SG115658A1 - Device manufacturing method - Google Patents

Device manufacturing method

Info

Publication number
SG115658A1
SG115658A1 SG200401880A SG200401880A SG115658A1 SG 115658 A1 SG115658 A1 SG 115658A1 SG 200401880 A SG200401880 A SG 200401880A SG 200401880 A SG200401880 A SG 200401880A SG 115658 A1 SG115658 A1 SG 115658A1
Authority
SG
Singapore
Prior art keywords
device manufacturing
manufacturing
Prior art date
Application number
SG200401880A
Other languages
English (en)
Inventor
Steven George Hansen
Donis George Flagello
Michel Fransois Huber Klaassen
Winter Laurentius Cornelius De
Edwin Wilhelmus Marie Knols
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG115658A1 publication Critical patent/SG115658A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Liquid Crystal (AREA)
  • Microscoopes, Condenser (AREA)
SG200401880A 2003-04-07 2004-04-05 Device manufacturing method SG115658A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03252182A EP1467253A1 (en) 2003-04-07 2003-04-07 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
SG115658A1 true SG115658A1 (en) 2005-10-28

Family

ID=32865071

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200401880A SG115658A1 (en) 2003-04-07 2004-04-05 Device manufacturing method

Country Status (7)

Country Link
US (2) US20050007573A1 (ja)
EP (1) EP1467253A1 (ja)
JP (1) JP4090449B2 (ja)
KR (1) KR100598643B1 (ja)
CN (1) CN1570770A (ja)
SG (1) SG115658A1 (ja)
TW (1) TWI270748B (ja)

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KR100676576B1 (ko) * 2003-10-28 2007-01-30 주식회사 하이닉스반도체 수동 편광 여과기 및 이의 제조 방법
JP4565916B2 (ja) * 2004-07-23 2010-10-20 三洋電機株式会社 光反応装置
US7619747B2 (en) * 2004-12-17 2009-11-17 Asml Netherlands B.V. Lithographic apparatus, analyzer plate, subassembly, method of measuring a parameter of a projection system and patterning device
JP2006179516A (ja) * 2004-12-20 2006-07-06 Toshiba Corp 露光装置、露光方法及び半導体装置の製造方法
US7517642B2 (en) * 2004-12-30 2009-04-14 Intel Corporation Plane waves to control critical dimension
DE102005003905B4 (de) * 2005-01-27 2007-04-12 Infineon Technologies Ag Anordnung zur Projektion eines Musters in eine Bildebene
JP2006269853A (ja) * 2005-03-25 2006-10-05 Sony Corp 露光装置および露光方法
KR100699111B1 (ko) * 2005-06-09 2007-03-22 동부일렉트로닉스 주식회사 노광용 빛 투과율 설정장치
JP4691594B2 (ja) * 2005-06-13 2011-06-01 エーエスエムエル ネザーランズ ビー．ブイ． パッシブレチクルツール、リソグラフィ装置およびリソグラフィツール内のデバイスをパターニングする方法
US7525642B2 (en) * 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7817250B2 (en) * 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
DE102007025649B4 (de) * 2007-07-21 2011-03-03 X-Fab Semiconductor Foundries Ag Verfahren zum Übertragen einer Epitaxie-Schicht von einer Spender- auf eine Systemscheibe der Mikrosystemtechnik
DE102007055063A1 (de) * 2007-11-16 2009-05-28 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
FR2955218B1 (fr) 2010-01-08 2012-02-10 St Microelectronics Sa Procede et dispositif de controle de la frequence d'un signal d'horloge d'un circuit integre
US8609302B2 (en) 2011-08-22 2013-12-17 Micron Technology, Inc. Lithography methods, methods for forming patterning tools and patterning tools
CN104220931B (zh) * 2012-03-29 2016-10-12 卡尔蔡司Smt有限责任公司 补偿微光刻投射曝光系统的通道缺陷的设备及方法
KR102632562B1 (ko) * 2018-08-22 2024-02-02 삼성전자주식회사 Si 기반 검사 장치와 검사 방법, 및 그 검사 방법을 포함한 반도체 소자 제조방법

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Also Published As

Publication number Publication date
TW200506510A (en) 2005-02-16
US20080030708A1 (en) 2008-02-07
KR100598643B1 (ko) 2006-07-07
TWI270748B (en) 2007-01-11
CN1570770A (zh) 2005-01-26
EP1467253A1 (en) 2004-10-13
JP2004343079A (ja) 2004-12-02
JP4090449B2 (ja) 2008-05-28
US20050007573A1 (en) 2005-01-13
KR20040087928A (ko) 2004-10-15

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