SG118299A1 - Integrated circuit structure and method of fabrication - Google Patents
Integrated circuit structure and method of fabricationInfo
- Publication number
- SG118299A1 SG118299A1 SG200407626A SG200407626A SG118299A1 SG 118299 A1 SG118299 A1 SG 118299A1 SG 200407626 A SG200407626 A SG 200407626A SG 200407626 A SG200407626 A SG 200407626A SG 118299 A1 SG118299 A1 SG 118299A1
- Authority
- SG
- Singapore
- Prior art keywords
- fabrication
- integrated circuit
- circuit structure
- integrated
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/877,441 US7271431B2 (en) | 2004-06-25 | 2004-06-25 | Integrated circuit structure and method of fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
SG118299A1 true SG118299A1 (en) | 2006-01-27 |
Family
ID=35506439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200407626A SG118299A1 (en) | 2004-06-25 | 2004-12-22 | Integrated circuit structure and method of fabrication |
Country Status (4)
Country | Link |
---|---|
US (1) | US7271431B2 (zh) |
CN (1) | CN100449757C (zh) |
SG (1) | SG118299A1 (zh) |
TW (1) | TWI240375B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060194400A1 (en) * | 2005-01-21 | 2006-08-31 | Cooper James A | Method for fabricating a semiconductor device |
KR100928504B1 (ko) * | 2007-10-19 | 2009-11-26 | 주식회사 동부하이텍 | 반도체 소자 및 반도체 소자의 제조방법 |
US8143137B2 (en) * | 2010-02-17 | 2012-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate |
KR101137931B1 (ko) * | 2010-03-03 | 2012-05-09 | 에스케이하이닉스 주식회사 | 반도체 장치의 핀 캐패시터 및 그 제조방법 |
US9048261B2 (en) * | 2011-08-04 | 2015-06-02 | International Business Machines Corporation | Fabrication of field-effect transistors with atomic layer doping |
CN102347268B (zh) * | 2011-10-28 | 2015-07-22 | 上海华虹宏力半导体制造有限公司 | 半导体器件的制作方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100510232B1 (ko) * | 1996-02-21 | 2005-10-27 | 텍사스 인스트루먼츠 인코포레이티드 | 반도체장치에서리필층두께의불균일성을줄이는방법 |
JPH1027799A (ja) * | 1996-04-22 | 1998-01-27 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3466874B2 (ja) * | 1997-06-11 | 2003-11-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH11154675A (ja) * | 1997-11-20 | 1999-06-08 | Toshiba Corp | 半導体装置及びその製造方法 |
US6146978A (en) * | 1998-05-06 | 2000-11-14 | Advanced Micro Devices, Inc. | Integrated circuit having an interlevel interconnect coupled to a source/drain region(s) with source/drain region(s) boundary overlap and reduced parasitic capacitance |
US6303484B1 (en) * | 2000-01-12 | 2001-10-16 | United Microelectronics Corp. | Method of manufacturing dummy pattern |
US6355524B1 (en) * | 2000-08-15 | 2002-03-12 | Mosel Vitelic, Inc. | Nonvolatile memory structures and fabrication methods |
US6559055B2 (en) * | 2000-08-15 | 2003-05-06 | Mosel Vitelic, Inc. | Dummy structures that protect circuit elements during polishing |
JP2002134632A (ja) * | 2000-10-20 | 2002-05-10 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6406975B1 (en) * | 2000-11-27 | 2002-06-18 | Chartered Semiconductor Manufacturing Inc. | Method for fabricating an air gap shallow trench isolation (STI) structure |
US6506673B2 (en) * | 2001-06-11 | 2003-01-14 | Agere Systems Guardian Corp. | Method of forming a reverse gate structure with a spin on glass process |
US20030020086A1 (en) * | 2001-07-25 | 2003-01-30 | Motorola, Inc. | Tuned delay components for an integrated circuit |
JP2004072063A (ja) * | 2002-06-10 | 2004-03-04 | Nec Electronics Corp | 半導体装置及びその製造方法 |
-
2004
- 2004-06-25 US US10/877,441 patent/US7271431B2/en not_active Expired - Fee Related
- 2004-11-26 TW TW093136664A patent/TWI240375B/zh not_active IP Right Cessation
- 2004-12-22 SG SG200407626A patent/SG118299A1/en unknown
-
2005
- 2005-06-23 CN CNB2005100795993A patent/CN100449757C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050287779A1 (en) | 2005-12-29 |
TWI240375B (en) | 2005-09-21 |
US7271431B2 (en) | 2007-09-18 |
TW200601496A (en) | 2006-01-01 |
CN100449757C (zh) | 2009-01-07 |
CN1728383A (zh) | 2006-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI371059B (en) | Circuit structure and fabrication method thereof | |
GB2429677B (en) | Structurally integrated circuit and associated method | |
TWI367566B (en) | Structurally-enhanced integrated circuit package and method of manufacture | |
TWI368241B (en) | Signal-powered integrated circuit and method of powering an integrated circuit | |
GB2430805B (en) | U-gate transistors and methods of fabrication | |
GB0419919D0 (en) | Power semiconductor and method of fabrication | |
GB2415294B (en) | Laminated electronic part and its manufacturing method | |
TWI318795B (en) | Sectional field effect devices and method of fabrication | |
EP1796149A4 (en) | QUARTZ CLAMPING DEVICE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT | |
SG114787A1 (en) | Semiconductor device and manufacturing method of the same | |
EP1768255A4 (en) | ELECTRONIC PART AND METHOD OF MANUFACTURING THE SAME | |
EP1644943A4 (en) | ELECTRONIC DEVICE HAVING ROLLING JIG TEMPLATE AND METHODS OF MANUFACTURING THE SAME | |
HK1099124A1 (en) | Connecting structure and connecting method of circuit | |
HK1114464A1 (zh) | 微型變壓器、多層印刷電路及其製造方法 | |
EP1636831A4 (en) | THREE DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREFOR | |
EP1771902A4 (en) | MICROSTRUCTURES AND METHODS OF MAKING | |
TWI341562B (en) | Integrated circuit devices and fabrication methods thereof | |
GB0411358D0 (en) | New silicon structure and method of fabrication thereof | |
EP1581032A4 (en) | ELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
GB0419867D0 (en) | Semiconductor devices and methods of manufacture thereof | |
TWI318433B (en) | Semiconductor device and fabrication method thereof | |
IL181708A0 (en) | Integrated circuit and method for manufacturing | |
EP1923913A4 (en) | Encapsulation of integrated circuits and methods for their production | |
TWI351081B (en) | Electronic component and method of manufacturing same | |
GB2439883B (en) | Integrated circuit and method of manufacture |