曝光装置的投影物镜 |
US20060044533A1 (en) * | 2004-08-27 | 2006-03-02 | Asmlholding N.V. | System and method for reducing disturbances caused by movement in an immersion lithography system |
WO2006045748A2 (en) * | 2004-10-22 | 2006-05-04 | Carl Zeiss Smt Ag | Projection exposure apparatus for microlithography |
JP2007194484A (ja) * | 2006-01-20 | 2007-08-02 | Toshiba Corp | 液浸露光方法 |
CN100456138C (zh) * | 2006-06-13 | 2009-01-28 | 上海微电子装备有限公司 | 浸没式光刻机浸液流场维持系统 |
KR101509553B1 (ko) * | 2007-11-08 | 2015-04-06 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 투영 장치 및 섭동 인자들을 보상하는 방법 |
CN103513324A (zh) * | 2012-06-25 | 2014-01-15 | 鸿富锦精密工业(深圳)有限公司 | 光纤装置 |
CN107093564B (zh) * | 2016-02-18 | 2021-01-26 | 中芯国际集成电路制造(上海)有限公司 | 一种全纵深高分辨在线实时气泡监控装置及监控方法 |
Citations (2)
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US20050145803A1 (en) * | 2003-12-31 | 2005-07-07 | International Business Machines Corporation | Moving lens for immersion optical lithography |
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US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
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CN101470360B (zh) * | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
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DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
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TWI442694B (zh) * | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
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EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7061578B2 (en) * | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US6844206B1 (en) * | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US20050231695A1 (en) * | 2004-04-15 | 2005-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for immersion lithography using high PH immersion fluid |
US7477403B2 (en) * | 2004-05-27 | 2009-01-13 | Asml Netherlands B.V. | Optical position assessment apparatus and method |
US20060044533A1 (en) * | 2004-08-27 | 2006-03-02 | Asmlholding N.V. | System and method for reducing disturbances caused by movement in an immersion lithography system |
-
2004
- 2004-08-27 US US10/927,394 patent/US20060044533A1/en not_active Abandoned
-
2005
- 2005-08-15 TW TW094127753A patent/TWI308675B/zh active
- 2005-08-24 EP EP05018430A patent/EP1630616A3/en not_active Withdrawn
- 2005-08-26 CN CNB2005100967186A patent/CN100485528C/zh not_active Expired - Fee Related
- 2005-08-26 KR KR1020050078892A patent/KR100728844B1/ko not_active IP Right Cessation
- 2005-08-26 SG SG200505493A patent/SG120300A1/en unknown
- 2005-08-29 JP JP2005248267A patent/JP4355691B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-29 US US11/693,517 patent/US20070165200A1/en not_active Abandoned
- 2007-03-29 US US11/693,525 patent/US20070165201A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1477856A1 (en) * | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050145803A1 (en) * | 2003-12-31 | 2005-07-07 | International Business Machines Corporation | Moving lens for immersion optical lithography |
Also Published As
Publication number | Publication date |
---|---|
US20060044533A1 (en) | 2006-03-02 |
EP1630616A3 (en) | 2007-10-31 |
TW200608155A (en) | 2006-03-01 |
JP4355691B2 (ja) | 2009-11-04 |
US20070165200A1 (en) | 2007-07-19 |
CN1740916A (zh) | 2006-03-01 |
TWI308675B (en) | 2009-04-11 |
US20070165201A1 (en) | 2007-07-19 |
KR100728844B1 (ko) | 2007-06-14 |
JP2006066921A (ja) | 2006-03-09 |
CN100485528C (zh) | 2009-05-06 |
EP1630616A2 (en) | 2006-03-01 |
KR20060050711A (ko) | 2006-05-19 |
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