SG11202100991PA - Off-axis illumination overlay measurement using two-diffracted orders imaging - Google Patents
Off-axis illumination overlay measurement using two-diffracted orders imagingInfo
- Publication number
- SG11202100991PA SG11202100991PA SG11202100991PA SG11202100991PA SG11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA
- Authority
- SG
- Singapore
- Prior art keywords
- overlay measurement
- axis illumination
- diffracted orders
- imaging
- illumination overlay
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/952—Inspecting the exterior surface of cylindrical bodies or wires
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
- G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862723944P | 2018-08-28 | 2018-08-28 | |
PCT/US2018/065579 WO2020046408A1 (en) | 2018-08-28 | 2018-12-14 | Off-axis illumination overlay measurement using two-diffracted orders imaging |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202100991PA true SG11202100991PA (en) | 2021-03-30 |
Family
ID=69645312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202100991PA SG11202100991PA (en) | 2018-08-28 | 2018-12-14 | Off-axis illumination overlay measurement using two-diffracted orders imaging |
Country Status (8)
Country | Link |
---|---|
US (1) | US11281111B2 (en) |
EP (1) | EP3811154A4 (en) |
JP (2) | JP7344954B2 (en) |
KR (1) | KR20210038983A (en) |
CN (1) | CN112567296B (en) |
SG (1) | SG11202100991PA (en) |
TW (1) | TWI791866B (en) |
WO (1) | WO2020046408A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11604149B2 (en) | 2020-04-23 | 2023-03-14 | Kla Corporation | Metrology methods and optical schemes for measurement of misregistration by using hatched target designs |
US11164307B1 (en) | 2020-07-21 | 2021-11-02 | Kla Corporation | Misregistration metrology by using fringe Moiré and optical Moiré effects |
US11300405B2 (en) * | 2020-08-03 | 2022-04-12 | Kla Corporation | Grey-mode scanning scatterometry overlay metrology |
US11796925B2 (en) | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
US20230314344A1 (en) * | 2022-03-30 | 2023-10-05 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3891872B2 (en) | 2002-04-04 | 2007-03-14 | 株式会社ミツトヨ | Micro periodic structure evaluation apparatus and micro periodic structure evaluation method |
US7342659B2 (en) * | 2005-01-21 | 2008-03-11 | Carl Zeiss Meditec, Inc. | Cross-dispersed spectrometer in a spectral domain optical coherence tomography system |
US7528953B2 (en) * | 2005-03-01 | 2009-05-05 | Kla-Tencor Technologies Corp. | Target acquisition and overlay metrology based on two diffracted orders imaging |
US7528941B2 (en) | 2006-06-01 | 2009-05-05 | Kla-Tencor Technolgies Corporation | Order selected overlay metrology |
NL1036459A1 (en) * | 2008-02-13 | 2009-08-14 | Asml Netherlands Bv | Method and apparatus for angular-resolved spectroscopic lithography characterization. |
US8300233B2 (en) * | 2010-03-30 | 2012-10-30 | Zygo Corporation | Interferometric encoder systems |
KR101492205B1 (en) * | 2010-11-12 | 2015-02-10 | 에이에스엠엘 네델란즈 비.브이. | Metrology method and apparatus, lithographic system and device manufacturing method |
US9007584B2 (en) * | 2010-12-27 | 2015-04-14 | Nanometrics Incorporated | Simultaneous measurement of multiple overlay errors using diffraction based overlay |
US8867041B2 (en) * | 2011-01-18 | 2014-10-21 | Jordan Valley Semiconductor Ltd | Optical vacuum ultra-violet wavelength nanoimprint metrology |
IL217843A (en) * | 2011-02-11 | 2016-11-30 | Asml Netherlands Bv | Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method |
WO2013070957A1 (en) * | 2011-11-09 | 2013-05-16 | Zygo Corporation | Compact encoder head for interferometric encoder system |
US8456641B1 (en) | 2011-11-23 | 2013-06-04 | Kla-Tencor Corporation | Optical system |
TWI516746B (en) | 2012-04-20 | 2016-01-11 | 賽格股份有限公司 | Method, apparatus, and computer-program product for performing non-harmonic cyclic error compensation in interferometric encoder systems and lithography systems |
EP3126893A4 (en) | 2014-03-31 | 2017-10-04 | Kla-Tencor Corporation | Focus measurements using scatterometry metrology |
KR102355347B1 (en) * | 2014-11-26 | 2022-01-24 | 에이에스엠엘 네델란즈 비.브이. | Metrology method, computer product and system |
TWI715582B (en) | 2015-05-19 | 2021-01-11 | 美商克萊譚克公司 | Topographic phase control for overlay measurement |
TWI656409B (en) * | 2015-09-09 | 2019-04-11 | 美商克萊譚克公司 | A new method based on the introduction of auxiliary electromagnetic field to superimpose first-order scattering measurement |
US10101676B2 (en) * | 2015-09-23 | 2018-10-16 | KLA—Tencor Corporation | Spectroscopic beam profile overlay metrology |
EP3467591A4 (en) * | 2016-05-31 | 2020-02-12 | Nikon Corporation | Mark detection apparatus, mark detection method, measuring apparatus, exposure apparatus, exposure method, and device manufacturing method |
KR20190031542A (en) * | 2016-07-21 | 2019-03-26 | 에이에스엠엘 네델란즈 비.브이. | METHOD OF MEASURING TARGET, SUBSTRATE, METROLOGY DEVICE, AND LITHOGRAPHIC DEVICE |
US10048132B2 (en) * | 2016-07-28 | 2018-08-14 | Kla-Tencor Corporation | Simultaneous capturing of overlay signals from multiple targets |
CN113946105A (en) * | 2017-02-22 | 2022-01-18 | Asml荷兰有限公司 | Calculation measurement method |
US10677588B2 (en) * | 2018-04-09 | 2020-06-09 | Kla-Tencor Corporation | Localized telecentricity and focus optimization for overlay metrology |
-
2018
- 2018-12-14 CN CN201880096229.6A patent/CN112567296B/en active Active
- 2018-12-14 SG SG11202100991PA patent/SG11202100991PA/en unknown
- 2018-12-14 EP EP18931575.7A patent/EP3811154A4/en active Pending
- 2018-12-14 KR KR1020217008813A patent/KR20210038983A/en active Search and Examination
- 2018-12-14 JP JP2021508303A patent/JP7344954B2/en active Active
- 2018-12-14 WO PCT/US2018/065579 patent/WO2020046408A1/en unknown
- 2018-12-14 US US16/317,603 patent/US11281111B2/en active Active
-
2019
- 2019-07-09 TW TW108124045A patent/TWI791866B/en active
-
2023
- 2023-09-04 JP JP2023142824A patent/JP2023165738A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20210038983A (en) | 2021-04-08 |
CN112567296B (en) | 2024-03-08 |
JP2021535595A (en) | 2021-12-16 |
US20200132446A1 (en) | 2020-04-30 |
JP2023165738A (en) | 2023-11-17 |
US11281111B2 (en) | 2022-03-22 |
JP7344954B2 (en) | 2023-09-14 |
EP3811154A1 (en) | 2021-04-28 |
TW202022348A (en) | 2020-06-16 |
WO2020046408A1 (en) | 2020-03-05 |
TWI791866B (en) | 2023-02-11 |
EP3811154A4 (en) | 2022-04-06 |
CN112567296A (en) | 2021-03-26 |
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