SG11202100015PA - Remote capacitively coupled plasma source with improved ion blocker - Google Patents

Remote capacitively coupled plasma source with improved ion blocker

Info

Publication number
SG11202100015PA
SG11202100015PA SG11202100015PA SG11202100015PA SG11202100015PA SG 11202100015P A SG11202100015P A SG 11202100015PA SG 11202100015P A SG11202100015P A SG 11202100015PA SG 11202100015P A SG11202100015P A SG 11202100015PA SG 11202100015P A SG11202100015P A SG 11202100015PA
Authority
SG
Singapore
Prior art keywords
coupled plasma
plasma source
capacitively coupled
improved ion
ion blocker
Prior art date
Application number
SG11202100015PA
Other languages
English (en)
Inventor
Vivek B Shah
Vinayak Vishwanath Hassan
Bhaskar Kumar
Ganesh Balasubramanian
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202100015PA publication Critical patent/SG11202100015PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0262—Shields electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20214—Rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202100015PA 2018-07-27 2019-07-26 Remote capacitively coupled plasma source with improved ion blocker SG11202100015PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862711206P 2018-07-27 2018-07-27
PCT/US2019/043624 WO2020023853A1 (en) 2018-07-27 2019-07-26 Remote capacitively coupled plasma source with improved ion blocker

Publications (1)

Publication Number Publication Date
SG11202100015PA true SG11202100015PA (en) 2021-02-25

Family

ID=69177930

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202100015PA SG11202100015PA (en) 2018-07-27 2019-07-26 Remote capacitively coupled plasma source with improved ion blocker

Country Status (7)

Country Link
US (2) US11069514B2 (zh)
JP (1) JP7418401B2 (zh)
KR (2) KR102541406B1 (zh)
CN (1) CN112534542B (zh)
SG (1) SG11202100015PA (zh)
TW (2) TWI764021B (zh)
WO (1) WO2020023853A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230010766A (ko) * 2020-06-01 2023-01-19 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 플라스마 처리 방법
US20230107392A1 (en) * 2021-10-01 2023-04-06 Applied Materials, Inc Method and apparatus for generating plasma with ion blocker plate
KR20230100215A (ko) * 2021-12-28 2023-07-05 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102583259B1 (ko) * 2021-12-28 2023-09-27 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US20230335377A1 (en) * 2022-04-15 2023-10-19 Applied Materials, Inc. Showerhead assembly with heated showerhead
KR102646841B1 (ko) 2022-07-15 2024-03-13 세메스 주식회사 기판처리장치 및 기판처리방법

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US4158589A (en) 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus
US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
JPH07169746A (ja) * 1993-12-14 1995-07-04 Ebara Corp 低エネルギー中性粒子線を用いた微細加工装置
JPH07263407A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd ラジカル発生装置、ラジカル照射方法、半導体装置の製造方法、電子装置の製造方法およびドライエッチング方法
USH2212H1 (en) * 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
WO2006106665A1 (ja) * 2005-03-31 2006-10-12 Tokyo Electron Limited 基板の窒化処理方法および絶縁膜の形成方法
TW200709296A (en) * 2005-05-31 2007-03-01 Tokyo Electron Ltd Plasma treatment apparatus and plasma treatment method
KR100855002B1 (ko) * 2007-05-23 2008-08-28 삼성전자주식회사 플라즈마 이온 주입시스템
KR100909162B1 (ko) 2007-10-23 2009-07-23 주식회사 동부하이텍 반도체 소자의 제조 방법
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
US9324576B2 (en) * 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US20120180954A1 (en) * 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
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JP2013084552A (ja) * 2011-09-29 2013-05-09 Tokyo Electron Ltd ラジカル選択装置及び基板処理装置
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US10256079B2 (en) * 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
WO2014137905A2 (en) * 2013-03-06 2014-09-12 Plasma-Therm, Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN104342632B (zh) * 2013-08-07 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 预清洗腔室及等离子体加工设备
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KR20160011150A (ko) * 2014-07-18 2016-01-29 어플라이드 머티어리얼스, 인코포레이티드 라디칼 경화에 의해 보조되는 다공성 탄소-도핑된 산화물 막들의 플라즈마-강화 및 라디칼-기반 cvd
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SG11202008981TA (en) 2018-03-28 2020-10-29 Applied Materials Inc Remote capacitively coupled plasma deposition of amorphous silicon

Also Published As

Publication number Publication date
JP2021530876A (ja) 2021-11-11
CN112534542A (zh) 2021-03-19
CN112534542B (zh) 2024-08-23
TWI826998B (zh) 2023-12-21
TW202232574A (zh) 2022-08-16
US20200035467A1 (en) 2020-01-30
KR20230084330A (ko) 2023-06-12
KR102590963B1 (ko) 2023-10-17
TWI764021B (zh) 2022-05-11
US11069514B2 (en) 2021-07-20
KR20210024241A (ko) 2021-03-04
TW202016345A (zh) 2020-05-01
KR102541406B1 (ko) 2023-06-08
US20210351020A1 (en) 2021-11-11
WO2020023853A1 (en) 2020-01-30
JP7418401B2 (ja) 2024-01-19

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