SG11202012678WA - Semiconductor device with anti-deflection layers - Google Patents
Semiconductor device with anti-deflection layersInfo
- Publication number
- SG11202012678WA SG11202012678WA SG11202012678WA SG11202012678WA SG11202012678WA SG 11202012678W A SG11202012678W A SG 11202012678WA SG 11202012678W A SG11202012678W A SG 11202012678WA SG 11202012678W A SG11202012678W A SG 11202012678WA SG 11202012678W A SG11202012678W A SG 11202012678WA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- deflection layers
- deflection
- layers
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/010,571 US10515905B1 (en) | 2018-06-18 | 2018-06-18 | Semiconductor device with anti-deflection layers |
PCT/US2019/030856 WO2019245660A1 (en) | 2018-06-18 | 2019-05-06 | Semiconductor device with anti-deflection layers |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202012678WA true SG11202012678WA (en) | 2021-01-28 |
Family
ID=66625281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202012678WA SG11202012678WA (en) | 2018-06-18 | 2019-05-06 | Semiconductor device with anti-deflection layers |
Country Status (10)
Country | Link |
---|---|
US (1) | US10515905B1 (en) |
EP (1) | EP3807928A1 (en) |
JP (1) | JP7072121B2 (en) |
KR (1) | KR102478822B1 (en) |
CN (1) | CN112640092A (en) |
CA (1) | CA3104245C (en) |
IL (1) | IL276506B (en) |
SG (1) | SG11202012678WA (en) |
TW (1) | TWI720487B (en) |
WO (1) | WO2019245660A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10896821B2 (en) * | 2018-09-28 | 2021-01-19 | Lam Research Corporation | Asymmetric wafer bow compensation by physical vapor deposition |
US11410937B2 (en) * | 2020-03-06 | 2022-08-09 | Raytheon Company | Semiconductor device with aluminum nitride anti-deflection layer |
JP7076490B2 (en) | 2020-03-24 | 2022-05-27 | 株式会社Kokusai Electric | Substrate processing methods, semiconductor device manufacturing methods, substrate processing devices, and programs |
US11569134B2 (en) * | 2020-04-14 | 2023-01-31 | International Business Machines Corporation | Wafer backside engineering for wafer stress control |
US11894477B2 (en) * | 2021-05-17 | 2024-02-06 | Raytheon Company | Electrical device with stress buffer layer and stress compensation layer |
US11851785B2 (en) | 2021-05-21 | 2023-12-26 | Raytheon Company | Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device |
US20220384290A1 (en) * | 2021-06-01 | 2022-12-01 | Wolfspeed, Inc. | Multilayer encapsulation for humidity robustness and highly accelerated stress tests and related fabrication methods |
US20220384366A1 (en) * | 2021-06-01 | 2022-12-01 | Cree, Inc. | Multilayer encapsulation for humidity robustness and related fabrication methods |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03151637A (en) * | 1989-11-09 | 1991-06-27 | Kowa Kurieitaa:Kk | Manufacture of semiconductor device and plasma cvd equipment |
JP2822656B2 (en) | 1990-10-17 | 1998-11-11 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
JP3632256B2 (en) | 1994-09-30 | 2005-03-23 | 株式会社デンソー | Manufacturing method of semiconductor device having silicon nitride film |
JP2002076336A (en) | 2000-09-01 | 2002-03-15 | Mitsubishi Electric Corp | Semiconductor device and soi substrate |
JP2002158213A (en) * | 2000-11-21 | 2002-05-31 | Sharp Corp | Method of manufacturing semiconductor device |
CN101465295A (en) | 2000-11-22 | 2009-06-24 | 株式会社日立制作所 | Semiconductor device and method for fabricating the same |
US6984892B2 (en) * | 2001-03-28 | 2006-01-10 | Lam Research Corporation | Semiconductor structure implementing low-K dielectric materials and supporting stubs |
US6548422B1 (en) | 2001-09-27 | 2003-04-15 | Agere Systems, Inc. | Method and structure for oxide/silicon nitride interface substructure improvements |
CN1244144C (en) * | 2002-04-09 | 2006-03-01 | 台湾积体电路制造股份有限公司 | Method for forming low dielectric constant dielectric layer and conductive interconnector structure |
KR100761361B1 (en) | 2006-05-02 | 2007-09-27 | 주식회사 하이닉스반도체 | Semiconductor device and method for manufacturing the same |
US7834399B2 (en) * | 2007-06-05 | 2010-11-16 | International Business Machines Corporation | Dual stress memorization technique for CMOS application |
US7998800B2 (en) * | 2007-07-06 | 2011-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2009076605A (en) * | 2007-09-19 | 2009-04-09 | Fujitsu Microelectronics Ltd | Method of manufacturing semiconductor device |
US7982250B2 (en) * | 2007-09-21 | 2011-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20090159958A1 (en) | 2007-12-20 | 2009-06-25 | Spansion Llc | Electronic device including a silicon nitride layer and a process of forming the same |
US7807586B2 (en) | 2008-03-28 | 2010-10-05 | Tokyo Electron Limited | Method of forming a stressed passivation film using a non-ionizing electromagnetic radiation-assisted oxidation process |
US9082857B2 (en) * | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
JP5478166B2 (en) * | 2008-09-11 | 2014-04-23 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP5384291B2 (en) | 2008-11-26 | 2014-01-08 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus |
KR20230173233A (en) * | 2009-11-13 | 2023-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and electronic device including the same |
US8076250B1 (en) * | 2010-10-06 | 2011-12-13 | Applied Materials, Inc. | PECVD oxide-nitride and oxide-silicon stacks for 3D memory application |
JP5867814B2 (en) * | 2012-01-13 | 2016-02-24 | 住友電工デバイス・イノベーション株式会社 | Manufacturing method of semiconductor device |
CN107611012B (en) | 2017-08-31 | 2020-10-02 | 长江存储科技有限责任公司 | Stress control method and structure of prefabricated back film |
-
2018
- 2018-06-18 US US16/010,571 patent/US10515905B1/en active Active
-
2019
- 2019-05-06 WO PCT/US2019/030856 patent/WO2019245660A1/en unknown
- 2019-05-06 KR KR1020207024751A patent/KR102478822B1/en active IP Right Grant
- 2019-05-06 JP JP2021516524A patent/JP7072121B2/en active Active
- 2019-05-06 CA CA3104245A patent/CA3104245C/en active Active
- 2019-05-06 SG SG11202012678WA patent/SG11202012678WA/en unknown
- 2019-05-06 CN CN201980052599.4A patent/CN112640092A/en active Pending
- 2019-05-06 EP EP19725472.5A patent/EP3807928A1/en active Pending
- 2019-05-20 TW TW108117349A patent/TWI720487B/en active
-
2020
- 2020-08-05 IL IL276506A patent/IL276506B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
IL276506A (en) | 2020-09-30 |
EP3807928A1 (en) | 2021-04-21 |
US20190385954A1 (en) | 2019-12-19 |
IL276506B (en) | 2021-04-29 |
KR20200111244A (en) | 2020-09-28 |
US10515905B1 (en) | 2019-12-24 |
WO2019245660A1 (en) | 2019-12-26 |
KR102478822B1 (en) | 2022-12-16 |
CA3104245A1 (en) | 2019-12-26 |
TWI720487B (en) | 2021-03-01 |
CN112640092A (en) | 2021-04-09 |
TW202002235A (en) | 2020-01-01 |
JP7072121B2 (en) | 2022-05-19 |
CA3104245C (en) | 2023-03-28 |
JP2021526318A (en) | 2021-09-30 |
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