SG11202003151VA - Etching method and semiconductor manufacturing method - Google Patents
Etching method and semiconductor manufacturing methodInfo
- Publication number
- SG11202003151VA SG11202003151VA SG11202003151VA SG11202003151VA SG11202003151VA SG 11202003151V A SG11202003151V A SG 11202003151VA SG 11202003151V A SG11202003151V A SG 11202003151VA SG 11202003151V A SG11202003151V A SG 11202003151VA SG 11202003151V A SG11202003151V A SG 11202003151VA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor manufacturing
- etching
- etching method
- semiconductor
- manufacturing
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017212871 | 2017-11-02 | ||
PCT/JP2018/039220 WO2019087850A1 (ja) | 2017-11-02 | 2018-10-22 | エッチング方法及び半導体の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202003151VA true SG11202003151VA (en) | 2020-05-28 |
Family
ID=66331838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202003151VA SG11202003151VA (en) | 2017-11-02 | 2018-10-22 | Etching method and semiconductor manufacturing method |
Country Status (9)
Country | Link |
---|---|
US (1) | US11114305B2 (de) |
EP (1) | EP3706158A4 (de) |
JP (1) | JP7310608B2 (de) |
KR (1) | KR102376841B1 (de) |
CN (1) | CN111213224B (de) |
IL (1) | IL274331B2 (de) |
SG (1) | SG11202003151VA (de) |
TW (1) | TWI713920B (de) |
WO (1) | WO2019087850A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102644490B1 (ko) * | 2019-08-06 | 2024-03-08 | 가부시끼가이샤 레조낙 | 가스 처리 방법 및 가스 처리 장치 |
CN115699266A (zh) * | 2020-08-31 | 2023-02-03 | 昭和电工株式会社 | 等离子体蚀刻方法和半导体元件的制造方法 |
WO2023100476A1 (ja) * | 2021-12-02 | 2023-06-08 | 株式会社レゾナック | デポジション膜の形成方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US152255A (en) | 1874-06-23 | Improvement in transplanters | ||
US176293A (en) | 1876-04-18 | Improvement in grain-binders | ||
JPH01304731A (ja) * | 1988-06-01 | 1989-12-08 | Matsushita Electric Ind Co Ltd | エッチング方法とエッチドミラーとエッチング装置 |
JP3160961B2 (ja) * | 1991-10-02 | 2001-04-25 | ソニー株式会社 | ドライエッチング方法 |
US6660643B1 (en) * | 1999-03-03 | 2003-12-09 | Rwe Schott Solar, Inc. | Etching of semiconductor wafer edges |
CN101625966A (zh) | 2008-07-11 | 2010-01-13 | 东京毅力科创株式会社 | 基板处理方法 |
JP2010041028A (ja) * | 2008-07-11 | 2010-02-18 | Tokyo Electron Ltd | 基板処理方法 |
SG173283A1 (en) | 2010-01-26 | 2011-08-29 | Semiconductor Energy Lab | Method for manufacturing soi substrate |
JP2014041849A (ja) | 2010-06-24 | 2014-03-06 | Nippon Zeon Co Ltd | プラズマ反応用ガス及びその利用 |
JP5537324B2 (ja) | 2010-08-05 | 2014-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
WO2014104290A1 (ja) * | 2012-12-27 | 2014-07-03 | 日本ゼオン株式会社 | ドライエッチング方法 |
JP6788177B2 (ja) * | 2015-05-14 | 2020-11-25 | セントラル硝子株式会社 | ドライエッチング方法、ドライエッチング剤及び半導体装置の製造方法 |
JP6327295B2 (ja) | 2015-08-12 | 2018-05-23 | セントラル硝子株式会社 | ドライエッチング方法 |
JP6604833B2 (ja) * | 2015-12-03 | 2019-11-13 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
-
2018
- 2018-10-22 KR KR1020207010772A patent/KR102376841B1/ko active IP Right Grant
- 2018-10-22 JP JP2019551126A patent/JP7310608B2/ja active Active
- 2018-10-22 US US16/756,914 patent/US11114305B2/en active Active
- 2018-10-22 IL IL274331A patent/IL274331B2/en unknown
- 2018-10-22 CN CN201880066209.4A patent/CN111213224B/zh active Active
- 2018-10-22 WO PCT/JP2018/039220 patent/WO2019087850A1/ja unknown
- 2018-10-22 EP EP18872684.8A patent/EP3706158A4/de active Pending
- 2018-10-22 SG SG11202003151VA patent/SG11202003151VA/en unknown
- 2018-10-31 TW TW107138483A patent/TWI713920B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN111213224A (zh) | 2020-05-29 |
CN111213224B (zh) | 2023-12-19 |
IL274331A (en) | 2020-06-30 |
TW201930648A (zh) | 2019-08-01 |
WO2019087850A1 (ja) | 2019-05-09 |
KR20200044974A (ko) | 2020-04-29 |
JP7310608B2 (ja) | 2023-07-19 |
EP3706158A4 (de) | 2021-01-06 |
JPWO2019087850A1 (ja) | 2020-09-24 |
IL274331B (en) | 2022-12-01 |
US11114305B2 (en) | 2021-09-07 |
US20210217627A1 (en) | 2021-07-15 |
KR102376841B1 (ko) | 2022-03-18 |
EP3706158A1 (de) | 2020-09-09 |
IL274331B2 (en) | 2023-04-01 |
TWI713920B (zh) | 2020-12-21 |
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