SG11202103168TA - Extreme ultraviolet mask with backside coating - Google Patents

Extreme ultraviolet mask with backside coating

Info

Publication number
SG11202103168TA
SG11202103168TA SG11202103168TA SG11202103168TA SG11202103168TA SG 11202103168T A SG11202103168T A SG 11202103168TA SG 11202103168T A SG11202103168T A SG 11202103168TA SG 11202103168T A SG11202103168T A SG 11202103168TA SG 11202103168T A SG11202103168T A SG 11202103168TA
Authority
SG
Singapore
Prior art keywords
extreme ultraviolet
backside coating
ultraviolet mask
mask
backside
Prior art date
Application number
SG11202103168TA
Inventor
Vibhu Jindal
Madhavi R Chandrachood
Vikash Banthia
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202103168TA publication Critical patent/SG11202103168TA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG11202103168TA 2018-10-26 2019-10-25 Extreme ultraviolet mask with backside coating SG11202103168TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862751239P 2018-10-26 2018-10-26
US16/662,742 US11249386B2 (en) 2018-10-26 2019-10-24 Extreme ultraviolet mask with backside coating
PCT/US2019/058012 WO2020086932A1 (en) 2018-10-26 2019-10-25 Extreme ultraviolet mask with backside coating

Publications (1)

Publication Number Publication Date
SG11202103168TA true SG11202103168TA (en) 2021-05-28

Family

ID=70328323

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202103168TA SG11202103168TA (en) 2018-10-26 2019-10-25 Extreme ultraviolet mask with backside coating

Country Status (6)

Country Link
US (1) US11249386B2 (en)
JP (1) JP7288959B2 (en)
KR (1) KR20210066016A (en)
SG (1) SG11202103168TA (en)
TW (1) TWI835896B (en)
WO (1) WO2020086932A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220121101A1 (en) * 2020-10-16 2022-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Absorber materials for extreme ultraviolet mask
WO2023171583A1 (en) * 2022-03-08 2023-09-14 Ａｇｃ株式会社 Reflective mask blank, reflective mask, and manufacturing method therefor
WO2024091683A1 (en) * 2022-10-28 2024-05-02 Applied Materials, Inc. Optical coating for eliminating ghost images in optical metrology tools

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737201B2 (en) 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
JP2002299228A (en) * 2001-04-03 2002-10-11 Nikon Corp Reticle, aligner using the same and exposure method
KR100630728B1 (en) * 2004-12-29 2006-10-02 삼성전자주식회사 Reflection photomask, fabricating method of the same
KR100604938B1 (en) * 2005-05-27 2006-07-28 삼성전자주식회사 Reflection mask for euvl lithography, fabricating method of the same
WO2007013313A1 (en) * 2005-07-26 2007-02-01 Sharp Kabushiki Kaisha Transmissive liquid crystal display
JP2007335625A (en) * 2006-06-15 2007-12-27 Matsushita Electric Ind Co Ltd Solar cell
JP4978626B2 (en) 2006-12-15 2012-07-18 旭硝子株式会社 Reflective mask blank for EUV lithography, and functional film substrate for the mask blank
JP6125772B2 (en) * 2011-09-28 2017-05-10 Hoya株式会社 Reflective mask blank, reflective mask, and method of manufacturing reflective mask
JP2015018918A (en) * 2013-07-10 2015-01-29 キヤノン株式会社 Reflection type mask, exposure method, and method of manufacturing device
KR101567057B1 (en) * 2013-11-15 2015-11-09 주식회사 에스앤에스텍 Blankmask for Extreme Ultra-Violet Lithography and Photomask using the same
JP6361283B2 (en) * 2014-05-23 2018-07-25 凸版印刷株式会社 Reflective mask blank and reflective mask
JP2016009744A (en) * 2014-06-24 2016-01-18 凸版印刷株式会社 Reflective mask and reflective mask blank
US9612522B2 (en) * 2014-07-11 2017-04-04 Applied Materials, Inc. Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor
KR20160016098A (en) * 2014-08-04 2016-02-15 주식회사 에스앤에스텍 Blankmask for Extreme Ultra-Violet Lithography and Photomask using the same
US9766536B2 (en) * 2015-07-17 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mask with multilayer structure and manufacturing method by using the same
JP6743505B2 (en) * 2016-06-17 2020-08-19 凸版印刷株式会社 Reflective mask blank and reflective mask
TWI821984B (en) * 2016-07-27 2023-11-11 美商應用材料股份有限公司 Extreme ultraviolet mask blank with alloy absorber and method of manufacturing extreme ultraviolet mask blank
TWI774375B (en) * 2016-07-27 2022-08-11 美商應用材料股份有限公司 Extreme ultraviolet mask blank with multilayer absorber and method of manufacture
TWI712849B (en) * 2017-02-17 2020-12-11 聯華電子股份有限公司 Extreme ultraviolet mask
JP6861095B2 (en) 2017-03-03 2021-04-21 Hoya株式会社 Method for manufacturing reflective mask blanks, reflective masks and semiconductor devices
KR102402767B1 (en) * 2017-12-21 2022-05-26 삼성전자주식회사 EUV mask blank, photomask manufactured by using the EUV mask blank, lithography apparatus using the photomask and method of fabricating semiconductor device using the photomask
TW202008073A (en) * 2018-07-19 2020-02-16 美商應用材料股份有限公司 Extreme ultraviolet mask absorber materials

Also Published As

Publication number Publication date
JP7288959B2 (en) 2023-06-08
TW202026752A (en) 2020-07-16
US11249386B2 (en) 2022-02-15
TWI835896B (en) 2024-03-21
WO2020086932A1 (en) 2020-04-30
US20200133114A1 (en) 2020-04-30
JP2022505688A (en) 2022-01-14
KR20210066016A (en) 2021-06-04

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