SG11202109135UA - Improved cathode arc source - Google Patents

Improved cathode arc source

Info

Publication number
SG11202109135UA
SG11202109135UA SG11202109135UA SG11202109135UA SG11202109135UA SG 11202109135U A SG11202109135U A SG 11202109135UA SG 11202109135U A SG11202109135U A SG 11202109135UA SG 11202109135U A SG11202109135U A SG 11202109135UA SG 11202109135U A SG11202109135U A SG 11202109135UA
Authority
SG
Singapore
Prior art keywords
arc source
cathode arc
improved cathode
improved
source
Prior art date
Application number
SG11202109135UA
Inventor
Xu Shi
Ming Chu Yang
Kok How Tan
Original Assignee
Nanofilm Tech International Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB1907666.0A external-priority patent/GB201907666D0/en
Application filed by Nanofilm Tech International Limited filed Critical Nanofilm Tech International Limited
Publication of SG11202109135UA publication Critical patent/SG11202109135UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
SG11202109135UA 2019-03-15 2020-03-13 Improved cathode arc source SG11202109135UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19163312 2019-03-15
GBGB1907666.0A GB201907666D0 (en) 2019-05-30 2019-05-30 Improved cathode arc source
PCT/EP2020/056860 WO2020187743A1 (en) 2019-03-15 2020-03-13 Improved cathode arc source

Publications (1)

Publication Number Publication Date
SG11202109135UA true SG11202109135UA (en) 2021-09-29

Family

ID=70050038

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202109135UA SG11202109135UA (en) 2019-03-15 2020-03-13 Improved cathode arc source

Country Status (6)

Country Link
US (1) US11926890B2 (en)
EP (1) EP3938557B1 (en)
JP (1) JP7390396B2 (en)
CN (1) CN111690899B (en)
SG (1) SG11202109135UA (en)
WO (1) WO2020187743A1 (en)

Family Cites Families (30)

* Cited by examiner, † Cited by third party
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JPH04236770A (en) 1991-01-17 1992-08-25 Kobe Steel Ltd Method for controlling arc spot in vacuum arc deposition and vaporization source
BR9507514A (en) * 1994-04-25 1997-09-02 Gillette Co Process for forming a razor blade in a shaving unit and process for applying a hard carbon coating to a blade
GB9503305D0 (en) 1995-02-20 1995-04-12 Univ Nanyang Filtered cathodic arc source
GB9615548D0 (en) 1996-07-24 1996-09-04 Univ Nanyang Cathode arc source and graphite target
GB9722649D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source for metallic and dielectric coatings
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US6929727B2 (en) 1999-04-12 2005-08-16 G & H Technologies, Llc Rectangular cathodic arc source and method of steering an arc spot
US6645354B1 (en) 2000-04-07 2003-11-11 Vladimir I. Gorokhovsky Rectangular cathodic arc source and method of steering an arc spot
EP1576641B8 (en) 2002-12-19 2007-10-17 Oerlikon Trading AG, Trübbach Vacuum arc source comprising a device for generating a magnetic field
US6923891B2 (en) 2003-01-10 2005-08-02 Nanofilm Technologies International Pte Ltd. Copper interconnects
CN1459516A (en) 2003-02-20 2003-12-03 大连理工大学 High vaccum magnetic filtering arc source
US7381311B2 (en) 2003-10-21 2008-06-03 The United States Of America As Represented By The Secretary Of The Air Force Filtered cathodic-arc plasma source
GB2410255A (en) 2004-01-21 2005-07-27 Nanofilm Technologies Int Arc deposition method and apparatus
JP4527432B2 (en) 2004-04-08 2010-08-18 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
JP4548666B2 (en) 2005-08-26 2010-09-22 株式会社不二越 Evaporation source for arc ion plating equipment
JP4859523B2 (en) * 2006-05-09 2012-01-25 スタンレー電気株式会社 Plasma source, film forming apparatus and film manufacturing method
CN101363114B (en) 2007-12-12 2010-06-09 中国科学院金属研究所 Deposition technique of arc ion plating enhanced by magnetic field
CN201158702Y (en) 2008-01-11 2008-12-03 中国科学院金属研究所 Dynamic magnetic controlled arc source device for improving electric arc ion plating deposition technique
US20110177460A1 (en) 2008-06-09 2011-07-21 Nanofilm Technologies International Pte Ltd process for producing an image on a substrate
US20100190036A1 (en) 2009-01-27 2010-07-29 Kyriakos Komvopoulos Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc
GB201016501D0 (en) * 2010-10-01 2010-11-17 Nanofilm Technologies Internat Pte Ltd Filter for removing macro-particles from a plasma beam
UA97584C2 (en) * 2010-11-08 2012-02-27 Национальный Научный Центр "Харьковский Физико-Технический Институт" METHOD For TRANSPORTATION vacuum-arc cathode plasma with FILTERING OF MACROparticles AND DEVICE FOR realization thereof
EP2602354A1 (en) * 2011-12-05 2013-06-12 Pivot a.s. Filtered cathodic vacuum arc deposition apparatus and method
CN102936717B (en) * 2012-11-08 2014-06-11 温州职业技术学院 Compact and efficient cold cathode arc source of quasi diffusion arc
CN108203090B (en) * 2016-12-16 2021-03-26 中国科学院宁波材料技术与工程研究所 Preparation method of graphene
CN206337307U (en) 2016-12-30 2017-07-18 纳峰真空镀膜（上海）有限公司 A kind of large-scale DLC film vacuum coater
CN108456844B (en) 2018-02-07 2019-11-08 中国原子能科学研究院 A method of it being coated with high-purity N i/Cu bilayer target membrane on high-boron-silicon glass
EP3636795A1 (en) 2018-10-09 2020-04-15 Nanofilm Technologies International Pte Ltd Thick, low-stress tetrahedral amorphous carbon coatings
EP3650582A1 (en) 2018-11-08 2020-05-13 Nanofilm Technologies International Pte Ltd Temperature resistant amorphous carbon coatings
EP3650583A1 (en) 2018-11-08 2020-05-13 Nanofilm Technologies International Pte Ltd Ta-c based coatings with improved hardness

Also Published As

Publication number Publication date
EP3938557A1 (en) 2022-01-19
JP2022525349A (en) 2022-05-12
CN111690899A (en) 2020-09-22
EP3938557B1 (en) 2023-09-06
US11926890B2 (en) 2024-03-12
CN111690899B (en) 2023-11-17
EP3938557C0 (en) 2023-09-06
WO2020187743A1 (en) 2020-09-24
JP7390396B2 (en) 2023-12-01
US20220145444A1 (en) 2022-05-12

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