SG11202112039QA - Extreme ultraviolet mask absorber materials - Google Patents

Extreme ultraviolet mask absorber materials

Info

Publication number
SG11202112039QA
SG11202112039QA SG11202112039QA SG11202112039QA SG11202112039QA SG 11202112039Q A SG11202112039Q A SG 11202112039QA SG 11202112039Q A SG11202112039Q A SG 11202112039QA SG 11202112039Q A SG11202112039Q A SG 11202112039QA SG 11202112039Q A SG11202112039Q A SG 11202112039QA
Authority
SG
Singapore
Prior art keywords
extreme ultraviolet
absorber materials
ultraviolet mask
mask absorber
materials
Prior art date
Application number
SG11202112039QA
Inventor
Shuwei Liu
Vibhu Jindal
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202112039QA publication Critical patent/SG11202112039QA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067—Borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
SG11202112039QA 2019-05-22 2020-05-20 Extreme ultraviolet mask absorber materials SG11202112039QA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962851398P 2019-05-22 2019-05-22
US202063011639P 2020-04-17 2020-04-17
US16/877,955 US11275304B2 (en) 2019-05-22 2020-05-19 Extreme ultraviolet mask absorber matertals
PCT/US2020/033724 WO2020236888A1 (en) 2019-05-22 2020-05-20 Extreme ultraviolet mask absorber materials

Publications (1)

Publication Number Publication Date
SG11202112039QA true SG11202112039QA (en) 2021-12-30

Family

ID=73456926

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202112039QA SG11202112039QA (en) 2019-05-22 2020-05-20 Extreme ultraviolet mask absorber materials

Country Status (6)

Country Link
US (1) US11275304B2 (en)
JP (1) JP2022533662A (en)
KR (1) KR20210158408A (en)
SG (1) SG11202112039QA (en)
TW (1) TW202111420A (en)
WO (1) WO2020236888A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI833171B (en) * 2021-03-29 2024-02-21 日商Ｈｏｙａ股份有限公司 Photomask substrate, photomask manufacturing method and display device manufacturing method
US11815804B2 (en) 2021-04-22 2023-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. EUV mask blank and method of making EUV mask blank

Family Cites Families (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4410407A (en) 1981-12-22 1983-10-18 Raytheon Company Sputtering apparatus and methods
JPS6376325A (en) 1987-06-30 1988-04-06 Agency Of Ind Science & Technol X-ray absorber film of mask for x-ray lithography
JP3078163B2 (en) 1993-10-15 2000-08-21 キヤノン株式会社 Lithographic reflective mask and reduction projection exposure apparatus
DE19508405A1 (en) 1995-03-09 1996-09-12 Leybold Ag Cathode arrangement for a device for atomizing a target pair
US6323131B1 (en) 1998-06-13 2001-11-27 Agere Systems Guardian Corp. Passivated copper surfaces
US6132566A (en) 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
JP3529676B2 (en) 1999-09-16 2004-05-24 株式会社東芝 Semiconductor manufacturing apparatus and semiconductor device manufacturing method
US6562522B1 (en) 1999-10-29 2003-05-13 Intel Corporation Photomasking
US6583068B2 (en) 2001-03-30 2003-06-24 Intel Corporation Enhanced inspection of extreme ultraviolet mask
US6396900B1 (en) 2001-05-01 2002-05-28 The Regents Of The University Of California Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application
DE10155112B4 (en) 2001-11-09 2006-02-02 Infineon Technologies Ag Reflection mask for EUV lithography and manufacturing method therefor
EP1333323A3 (en) 2002-02-01 2004-10-06 Nikon Corporation Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same
US7390596B2 (en) 2002-04-11 2008-06-24 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
US6835503B2 (en) 2002-04-12 2004-12-28 Micron Technology, Inc. Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
JP2003315977A (en) 2002-04-25 2003-11-06 Hoya Corp Method for producing lithography mask blank and apparatus therefor
US6641899B1 (en) 2002-11-05 2003-11-04 International Business Machines Corporation Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same
US6913706B2 (en) 2002-12-28 2005-07-05 Intel Corporation Double-metal EUV mask absorber
US6908713B2 (en) 2003-02-05 2005-06-21 Intel Corporation EUV mask blank defect mitigation
JP2004273794A (en) 2003-03-10 2004-09-30 Mitsubishi Electric Corp Manufacturing method of x-ray mask and semiconductor device using x-ray mask manufactured by the same
US7033739B2 (en) 2003-04-24 2006-04-25 Intel Corporation Active hardmask for lithographic patterning
US7282307B2 (en) 2004-06-18 2007-10-16 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same
US20060024589A1 (en) 2004-07-28 2006-02-02 Siegfried Schwarzl Passivation of multi-layer mirror for extreme ultraviolet lithography
US7407729B2 (en) 2004-08-05 2008-08-05 Infineon Technologies Ag EUV magnetic contrast lithography mask and manufacture thereof
JPWO2006030627A1 (en) 2004-09-17 2008-05-08 旭硝子株式会社 Reflective mask blanks for EUV lithography and manufacturing method thereof
US8575021B2 (en) 2004-11-22 2013-11-05 Intermolecular, Inc. Substrate processing including a masking layer
FR2884965B1 (en) 2005-04-26 2007-06-08 Commissariat Energie Atomique ADJUSTABLE MASK WHITE STRUCTURE FOR EUV MASK WITH PHASE SHIFT
US7432201B2 (en) 2005-07-19 2008-10-07 Applied Materials, Inc. Hybrid PVD-CVD system
KR20070036519A (en) 2005-09-29 2007-04-03 주식회사 하이닉스반도체 Reflective mask
JP4652946B2 (en) 2005-10-19 2011-03-16 Ｈｏｙａ株式会社 Reflective mask blank substrate manufacturing method, reflective mask blank manufacturing method, and reflective mask manufacturing method
US20070090084A1 (en) 2005-10-20 2007-04-26 Pei-Yang Yan Reclaim method for extreme ultraviolet lithography mask blank and associated products
JP4926523B2 (en) 2006-03-31 2012-05-09 Ｈｏｙａ株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
KR20080001023A (en) 2006-06-29 2008-01-03 주식회사 에스앤에스텍 Reflective type euv blank mask and photomask and manufacturing method thereof
TWI427334B (en) 2007-02-05 2014-02-21 Zeiss Carl Smt Gmbh Reflective optical element for euv lithography devices
KR100879139B1 (en) 2007-08-31 2009-01-19 한양대학교 산학협력단 Phase shift mask and manufacturing method thereof
JP5194888B2 (en) 2007-09-27 2013-05-08 凸版印刷株式会社 REFLECTIVE PHOTOMASK BLANK AND MANUFACTURING METHOD THEREOF, REFLECTIVE PHOTOMASK AND MANUFACTURING METHOD THEREOF
JP2011505318A (en) 2007-11-30 2011-02-24 コーニング インコーポレイテッド Low expansion glass material with low expansion coefficient gradient
KR100972863B1 (en) 2008-04-22 2010-07-28 주식회사 하이닉스반도체 Extreme ultra violet lithogrphy mask and method for fabricating the same
CN102089860B (en) 2008-07-14 2014-03-12 旭硝子株式会社 Reflective mask blank for EUV lithography and reflective mask for EUV lithography
DE102008042212A1 (en) 2008-09-19 2010-04-01 Carl Zeiss Smt Ag Reflective optical element and method for its production
CN102216489B (en) 2008-10-30 2014-03-12 佳能安内华股份有限公司 Multilayer film sputtering device and multilayer film formation method
US8587662B1 (en) 2008-11-06 2013-11-19 Target Brands, Inc. Theft trend analysis and response
KR101095681B1 (en) 2008-12-26 2011-12-19 주식회사 하이닉스반도체 Photomask for extreme ultraviolet lithography and method for fabricating the same
EP2264460A1 (en) 2009-06-18 2010-12-22 Nxp B.V. Device having self-assembled-monolayer
JP5766393B2 (en) 2009-07-23 2015-08-19 株式会社東芝 Reflective exposure mask and method of manufacturing semiconductor device
WO2011108470A1 (en) 2010-03-02 2011-09-09 旭硝子株式会社 Reflection-type mask blank for euv lithography and method for producing the same
KR101625382B1 (en) 2010-04-29 2016-05-30 (주)에스앤에스텍 Reflective Type EUV Blankmask, Photomask and Its Manufacturing Method
KR101727783B1 (en) 2010-06-15 2017-04-17 칼 짜이스 에스엠테 게엠베하 Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask
TWI554630B (en) 2010-07-02 2016-10-21 應用材料股份有限公司 Deposition apparatus and methods to reduce deposition asymmetry
US8764995B2 (en) 2010-08-17 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
CN103210515B (en) 2010-09-15 2015-06-03 株式会社理光 Electromechanical transducing device and manufacturing method thereof, and liquid droplet discharging head and liquid droplet discharging apparatus
JP6013720B2 (en) 2010-11-22 2016-10-25 芝浦メカトロニクス株式会社 Reflective mask manufacturing method and reflective mask manufacturing apparatus
US8426085B2 (en) 2010-12-02 2013-04-23 Intermolecular, Inc. Method and apparatus for EUV mask having diffusion barrier
CN103858209B (en) 2011-09-28 2017-06-06 凸版印刷株式会社 Reflection-type exposure mask base and reflection-type exposure mask
KR20140099226A (en) 2011-11-25 2014-08-11 아사히 가라스 가부시키가이샤 Reflective mask blank for euv lithography and production method thereof
JP2013120868A (en) 2011-12-08 2013-06-17 Dainippon Printing Co Ltd Reflective mask blank, reflective mask, and manufacturing method therefor
US8691476B2 (en) 2011-12-16 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and method for forming the same
KR20130085774A (en) 2012-01-20 2013-07-30 에스케이하이닉스 주식회사 Euv mask
WO2013152921A1 (en) 2012-04-12 2013-10-17 Asml Netherlands B.V. Pellicle, reticle assembly and lithographic apparatus
US8658333B2 (en) 2012-06-04 2014-02-25 Nanya Technology Corporation Reflective mask
US8765331B2 (en) 2012-08-17 2014-07-01 International Business Machines Corporation Reducing edge die reflectivity in extreme ultraviolet lithography
US8932785B2 (en) 2012-10-16 2015-01-13 Advanced Mask Technology Center Gmbh & Co. Kg EUV mask set and methods of manufacturing EUV masks and integrated circuits
US9146458B2 (en) 2013-01-09 2015-09-29 Kabushiki Kaisha Toshiba EUV mask
US9442387B2 (en) 2013-02-01 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process
US9812303B2 (en) 2013-03-01 2017-11-07 Applied Materials, Inc. Configurable variable position closed track magnetron
US9135499B2 (en) 2013-03-05 2015-09-15 Tyco Fire & Security Gmbh Predictive theft notification for the prevention of theft
US20140254001A1 (en) 2013-03-07 2014-09-11 Globalfoundries Inc. Fabry-perot thin absorber for euv reticle and a method of making
US9298081B2 (en) 2013-03-08 2016-03-29 Globalfoundries Inc. Scattering enhanced thin absorber for EUV reticle and a method of making
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9310675B2 (en) 2013-03-15 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
JP6408790B2 (en) 2013-05-31 2018-10-17 Hoya株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, MANUFACTURING METHOD THEREOF, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
US9091947B2 (en) 2013-07-19 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof
US9134604B2 (en) 2013-08-30 2015-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet (EUV) mask and method of fabricating the EUV mask
KR101567057B1 (en) 2013-11-15 2015-11-09 주식회사 에스앤에스텍 Blankmask for Extreme Ultra-Violet Lithography and Photomask using the same
US9261774B2 (en) 2013-11-22 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity
JP6301127B2 (en) 2013-12-25 2018-03-28 Hoya株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
US9329597B2 (en) 2014-01-17 2016-05-03 Knightscope, Inc. Autonomous data machines and systems
US10279488B2 (en) 2014-01-17 2019-05-07 Knightscope, Inc. Autonomous data machines and systems
US9195132B2 (en) 2014-01-30 2015-11-24 Globalfoundries Inc. Mask structures and methods of manufacturing
US11183375B2 (en) 2014-03-31 2021-11-23 Applied Materials, Inc. Deposition system with multi-cathode and method of manufacture thereof
KR20160002332A (en) 2014-06-30 2016-01-07 주식회사 에스앤에스텍 Blankmask for Extreme Ultra-Violet Lithography and Photomask using the same
US9581889B2 (en) 2014-07-11 2017-02-28 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
US9690016B2 (en) 2014-07-11 2017-06-27 Applied Materials, Inc. Extreme ultraviolet reflective element with amorphous layers and method of manufacturing thereof
US9581890B2 (en) 2014-07-11 2017-02-28 Applied Materials, Inc. Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
US9739913B2 (en) 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
US9612522B2 (en) 2014-07-11 2017-04-04 Applied Materials, Inc. Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor
KR102499220B1 (en) 2014-09-17 2023-02-13 호야 가부시키가이샤 Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device
US9709884B2 (en) 2014-11-26 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and manufacturing method by using the same
US9471866B2 (en) 2015-01-05 2016-10-18 Tyco Fire and Securtiy GmbH Anti-theft system used for customer service
US9588440B2 (en) 2015-02-12 2017-03-07 International Business Machines Corporation Method for monitoring focus in EUV lithography
US9551924B2 (en) 2015-02-12 2017-01-24 International Business Machines Corporation Structure and method for fixing phase effects on EUV mask
KR101726045B1 (en) 2015-06-04 2017-04-13 한양대학교 산학협력단 Mask for extreme ultraviolet lithography process and method of fabricating the same
TWI694304B (en) 2015-06-08 2020-05-21 日商Ａｇｃ股份有限公司 Reflective mask blank for euv lithography
TWI623805B (en) 2015-08-17 2018-05-11 Ｓ＆Ｓ技術股份有限公司 Blankmask for extreme ultra-violet lithography and photomask using the same
KR101829604B1 (en) 2015-08-17 2018-03-29 주식회사 에스앤에스텍 Photomask for Extreme Ultra-Violet Lithography and Method for manufacturing the same
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US20170092533A1 (en) 2015-09-29 2017-03-30 Applied Materials, Inc. Selective silicon dioxide deposition using phosphonic acid self assembled monolayers as nucleation inhibitor
US10163629B2 (en) 2015-11-16 2018-12-25 Applied Materials, Inc. Low vapor pressure aerosol-assisted CVD
US10431440B2 (en) 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
US9791771B2 (en) 2016-02-11 2017-10-17 Globalfoundries Inc. Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
WO2017151639A1 (en) 2016-03-03 2017-09-08 Applied Materials, Inc. Improved self-assembled monolayer blocking with intermittent air-water exposure
JP6739960B2 (en) 2016-03-28 2020-08-12 Hoya株式会社 Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
US10061191B2 (en) 2016-06-01 2018-08-28 Taiwan Semiconductor Manufacturing Co., Ltd. High durability extreme ultraviolet photomask
TWI811037B (en) 2016-07-27 2023-08-01 美商應用材料股份有限公司 Extreme ultraviolet mask blank with multilayer absorber and method of manufacture
TWI821984B (en) 2016-07-27 2023-11-11 美商應用材料股份有限公司 Extreme ultraviolet mask blank with alloy absorber and method of manufacturing extreme ultraviolet mask blank
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11011357B2 (en) 2017-02-21 2021-05-18 Applied Materials, Inc. Methods and apparatus for multi-cathode substrate processing
KR20190117745A (en) 2017-03-02 2019-10-16 호야 가부시키가이샤 Reflective mask blanks, reflective masks and methods for manufacturing the same, and methods for manufacturing semiconductor devices
US10847368B2 (en) 2017-04-07 2020-11-24 Applied Materials, Inc. EUV resist patterning using pulsed plasma
US10704139B2 (en) 2017-04-07 2020-07-07 Applied Materials, Inc. Plasma chamber target for reducing defects in workpiece during dielectric sputtering
KR20180127197A (en) 2017-05-18 2018-11-28 주식회사 에스앤에스텍 Blankmask for Extreme Ultra-Violet Lithography and Photomask using the same
JP6729508B2 (en) 2017-06-29 2020-07-22 信越化学工業株式会社 Photomask blank and photomask
JP6863169B2 (en) 2017-08-15 2021-04-21 Ａｇｃ株式会社 Reflective mask blank, and reflective mask
EP3454119B1 (en) 2017-09-09 2023-12-27 IMEC vzw Euv absorbing alloys
US10504705B2 (en) 2017-09-15 2019-12-10 Applied Materials, Inc. Physical vapor deposition chamber with static magnet assembly and methods of sputtering
US10890842B2 (en) 2017-09-21 2021-01-12 AGC Inc. Reflective mask blank, reflective mask, and process for producing reflective mask blank
US10802393B2 (en) 2017-10-16 2020-10-13 Globalfoundries Inc. Extreme ultraviolet (EUV) lithography mask
KR102402767B1 (en) 2017-12-21 2022-05-26 삼성전자주식회사 EUV mask blank, photomask manufactured by using the EUV mask blank, lithography apparatus using the photomask and method of fabricating semiconductor device using the photomask
US20190384156A1 (en) 2018-06-13 2019-12-19 AGC Inc. Reflective mask blank, reflective mask, and method of manufacturing reflective mask blank
TWI821300B (en) 2018-06-19 2023-11-11 美商應用材料股份有限公司 Deposition system with shield mount
JP6636581B2 (en) 2018-08-01 2020-01-29 Hoya株式会社 Reflective mask blank, method for manufacturing reflective mask, and method for manufacturing semiconductor device
KR20200020608A (en) 2018-08-16 2020-02-26 에이에스엠 아이피 홀딩 비.브이. Solid source sublimator
US11366379B2 (en) 2019-05-22 2022-06-21 Applied Materials Inc. Extreme ultraviolet mask with embedded absorber layer
TW202104617A (en) 2019-05-22 2021-02-01 美商應用材料股份有限公司 Extreme ultraviolet mask absorber materials

Also Published As

Publication number Publication date
US11275304B2 (en) 2022-03-15
KR20210158408A (en) 2021-12-30
WO2020236888A1 (en) 2020-11-26
US20200371428A1 (en) 2020-11-26
JP2022533662A (en) 2022-07-25
TW202111420A (en) 2021-03-16

Similar Documents

Publication Publication Date Title
SG11202107349VA (en) Extreme ultraviolet mask absorber materials
SG11202100032YA (en) Extreme ultraviolet mask absorber materials
SG11202107351XA (en) Extreme ultraviolet mask absorber materials
CA186478S (en) Weighted sleep mask
SG11202103169RA (en) Ta-cu alloy material for extreme ultraviolet mask absorber
CA188789S (en) Odor absorber
EP3632247A4 (en) Mask
EP3831232A4 (en) Mask
CA190437S (en) Face mask
GB2572800B (en) Breathing mask
GB201710898D0 (en) Anti-pollution mask
IL289774A (en) Pellicle membrane
SG11202112039QA (en) Extreme ultraviolet mask absorber materials
EP3859217C0 (en) Dehumidifier
GB2569593B (en) Exposure ratio control
SG11202107350UA (en) Extreme ultraviolet mask absorber materials
EP3846911A4 (en) Mask
SG11202103168TA (en) Extreme ultraviolet mask with backside coating
CA190436S (en) Face mask
GB201813128D0 (en) Biliary organoids
EP4117793A4 (en) Mask
EP4053464C0 (en) Dehumidifier
GB201917969D0 (en) Malar mask
PT3914744T (en) Covetic materials
CA208804S (en) Mask