SG11202112702XA - Method for depositing an epitaxial layer on a front side of a wafer and device for carrying out the method - Google Patents

Method for depositing an epitaxial layer on a front side of a wafer and device for carrying out the method

Info

Publication number
SG11202112702XA
SG11202112702XA SG11202112702XA SG11202112702XA SG11202112702XA SG 11202112702X A SG11202112702X A SG 11202112702XA SG 11202112702X A SG11202112702X A SG 11202112702XA SG 11202112702X A SG11202112702X A SG 11202112702XA SG 11202112702X A SG11202112702X A SG 11202112702XA
Authority
SG
Singapore
Prior art keywords
depositing
wafer
carrying
front side
epitaxial layer
Prior art date
Application number
SG11202112702XA
Inventor
Jörg Haberecht
Stephan Heinrich
Reinhard Schauer
Rene Stein
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11202112702XA publication Critical patent/SG11202112702XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
SG11202112702XA 2019-05-28 2020-04-29 Method for depositing an epitaxial layer on a front side of a wafer and device for carrying out the method SG11202112702XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019207772.2A DE102019207772A1 (en) 2019-05-28 2019-05-28 Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
PCT/EP2020/061882 WO2020239347A1 (en) 2019-05-28 2020-04-29 Method for depositing an epitaxial layer on a front side of a semiconductor wafer, and device for carrying out the method

Publications (1)

Publication Number Publication Date
SG11202112702XA true SG11202112702XA (en) 2021-12-30

Family

ID=70476237

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202112702XA SG11202112702XA (en) 2019-05-28 2020-04-29 Method for depositing an epitaxial layer on a front side of a wafer and device for carrying out the method

Country Status (9)

Country Link
EP (1) EP3976853A1 (en)
JP (1) JP2022534935A (en)
KR (1) KR20220006604A (en)
CN (3) CN113950541A (en)
DE (1) DE102019207772A1 (en)
IL (1) IL288289A (en)
SG (1) SG11202112702XA (en)
TW (1) TWI751564B (en)
WO (1) WO2020239347A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019207772A1 (en) * 2019-05-28 2020-12-03 Siltronic Ag Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method

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US20050211385A1 (en) * 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
JP2003007806A (en) * 2001-06-21 2003-01-10 Tokyo Electron Ltd Wafer supporting method and mechanism for mounting wafer and semiconductor manufacturing apparatus
JP2005207997A (en) * 2004-01-26 2005-08-04 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP4377396B2 (en) * 2005-07-29 2009-12-02 株式会社ニューフレアテクノロジー Vapor growth equipment
TWI327339B (en) * 2005-07-29 2010-07-11 Nuflare Technology Inc Vapor phase growing apparatus and vapor phase growing method
TW200802552A (en) 2006-03-30 2008-01-01 Sumco Techxiv Corp Method of manufacturing epitaxial silicon wafer and apparatus thereof
JP4868522B2 (en) * 2006-03-30 2012-02-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Epitaxial wafer manufacturing method and manufacturing apparatus
DE102006055038B4 (en) 2006-11-22 2012-12-27 Siltronic Ag An epitaxated semiconductor wafer and apparatus and method for producing an epitaxied semiconductor wafer
JP2009088088A (en) * 2007-09-28 2009-04-23 Sharp Corp Substrate treating device and method
JP5834632B2 (en) * 2011-08-30 2015-12-24 株式会社Sumco Susceptor, vapor phase growth apparatus using the susceptor, and epitaxial wafer manufacturing method
CN202230996U (en) * 2011-09-01 2012-05-23 中微半导体设备(上海)有限公司 Electrostatic chuck capable of carrying out regional temperature control
JP2013138114A (en) * 2011-12-28 2013-07-11 Applied Materials Inc Semiconductor manufacturing apparatus and susceptor supporting member
US9401271B2 (en) * 2012-04-19 2016-07-26 Sunedison Semiconductor Limited (Uen201334164H) Susceptor assemblies for supporting wafers in a reactor apparatus
JP6035982B2 (en) 2012-08-09 2016-11-30 株式会社Sumco Epitaxial silicon wafer manufacturing method and epitaxial silicon wafer
US9123765B2 (en) 2013-03-11 2015-09-01 Applied Materials, Inc. Susceptor support shaft for improved wafer temperature uniformity and process repeatability
CN104064490A (en) * 2013-03-22 2014-09-24 株式会社东芝 Semiconductor manufacturing apparatus and semiconductor wafer holder
JP2014212244A (en) * 2013-04-19 2014-11-13 住友電気工業株式会社 Substrate-fixing jig and epitaxial substrate
TWI734668B (en) * 2014-06-23 2021-08-01 美商應用材料股份有限公司 Substrate thermal control in an epi chamber
DE102015220924B4 (en) * 2015-10-27 2018-09-27 Siltronic Ag Susceptor for holding a semiconductor wafer with orientation notch, method for depositing a layer on a semiconductor wafer and semiconductor wafer
TWI671429B (en) * 2016-07-02 2019-09-11 美商應用材料股份有限公司 Device to increase deposition uniformity in spatial ald processing chamber
CN205821452U (en) * 2016-07-11 2016-12-21 中山德华芯片技术有限公司 A kind of sectional wafer carrier
DE102017206671A1 (en) * 2017-04-20 2018-10-25 Siltronic Ag A susceptor for holding a wafer having an orientation notch during deposition of a film on a front side of the wafer and methods for depositing the film using the susceptor
CN107227448B (en) * 2017-06-30 2023-10-13 北京北方华创微电子装备有限公司 Susceptor and physical vapor deposition apparatus
DE102017222279A1 (en) * 2017-12-08 2019-06-13 Siltronic Ag Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
DE102019207772A1 (en) * 2019-05-28 2020-12-03 Siltronic Ag Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method

Also Published As

Publication number Publication date
TWI751564B (en) 2022-01-01
JP2022534935A (en) 2022-08-04
WO2020239347A1 (en) 2020-12-03
EP3976853A1 (en) 2022-04-06
DE102019207772A1 (en) 2020-12-03
US20220267926A1 (en) 2022-08-25
KR20220006604A (en) 2022-01-17
TW202044354A (en) 2020-12-01
CN112011826A (en) 2020-12-01
CN113950541A (en) 2022-01-18
CN213538160U (en) 2021-06-25
CN112011826B (en) 2023-10-13
IL288289A (en) 2022-01-01

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