SG11202105578RA - Etching compositions - Google Patents

Etching compositions

Info

Publication number
SG11202105578RA
SG11202105578RA SG11202105578RA SG11202105578RA SG11202105578RA SG 11202105578R A SG11202105578R A SG 11202105578RA SG 11202105578R A SG11202105578R A SG 11202105578RA SG 11202105578R A SG11202105578R A SG 11202105578RA SG 11202105578R A SG11202105578R A SG 11202105578RA
Authority
SG
Singapore
Prior art keywords
etching compositions
etching
compositions
Prior art date
Application number
SG11202105578RA
Other languages
English (en)
Inventor
Mick Bjelopavlic
Carl Ballesteros
Original Assignee
Fujifilm Electronic Materials Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials Usa Inc filed Critical Fujifilm Electronic Materials Usa Inc
Publication of SG11202105578RA publication Critical patent/SG11202105578RA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG11202105578RA 2018-12-03 2019-07-22 Etching compositions SG11202105578RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862774382P 2018-12-03 2018-12-03
US201962811600P 2019-02-28 2019-02-28
PCT/US2019/042780 WO2020117325A1 (en) 2018-12-03 2019-07-22 Etching compositions

Publications (1)

Publication Number Publication Date
SG11202105578RA true SG11202105578RA (en) 2021-06-29

Family

ID=70849674

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202105578RA SG11202105578RA (en) 2018-12-03 2019-07-22 Etching compositions

Country Status (9)

Country Link
US (3) US10920144B2 (zh)
EP (1) EP3891248A4 (zh)
JP (2) JP7474765B2 (zh)
KR (1) KR20210097749A (zh)
CN (2) CN115651656B (zh)
IL (1) IL283492B2 (zh)
SG (1) SG11202105578RA (zh)
TW (1) TWI845529B (zh)
WO (1) WO2020117325A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7474765B2 (ja) 2018-12-03 2024-04-25 フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド エッチング組成物
EP3997193B1 (en) * 2019-07-08 2023-05-03 Basf Se Composition, its use and a process for selectively etching silicon-germanium material
US20210104411A1 (en) * 2019-10-04 2021-04-08 Tokyo Ohka Kogyo Co., Ltd. Etching solution, and method of producing semiconductor device
KR20230065325A (ko) * 2020-09-11 2023-05-11 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 에칭 조성물
JP7547984B2 (ja) 2020-12-15 2024-09-10 三菱ケミカル株式会社 エッチング組成物、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法
US11923237B2 (en) * 2021-08-30 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacturing method of semiconductor device
CN118119686A (zh) * 2021-10-12 2024-05-31 富士胶片电子材料美国有限公司 蚀刻组合物
US20230274946A1 (en) * 2022-02-28 2023-08-31 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
KR20240000011A (ko) * 2022-06-22 2024-01-02 오씨아이 주식회사 질화규소 기판의 분석 방법
KR102693377B1 (ko) 2023-07-28 2024-08-09 한양대학교 산학협력단 무취의 실리콘 게르마늄 식각액 조성물 및 이를 이용한 식각 방법

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4604404A (en) * 1985-04-03 1986-08-05 A. H. Robins Company, Inc. Antiviral sulfonated naphthalene formaldehyde condensation polymers
TW263531B (zh) 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
KR20030007969A (ko) * 2000-06-16 2003-01-23 카오카부시키가이샤 세정제 조성물
US6705926B2 (en) 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
US6717019B2 (en) 2002-01-30 2004-04-06 Air Products And Chemicals, Inc. Glycidyl ether-capped acetylenic diol ethoxylate surfactants
US7176041B2 (en) * 2003-07-01 2007-02-13 Samsung Electronics Co., Ltd. PAA-based etchant, methods of using same, and resultant structures
US7452481B2 (en) * 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
CN101188932A (zh) * 2005-06-02 2008-05-28 阿克佐诺贝尔股份有限公司 可用于农业化学配制剂中的(烷基)萘甲醛缩合物磺酸盐和木素磺酸盐的协同增效共混物
KR20080015027A (ko) * 2005-06-13 2008-02-15 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 규화물 형성 후 금속 또는 금속 합금의 선택적인제거를 위한 조성물 및 방법
FR2893446B1 (fr) 2005-11-16 2008-02-15 Soitec Silicon Insulator Techn TRAITEMENT DE COUCHE DE SiGe POUR GRAVURE SELECTIVE
JP4912791B2 (ja) * 2006-08-21 2012-04-11 Jsr株式会社 洗浄用組成物、洗浄方法及び半導体装置の製造方法
JP4777197B2 (ja) * 2006-09-11 2011-09-21 富士フイルム株式会社 洗浄液及びそれを用いた洗浄方法
JP2008074990A (ja) * 2006-09-22 2008-04-03 Nihon Micro Coating Co Ltd 研磨スラリー及び方法
JP2008174807A (ja) 2007-01-19 2008-07-31 Nippon Hyomen Kagaku Kk クロムを含まない金属表面処理液
KR20100015974A (ko) 2007-03-31 2010-02-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 웨이퍼 재생을 위한 물질의 스트리핑 방법
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
EP2342738A4 (en) 2008-10-02 2013-04-17 Advanced Tech Materials USE OF TENSID / DETOINT MIXTURES FOR INCREASED METAL LOADING AND SURFACE PASSIVATION OF SILICON SUBSTRATES
US8815634B2 (en) 2008-10-31 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Dark currents and reducing defects in image sensors and photovoltaic junctions
JP5757749B2 (ja) * 2010-05-19 2015-07-29 富士フイルム株式会社 重合性組成物
JP6044337B2 (ja) * 2012-12-28 2016-12-14 三菱瓦斯化学株式会社 インジウムとガリウムおよび酸素、またはインジウムとガリウムと亜鉛および酸素からなる酸化物のエッチング液およびエッチング方法
KR20150140329A (ko) * 2013-05-02 2015-12-15 후지필름 가부시키가이샤 에칭 방법, 이에 이용하는 에칭액, 및 반도체 기판 제품의 제조 방법
JP6088999B2 (ja) * 2013-05-02 2017-03-01 富士フイルム株式会社 エッチング液およびエッチング液のキット、これをもちいたエッチング方法および半導体基板製品の製造方法
WO2014178426A1 (ja) * 2013-05-02 2014-11-06 富士フイルム株式会社 エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法
WO2014178424A1 (ja) * 2013-05-02 2014-11-06 富士フイルム株式会社 エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法
WO2015142778A1 (en) * 2014-03-18 2015-09-24 Fujifilm Electronic Materials U.S.A., Inc. Etching composition
TWI558850B (zh) * 2014-03-29 2016-11-21 精密聚合物股份有限公司 電子零件用處理液及電子零件之製造方法
JP2017216444A (ja) 2016-05-31 2017-12-07 ナガセケムテックス株式会社 エッチング液
KR102710507B1 (ko) * 2016-12-14 2024-09-25 삼성전자주식회사 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법
CN110446952A (zh) * 2017-03-31 2019-11-12 富士胶片株式会社 着色膜及其制造方法、固体摄像元件
JP7474765B2 (ja) 2018-12-03 2024-04-25 フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド エッチング組成物

Also Published As

Publication number Publication date
IL283492B1 (en) 2024-06-01
TWI845529B (zh) 2024-06-21
US10920144B2 (en) 2021-02-16
TW202031872A (zh) 2020-09-01
US20210371748A1 (en) 2021-12-02
EP3891248A4 (en) 2022-01-19
JP2024075001A (ja) 2024-05-31
JP7474765B2 (ja) 2024-04-25
CN113412324B (zh) 2022-12-02
US11912921B2 (en) 2024-02-27
US20210214612A1 (en) 2021-07-15
CN115651656A (zh) 2023-01-31
IL283492B2 (en) 2024-10-01
US20200172808A1 (en) 2020-06-04
CN115651656B (zh) 2024-09-03
KR20210097749A (ko) 2021-08-09
IL283492A (en) 2021-07-29
JP2022512116A (ja) 2022-02-02
CN113412324A (zh) 2021-09-17
WO2020117325A1 (en) 2020-06-11
EP3891248A1 (en) 2021-10-13
US11124704B2 (en) 2021-09-21

Similar Documents

Publication Publication Date Title
IL283492A (en) Burn preparations
GB201811312D0 (en) Compositions
GB2586745B (en) Compositions
GB201916960D0 (en) Compositions
SG11202003348YA (en) Etching compositions
SG11202009259VA (en) Compositions
SG11202104306XA (en) Compositions
GB201901890D0 (en) Compositions
IL288684A (en) Etching compounds
IL288608A (en) Etching compounds
GB201908396D0 (en) Compositions
PT3765379T (pt) Composições
IL291119A (en) Etching compounds
IL287656A (en) Etching compounds
IL281436A (en) Etching mixes
IL285250A (en) Etching compounds
GB201919234D0 (en) Compositions
IL269120A (en) Compositions comprising avelumab
GB2570649B (en) Compositions
GB201805676D0 (en) Compositions
GB201819206D0 (en) Novel compositions
ZA202005658B (en) Compositions
PT3768284T (pt) Composições de flagelina entrecoccus para uso em terapia
GB201820233D0 (en) Compositions
GB201816834D0 (en) Compositions