SG11202105578RA - Etching compositions - Google Patents
Etching compositionsInfo
- Publication number
- SG11202105578RA SG11202105578RA SG11202105578RA SG11202105578RA SG11202105578RA SG 11202105578R A SG11202105578R A SG 11202105578RA SG 11202105578R A SG11202105578R A SG 11202105578RA SG 11202105578R A SG11202105578R A SG 11202105578RA SG 11202105578R A SG11202105578R A SG 11202105578RA
- Authority
- SG
- Singapore
- Prior art keywords
- etching compositions
- etching
- compositions
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862774382P | 2018-12-03 | 2018-12-03 | |
US201962811600P | 2019-02-28 | 2019-02-28 | |
PCT/US2019/042780 WO2020117325A1 (en) | 2018-12-03 | 2019-07-22 | Etching compositions |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202105578RA true SG11202105578RA (en) | 2021-06-29 |
Family
ID=70849674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202105578RA SG11202105578RA (en) | 2018-12-03 | 2019-07-22 | Etching compositions |
Country Status (9)
Country | Link |
---|---|
US (3) | US10920144B2 (zh) |
EP (1) | EP3891248A4 (zh) |
JP (2) | JP7474765B2 (zh) |
KR (1) | KR20210097749A (zh) |
CN (2) | CN115651656B (zh) |
IL (1) | IL283492B2 (zh) |
SG (1) | SG11202105578RA (zh) |
TW (1) | TWI845529B (zh) |
WO (1) | WO2020117325A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7474765B2 (ja) | 2018-12-03 | 2024-04-25 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | エッチング組成物 |
EP3997193B1 (en) * | 2019-07-08 | 2023-05-03 | Basf Se | Composition, its use and a process for selectively etching silicon-germanium material |
US20210104411A1 (en) * | 2019-10-04 | 2021-04-08 | Tokyo Ohka Kogyo Co., Ltd. | Etching solution, and method of producing semiconductor device |
KR20230065325A (ko) * | 2020-09-11 | 2023-05-11 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 에칭 조성물 |
JP7547984B2 (ja) | 2020-12-15 | 2024-09-10 | 三菱ケミカル株式会社 | エッチング組成物、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法 |
US11923237B2 (en) * | 2021-08-30 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Manufacturing method of semiconductor device |
CN118119686A (zh) * | 2021-10-12 | 2024-05-31 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
US20230274946A1 (en) * | 2022-02-28 | 2023-08-31 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
KR20240000011A (ko) * | 2022-06-22 | 2024-01-02 | 오씨아이 주식회사 | 질화규소 기판의 분석 방법 |
KR102693377B1 (ko) | 2023-07-28 | 2024-08-09 | 한양대학교 산학협력단 | 무취의 실리콘 게르마늄 식각액 조성물 및 이를 이용한 식각 방법 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
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US4604404A (en) * | 1985-04-03 | 1986-08-05 | A. H. Robins Company, Inc. | Antiviral sulfonated naphthalene formaldehyde condensation polymers |
TW263531B (zh) | 1992-03-11 | 1995-11-21 | Mitsubishi Gas Chemical Co | |
KR20030007969A (ko) * | 2000-06-16 | 2003-01-23 | 카오카부시키가이샤 | 세정제 조성물 |
US6705926B2 (en) | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
US6717019B2 (en) | 2002-01-30 | 2004-04-06 | Air Products And Chemicals, Inc. | Glycidyl ether-capped acetylenic diol ethoxylate surfactants |
US7176041B2 (en) * | 2003-07-01 | 2007-02-13 | Samsung Electronics Co., Ltd. | PAA-based etchant, methods of using same, and resultant structures |
US7452481B2 (en) * | 2005-05-16 | 2008-11-18 | Kabushiki Kaisha Kobe Seiko Sho | Polishing slurry and method of reclaiming wafers |
CN101188932A (zh) * | 2005-06-02 | 2008-05-28 | 阿克佐诺贝尔股份有限公司 | 可用于农业化学配制剂中的(烷基)萘甲醛缩合物磺酸盐和木素磺酸盐的协同增效共混物 |
KR20080015027A (ko) * | 2005-06-13 | 2008-02-15 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 금속 규화물 형성 후 금속 또는 금속 합금의 선택적인제거를 위한 조성물 및 방법 |
FR2893446B1 (fr) | 2005-11-16 | 2008-02-15 | Soitec Silicon Insulator Techn | TRAITEMENT DE COUCHE DE SiGe POUR GRAVURE SELECTIVE |
JP4912791B2 (ja) * | 2006-08-21 | 2012-04-11 | Jsr株式会社 | 洗浄用組成物、洗浄方法及び半導体装置の製造方法 |
JP4777197B2 (ja) * | 2006-09-11 | 2011-09-21 | 富士フイルム株式会社 | 洗浄液及びそれを用いた洗浄方法 |
JP2008074990A (ja) * | 2006-09-22 | 2008-04-03 | Nihon Micro Coating Co Ltd | 研磨スラリー及び方法 |
JP2008174807A (ja) | 2007-01-19 | 2008-07-31 | Nippon Hyomen Kagaku Kk | クロムを含まない金属表面処理液 |
KR20100015974A (ko) | 2007-03-31 | 2010-02-12 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 웨이퍼 재생을 위한 물질의 스트리핑 방법 |
US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
EP2342738A4 (en) | 2008-10-02 | 2013-04-17 | Advanced Tech Materials | USE OF TENSID / DETOINT MIXTURES FOR INCREASED METAL LOADING AND SURFACE PASSIVATION OF SILICON SUBSTRATES |
US8815634B2 (en) | 2008-10-31 | 2014-08-26 | Varian Semiconductor Equipment Associates, Inc. | Dark currents and reducing defects in image sensors and photovoltaic junctions |
JP5757749B2 (ja) * | 2010-05-19 | 2015-07-29 | 富士フイルム株式会社 | 重合性組成物 |
JP6044337B2 (ja) * | 2012-12-28 | 2016-12-14 | 三菱瓦斯化学株式会社 | インジウムとガリウムおよび酸素、またはインジウムとガリウムと亜鉛および酸素からなる酸化物のエッチング液およびエッチング方法 |
KR20150140329A (ko) * | 2013-05-02 | 2015-12-15 | 후지필름 가부시키가이샤 | 에칭 방법, 이에 이용하는 에칭액, 및 반도체 기판 제품의 제조 방법 |
JP6088999B2 (ja) * | 2013-05-02 | 2017-03-01 | 富士フイルム株式会社 | エッチング液およびエッチング液のキット、これをもちいたエッチング方法および半導体基板製品の製造方法 |
WO2014178426A1 (ja) * | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法 |
WO2014178424A1 (ja) * | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法 |
WO2015142778A1 (en) * | 2014-03-18 | 2015-09-24 | Fujifilm Electronic Materials U.S.A., Inc. | Etching composition |
TWI558850B (zh) * | 2014-03-29 | 2016-11-21 | 精密聚合物股份有限公司 | 電子零件用處理液及電子零件之製造方法 |
JP2017216444A (ja) | 2016-05-31 | 2017-12-07 | ナガセケムテックス株式会社 | エッチング液 |
KR102710507B1 (ko) * | 2016-12-14 | 2024-09-25 | 삼성전자주식회사 | 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법 |
CN110446952A (zh) * | 2017-03-31 | 2019-11-12 | 富士胶片株式会社 | 着色膜及其制造方法、固体摄像元件 |
JP7474765B2 (ja) | 2018-12-03 | 2024-04-25 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | エッチング組成物 |
-
2019
- 2019-07-22 JP JP2021531795A patent/JP7474765B2/ja active Active
- 2019-07-22 IL IL283492A patent/IL283492B2/en unknown
- 2019-07-22 CN CN202211424131.3A patent/CN115651656B/zh active Active
- 2019-07-22 WO PCT/US2019/042780 patent/WO2020117325A1/en unknown
- 2019-07-22 EP EP19892583.6A patent/EP3891248A4/en active Pending
- 2019-07-22 KR KR1020217020169A patent/KR20210097749A/ko not_active Application Discontinuation
- 2019-07-22 SG SG11202105578RA patent/SG11202105578RA/en unknown
- 2019-07-22 US US16/517,720 patent/US10920144B2/en active Active
- 2019-07-22 CN CN201980091144.3A patent/CN113412324B/zh active Active
- 2019-07-26 TW TW108126552A patent/TWI845529B/zh active
-
2021
- 2021-01-27 US US17/159,551 patent/US11124704B2/en active Active
- 2021-08-10 US US17/398,181 patent/US11912921B2/en active Active
-
2024
- 2024-04-15 JP JP2024065539A patent/JP2024075001A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IL283492B1 (en) | 2024-06-01 |
TWI845529B (zh) | 2024-06-21 |
US10920144B2 (en) | 2021-02-16 |
TW202031872A (zh) | 2020-09-01 |
US20210371748A1 (en) | 2021-12-02 |
EP3891248A4 (en) | 2022-01-19 |
JP2024075001A (ja) | 2024-05-31 |
JP7474765B2 (ja) | 2024-04-25 |
CN113412324B (zh) | 2022-12-02 |
US11912921B2 (en) | 2024-02-27 |
US20210214612A1 (en) | 2021-07-15 |
CN115651656A (zh) | 2023-01-31 |
IL283492B2 (en) | 2024-10-01 |
US20200172808A1 (en) | 2020-06-04 |
CN115651656B (zh) | 2024-09-03 |
KR20210097749A (ko) | 2021-08-09 |
IL283492A (en) | 2021-07-29 |
JP2022512116A (ja) | 2022-02-02 |
CN113412324A (zh) | 2021-09-17 |
WO2020117325A1 (en) | 2020-06-11 |
EP3891248A1 (en) | 2021-10-13 |
US11124704B2 (en) | 2021-09-21 |
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