SG11202100991PA - Off-axis illumination overlay measurement using two-diffracted orders imaging - Google Patents

Off-axis illumination overlay measurement using two-diffracted orders imaging

Info

Publication number
SG11202100991PA
SG11202100991PA SG11202100991PA SG11202100991PA SG11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA
Authority
SG
Singapore
Prior art keywords
overlay measurement
axis illumination
diffracted orders
imaging
illumination overlay
Prior art date
Application number
SG11202100991PA
Other languages
English (en)
Inventor
Shalibo Yoni
Yuri Paskover
Vladimir Levinski
Amnon Manassen
Shlomo Eisanbach
Gilad Laredo
Ariel Hildesheim
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11202100991PA publication Critical patent/SG11202100991PA/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/952—Inspecting the exterior surface of cylindrical bodies or wires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Data Mining & Analysis (AREA)
SG11202100991PA 2018-08-28 2018-12-14 Off-axis illumination overlay measurement using two-diffracted orders imaging SG11202100991PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862723944P 2018-08-28 2018-08-28
PCT/US2018/065579 WO2020046408A1 (fr) 2018-08-28 2018-12-14 Mesure de superposition d'éclairage hors axe à l'aide d'une imagerie à deux ordres diffractés

Publications (1)

Publication Number Publication Date
SG11202100991PA true SG11202100991PA (en) 2021-03-30

Family

ID=69645312

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202100991PA SG11202100991PA (en) 2018-08-28 2018-12-14 Off-axis illumination overlay measurement using two-diffracted orders imaging

Country Status (8)

Country Link
US (1) US11281111B2 (fr)
EP (1) EP3811154A4 (fr)
JP (2) JP7344954B2 (fr)
KR (2) KR20240096661A (fr)
CN (1) CN112567296B (fr)
SG (1) SG11202100991PA (fr)
TW (1) TWI791866B (fr)
WO (1) WO2020046408A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3770652A1 (fr) * 2019-07-23 2021-01-27 ETH Zurich Élément optique diffractif
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11346657B2 (en) 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
US11164307B1 (en) * 2020-07-21 2021-11-02 Kla Corporation Misregistration metrology by using fringe Moiré and optical Moiré effects
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US20230314344A1 (en) * 2022-03-30 2023-10-05 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology

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JP3891872B2 (ja) * 2002-04-04 2007-03-14 株式会社ミツトヨ 微小周期構造評価装置及び微小周期構造評価方法
US7342659B2 (en) * 2005-01-21 2008-03-11 Carl Zeiss Meditec, Inc. Cross-dispersed spectrometer in a spectral domain optical coherence tomography system
US7528953B2 (en) * 2005-03-01 2009-05-05 Kla-Tencor Technologies Corp. Target acquisition and overlay metrology based on two diffracted orders imaging
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
NL1036459A1 (nl) * 2008-02-13 2009-08-14 Asml Netherlands Bv Method and apparatus for angular-resolved spectroscopic lithography characterization.
EP3006902B1 (fr) * 2010-03-30 2018-04-11 Zygo Corporation Système et procédé de lithographie
JP5661194B2 (ja) * 2010-11-12 2015-01-28 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法及び装置、リソグラフィシステム並びにデバイス製造方法
US9007584B2 (en) * 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
US8867041B2 (en) * 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
IL217843A (en) 2011-02-11 2016-11-30 Asml Netherlands Bv A system and method for testing, a lithographic system, a cell for lithographic processing, and a method for producing a device
WO2013070957A1 (fr) * 2011-11-09 2013-05-16 Zygo Corporation Tête d'encodage compacte pour système d'encodage interférométrique
US8456641B1 (en) 2011-11-23 2013-06-04 Kla-Tencor Corporation Optical system
TWI516746B (zh) * 2012-04-20 2016-01-11 賽格股份有限公司 在干涉編碼系統中執行非諧循環錯誤補償的方法、裝置及計算機程式產品，以及微影系統
JP6532479B2 (ja) 2014-03-31 2019-06-19 ケーエルエー−テンカー コーポレイション スキャタロメトリ計測法を用いた焦点測定
KR102355347B1 (ko) * 2014-11-26 2022-01-24 에이에스엠엘 네델란즈 비.브이. 계측 방법, 컴퓨터 제품 및 시스템
KR102607646B1 (ko) * 2015-05-19 2023-11-29 케이엘에이 코포레이션 오버레이 측정을 위한 지형 위상 제어
TWI656409B (zh) * 2015-09-09 2019-04-11 美商克萊譚克公司 基於輔助電磁場之引入之一階散射測量疊加之新方法
US10101676B2 (en) * 2015-09-23 2018-10-16 KLA—Tencor Corporation Spectroscopic beam profile overlay metrology
CN109478027B (zh) * 2016-05-31 2022-03-11 株式会社尼康 标记检测装置和标记检测方法、计测装置、曝光装置和曝光方法以及器件制造方法
KR20190031542A (ko) * 2016-07-21 2019-03-26 에이에스엠엘 네델란즈 비.브이. 타겟을 측정하는 방법, 기판, 메트롤로지 장치, 및 리소그래피 장치
US10048132B2 (en) * 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
JP2020509431A (ja) * 2017-02-22 2020-03-26 エーエスエムエル ネザーランズ ビー．ブイ． コンピュータによる計測
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology

Also Published As

Publication number Publication date
CN112567296A (zh) 2021-03-26
US20200132446A1 (en) 2020-04-30
KR20210038983A (ko) 2021-04-08
WO2020046408A1 (fr) 2020-03-05
US11281111B2 (en) 2022-03-22
EP3811154A4 (fr) 2022-04-06
JP2021535595A (ja) 2021-12-16
TW202022348A (zh) 2020-06-16
EP3811154A1 (fr) 2021-04-28
CN112567296B (zh) 2024-03-08
TWI791866B (zh) 2023-02-11
KR20240096661A (ko) 2024-06-26
JP2023165738A (ja) 2023-11-17
JP7344954B2 (ja) 2023-09-14

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