SG11202108235UA - Deposition of carbon doped silicon oxide - Google Patents

Deposition of carbon doped silicon oxide

Info

Publication number
SG11202108235UA
SG11202108235UA SG11202108235UA SG11202108235UA SG11202108235UA SG 11202108235U A SG11202108235U A SG 11202108235UA SG 11202108235U A SG11202108235U A SG 11202108235UA SG 11202108235U A SG11202108235U A SG 11202108235UA SG 11202108235U A SG11202108235U A SG 11202108235UA
Authority
SG
Singapore
Prior art keywords
deposition
silicon oxide
doped silicon
carbon doped
carbon
Prior art date
Application number
SG11202108235UA
Other languages
English (en)
Inventor
Meiliang Wang
Xinjian Lei
Haripin Chandra
Matthew Macdonald
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG11202108235UA publication Critical patent/SG11202108235UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11202108235UA 2019-02-05 2020-02-04 Deposition of carbon doped silicon oxide SG11202108235UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962801248P 2019-02-05 2019-02-05
PCT/US2020/016613 WO2020163359A1 (en) 2019-02-05 2020-02-04 Deposition of carbon doped silicon oxide

Publications (1)

Publication Number Publication Date
SG11202108235UA true SG11202108235UA (en) 2021-08-30

Family

ID=71835965

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202108235UA SG11202108235UA (en) 2019-02-05 2020-02-04 Deposition of carbon doped silicon oxide

Country Status (8)

Country Link
US (1) US11649547B2 (ko)
EP (1) EP3902939A4 (ko)
JP (1) JP2022519295A (ko)
KR (1) KR20210114546A (ko)
CN (1) CN113383108A (ko)
SG (1) SG11202108235UA (ko)
TW (2) TWI803909B (ko)
WO (1) WO2020163359A1 (ko)

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US10804094B2 (en) 2016-05-06 2020-10-13 Applied Materials, Inc. Methods of depositing SiCON with C, O and N compositional control
US11549181B2 (en) 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
US20210017198A1 (en) 2019-04-05 2021-01-21 Versum Materials Us, Llc Organoamino-Functionalized Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films
US11186909B2 (en) 2019-08-26 2021-11-30 Applied Materials, Inc. Methods of depositing low-K films
JP2022546867A (ja) * 2019-09-10 2022-11-09 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の非コンフォーマル性堆積のための組成物、及びその組成物を使用する方法
JP7386732B2 (ja) * 2020-03-06 2023-11-27 東京エレクトロン株式会社 成膜方法
US11967498B2 (en) * 2020-06-29 2024-04-23 Applied Materials, Inc. Systems and methods for depositing low-k dielectric films
US11447865B2 (en) * 2020-11-17 2022-09-20 Applied Materials, Inc. Deposition of low-κ films
CN117083412A (zh) * 2021-03-18 2023-11-17 弗萨姆材料美国有限责任公司 用于高质量氧化硅薄膜的原子层沉积的组合物
CN114875398B (zh) * 2022-04-07 2024-04-19 西安建筑科技大学 一种稀土元素改性的耐磨难熔高熵合金涂层及制备方法
CN116497340B (zh) * 2023-06-21 2023-09-12 上海陛通半导体能源科技股份有限公司 一种形成低温碳氧化硅薄膜的方法

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US7875312B2 (en) * 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
WO2009006272A1 (en) * 2007-06-28 2009-01-08 Advanced Technology Materials, Inc. Precursors for silicon dioxide gap fill
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WO2012167060A2 (en) * 2011-06-03 2012-12-06 Air Products And Chemicals, Inc. Compositions and processes for depositing carbon-doped silicon-containing films
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US10453675B2 (en) * 2013-09-20 2019-10-22 Versum Materials Us, Llc Organoaminosilane precursors and methods for depositing films comprising same
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US9233990B2 (en) * 2014-02-28 2016-01-12 Air Products And Chemicals, Inc. Organoaminosilanes and methods for making same
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KR102332415B1 (ko) * 2014-10-24 2021-12-01 버슘머트리얼즈 유에스, 엘엘씨 실리콘-함유 막을 증착시키기 위한 조성물 및 이를 사용하는 방법
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Also Published As

Publication number Publication date
WO2020163359A1 (en) 2020-08-13
TW202045765A (zh) 2020-12-16
TWI738200B (zh) 2021-09-01
TWI803909B (zh) 2023-06-01
EP3902939A1 (en) 2021-11-03
JP2022519295A (ja) 2022-03-22
EP3902939A4 (en) 2022-09-28
US20200248309A1 (en) 2020-08-06
US11649547B2 (en) 2023-05-16
CN113383108A (zh) 2021-09-10
WO2020163359A8 (en) 2021-08-12
KR20210114546A (ko) 2021-09-23
TW202140838A (zh) 2021-11-01

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