SG11202100991PA - Off-axis illumination overlay measurement using two-diffracted orders imaging - Google Patents

Off-axis illumination overlay measurement using two-diffracted orders imaging

Info

Publication number
SG11202100991PA
SG11202100991PA SG11202100991PA SG11202100991PA SG11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA SG 11202100991P A SG11202100991P A SG 11202100991PA
Authority
SG
Singapore
Prior art keywords
overlay measurement
axis illumination
diffracted orders
imaging
illumination overlay
Prior art date
Application number
SG11202100991PA
Inventor
Shalibo Yoni
Yuri Paskover
Vladimir Levinski
Amnon Manassen
Shlomo Eisanbach
Gilad Laredo
Ariel Hildesheim
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11202100991PA publication Critical patent/SG11202100991PA/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/14Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/26Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4788Diffraction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/952Inspecting the exterior surface of cylindrical bodies or wires
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28Systems for automatic generation of focusing signals
    • G02B7/36Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • G02B7/38Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
SG11202100991PA 2018-08-28 2018-12-14 Off-axis illumination overlay measurement using two-diffracted orders imaging SG11202100991PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862723944P 2018-08-28 2018-08-28
PCT/US2018/065579 WO2020046408A1 (en) 2018-08-28 2018-12-14 Off-axis illumination overlay measurement using two-diffracted orders imaging

Publications (1)

Publication Number Publication Date
SG11202100991PA true SG11202100991PA (en) 2021-03-30

Family

ID=69645312

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202100991PA SG11202100991PA (en) 2018-08-28 2018-12-14 Off-axis illumination overlay measurement using two-diffracted orders imaging

Country Status (8)

Country Link
US (1) US11281111B2 (en)
EP (1) EP3811154A4 (en)
JP (2) JP7344954B2 (en)
KR (1) KR20210038983A (en)
CN (1) CN112567296B (en)
SG (1) SG11202100991PA (en)
TW (1) TWI791866B (en)
WO (1) WO2020046408A1 (en)

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US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11164307B1 (en) 2020-07-21 2021-11-02 Kla Corporation Misregistration metrology by using fringe Moiré and optical Moiré effects
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US20230314344A1 (en) * 2022-03-30 2023-10-05 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology

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JP3891872B2 (en) 2002-04-04 2007-03-14 株式会社ミツトヨ Micro periodic structure evaluation apparatus and micro periodic structure evaluation method
US7342659B2 (en) * 2005-01-21 2008-03-11 Carl Zeiss Meditec, Inc. Cross-dispersed spectrometer in a spectral domain optical coherence tomography system
US7528953B2 (en) * 2005-03-01 2009-05-05 Kla-Tencor Technologies Corp. Target acquisition and overlay metrology based on two diffracted orders imaging
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
NL1036459A1 (en) * 2008-02-13 2009-08-14 Asml Netherlands Bv Method and apparatus for angular-resolved spectroscopic lithography characterization.
US8300233B2 (en) * 2010-03-30 2012-10-30 Zygo Corporation Interferometric encoder systems
KR101492205B1 (en) * 2010-11-12 2015-02-10 에이에스엠엘 네델란즈 비.브이. Metrology method and apparatus, lithographic system and device manufacturing method
US9007584B2 (en) * 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
US8867041B2 (en) * 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
IL217843A (en) * 2011-02-11 2016-11-30 Asml Netherlands Bv Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
WO2013070957A1 (en) * 2011-11-09 2013-05-16 Zygo Corporation Compact encoder head for interferometric encoder system
US8456641B1 (en) 2011-11-23 2013-06-04 Kla-Tencor Corporation Optical system
TWI516746B (en) 2012-04-20 2016-01-11 賽格股份有限公司 Method, apparatus, and computer-program product for performing non-harmonic cyclic error compensation in interferometric encoder systems and lithography systems
EP3126893A4 (en) 2014-03-31 2017-10-04 Kla-Tencor Corporation Focus measurements using scatterometry metrology
KR102355347B1 (en) * 2014-11-26 2022-01-24 에이에스엠엘 네델란즈 비.브이. Metrology method, computer product and system
TWI715582B (en) 2015-05-19 2021-01-11 美商克萊譚克公司 Topographic phase control for overlay measurement
TWI656409B (en) * 2015-09-09 2019-04-11 美商克萊譚克公司 A new method based on the introduction of auxiliary electromagnetic field to superimpose first-order scattering measurement
US10101676B2 (en) * 2015-09-23 2018-10-16 KLA—Tencor Corporation Spectroscopic beam profile overlay metrology
EP3467591A4 (en) * 2016-05-31 2020-02-12 Nikon Corporation Mark detection apparatus, mark detection method, measuring apparatus, exposure apparatus, exposure method, and device manufacturing method
KR20190031542A (en) * 2016-07-21 2019-03-26 에이에스엠엘 네델란즈 비.브이. METHOD OF MEASURING TARGET, SUBSTRATE, METROLOGY DEVICE, AND LITHOGRAPHIC DEVICE
US10048132B2 (en) * 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
CN113946105A (en) * 2017-02-22 2022-01-18 Asml荷兰有限公司 Calculation measurement method
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology

Also Published As

Publication number Publication date
KR20210038983A (en) 2021-04-08
CN112567296B (en) 2024-03-08
JP2021535595A (en) 2021-12-16
US20200132446A1 (en) 2020-04-30
JP2023165738A (en) 2023-11-17
US11281111B2 (en) 2022-03-22
JP7344954B2 (en) 2023-09-14
EP3811154A1 (en) 2021-04-28
TW202022348A (en) 2020-06-16
WO2020046408A1 (en) 2020-03-05
TWI791866B (en) 2023-02-11
EP3811154A4 (en) 2022-04-06
CN112567296A (en) 2021-03-26

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