SG11202009529WA - Method for manufacturing a monocrystalline layer of gaas material and substrate for epitaxial growth of a monocrystalline layer of gaas material - Google Patents

Method for manufacturing a monocrystalline layer of gaas material and substrate for epitaxial growth of a monocrystalline layer of gaas material

Info

Publication number
SG11202009529WA
SG11202009529WA SG11202009529WA SG11202009529WA SG11202009529WA SG 11202009529W A SG11202009529W A SG 11202009529WA SG 11202009529W A SG11202009529W A SG 11202009529WA SG 11202009529W A SG11202009529W A SG 11202009529WA SG 11202009529W A SG11202009529W A SG 11202009529WA
Authority
SG
Singapore
Prior art keywords
monocrystalline layer
gaas material
substrate
manufacturing
epitaxial growth
Prior art date
Application number
SG11202009529WA
Other languages
English (en)
Inventor
Bruno Ghyselen
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11202009529WA publication Critical patent/SG11202009529WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202009529WA 2018-03-28 2019-03-26 Method for manufacturing a monocrystalline layer of gaas material and substrate for epitaxial growth of a monocrystalline layer of gaas material SG11202009529WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1800252A FR3079534B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau gaas et substrat pour croissance par epitaxie d'une couche monocristalline de materiau gaas
PCT/IB2019/000207 WO2019186268A1 (fr) 2018-03-28 2019-03-26 Procédé de fabrication d'une couche monocristalline de matériau gaas et substrat pour croissance par épitaxie d'une couche monocristalline de matériau gaas

Publications (1)

Publication Number Publication Date
SG11202009529WA true SG11202009529WA (en) 2020-10-29

Family

ID=63079953

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009529WA SG11202009529WA (en) 2018-03-28 2019-03-26 Method for manufacturing a monocrystalline layer of gaas material and substrate for epitaxial growth of a monocrystalline layer of gaas material

Country Status (8)

Country Link
US (2) US11549195B2 (fr)
EP (1) EP3775330A1 (fr)
JP (1) JP7358707B2 (fr)
KR (1) KR102665386B1 (fr)
CN (1) CN111954730A (fr)
FR (1) FR3079534B1 (fr)
SG (1) SG11202009529WA (fr)
WO (1) WO2019186268A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3079534B1 (fr) * 2018-03-28 2022-03-18 Soitec Silicon On Insulator Procede de fabrication d'une couche monocristalline de materiau gaas et substrat pour croissance par epitaxie d'une couche monocristalline de materiau gaas

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US8178221B2 (en) * 2000-07-10 2012-05-15 Amit Goyal {100}<100> or 45°-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices
FR2816445B1 (fr) 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
WO2002045140A2 (fr) 2000-11-22 2002-06-06 Motorola, Inc. Structures semi-conductrices a substrat flexible
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
FR2817394B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US20030012965A1 (en) * 2001-07-10 2003-01-16 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layer
US6562127B1 (en) * 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates
US20070069225A1 (en) 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc III-V light emitting device
WO2009096931A1 (fr) * 2008-01-28 2009-08-06 Amit Goyal Dispositifs électroniques flexibles à zone large, basés sur des semi-conducteurs
US9064789B2 (en) * 2013-08-12 2015-06-23 International Business Machines Corporation Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
FR3041170B1 (fr) 2015-09-14 2018-12-07 Electricite De France Systeme et procede pour recharger des appareils electroniques nomades, et adaptateur pour un tel systeme
FR3041364B1 (fr) 2015-09-18 2017-10-06 Soitec Silicon On Insulator Procede de transfert de paves monocristallins
CN107785235A (zh) 2016-08-31 2018-03-09 沈阳硅基科技有限公司 一种在基板上制造薄膜的方法
FR3079534B1 (fr) * 2018-03-28 2022-03-18 Soitec Silicon On Insulator Procede de fabrication d'une couche monocristalline de materiau gaas et substrat pour croissance par epitaxie d'une couche monocristalline de materiau gaas

Also Published As

Publication number Publication date
US11549195B2 (en) 2023-01-10
US20210054528A1 (en) 2021-02-25
US20220364266A1 (en) 2022-11-17
FR3079534A1 (fr) 2019-10-04
KR102665386B1 (ko) 2024-05-13
WO2019186268A1 (fr) 2019-10-03
EP3775330A1 (fr) 2021-02-17
CN111954730A (zh) 2020-11-17
FR3079534B1 (fr) 2022-03-18
JP2021518320A (ja) 2021-08-02
JP7358707B2 (ja) 2023-10-11
US11976380B2 (en) 2024-05-07
KR20200136434A (ko) 2020-12-07

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