SG11202009412QA - Method for producing a monocrystalline layer of an lno material and substrate for epitaxial growth of a monocrystalline layer of an lno material - Google Patents

Method for producing a monocrystalline layer of an lno material and substrate for epitaxial growth of a monocrystalline layer of an lno material

Info

Publication number
SG11202009412QA
SG11202009412QA SG11202009412QA SG11202009412QA SG11202009412QA SG 11202009412Q A SG11202009412Q A SG 11202009412QA SG 11202009412Q A SG11202009412Q A SG 11202009412QA SG 11202009412Q A SG11202009412Q A SG 11202009412QA SG 11202009412Q A SG11202009412Q A SG 11202009412QA
Authority
SG
Singapore
Prior art keywords
monocrystalline layer
lno material
producing
substrate
epitaxial growth
Prior art date
Application number
SG11202009412QA
Other languages
English (en)
Inventor
Bruno Ghyselen
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11202009412QA publication Critical patent/SG11202009412QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SG11202009412QA 2018-03-28 2019-03-26 Method for producing a monocrystalline layer of an lno material and substrate for epitaxial growth of a monocrystalline layer of an lno material SG11202009412QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1800256A FR3079533B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau lno et substrat pour croissance par epitaxie d'une couche monocristalline de materiau lno
PCT/IB2019/000200 WO2019186263A1 (fr) 2018-03-28 2019-03-26 Procédé de fabrication d'une couche monocristalline de matériau lno et substrat pour croissance par épitaxie d'une couche monocristalline de matériau lno

Publications (1)

Publication Number Publication Date
SG11202009412QA true SG11202009412QA (en) 2020-10-29

Family

ID=63834054

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009412QA SG11202009412QA (en) 2018-03-28 2019-03-26 Method for producing a monocrystalline layer of an lno material and substrate for epitaxial growth of a monocrystalline layer of an lno material

Country Status (8)

Country Link
US (2) US11828000B2 (ko)
EP (1) EP3775331A1 (ko)
JP (1) JP7355289B2 (ko)
KR (1) KR102636118B1 (ko)
CN (1) CN111902572A (ko)
FR (1) FR3079533B1 (ko)
SG (1) SG11202009412QA (ko)
WO (1) WO2019186263A1 (ko)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH082998A (ja) * 1994-06-15 1996-01-09 Sumitomo Electric Ind Ltd 酸化物誘電体薄膜及びその製造方法
EP1482549B1 (en) * 2003-05-27 2011-03-30 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of fabrication of a heteroepitaxial microstructure
US8507361B2 (en) * 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US7407869B2 (en) * 2000-11-27 2008-08-05 S.O.I.Tec Silicon On Insulator Technologies Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
KR100476901B1 (ko) * 2002-05-22 2005-03-17 삼성전자주식회사 소이 반도체기판의 형성방법
US9564320B2 (en) * 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US8860005B1 (en) * 2013-08-08 2014-10-14 International Business Machines Corporation Thin light emitting diode and fabrication method
FR3034569B1 (fr) 2015-04-02 2021-10-22 Soitec Silicon On Insulator Electrolyte solide avance et sa methode de fabrication
FR3041364B1 (fr) 2015-09-18 2017-10-06 Soitec Silicon On Insulator Procede de transfert de paves monocristallins

Also Published As

Publication number Publication date
KR102636118B1 (ko) 2024-02-13
JP2021518323A (ja) 2021-08-02
FR3079533A1 (fr) 2019-10-04
US11828000B2 (en) 2023-11-28
CN111902572A (zh) 2020-11-06
EP3775331A1 (fr) 2021-02-17
FR3079533B1 (fr) 2021-04-09
WO2019186263A1 (fr) 2019-10-03
US20210095391A1 (en) 2021-04-01
KR20200136431A (ko) 2020-12-07
JP7355289B2 (ja) 2023-10-03
US20240044043A1 (en) 2024-02-08

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