SG11202002830TA - A strain-balanced semiconductor structure - Google Patents

A strain-balanced semiconductor structure

Info

Publication number
SG11202002830TA
SG11202002830TA SG11202002830TA SG11202002830TA SG11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA
Authority
SG
Singapore
Prior art keywords
strain
semiconductor structure
balanced semiconductor
balanced
semiconductor
Prior art date
Application number
SG11202002830TA
Other languages
English (en)
Inventor
Andrew Clark
Rodney Pelzel
Andrew Johnson
Andrew Joel
Aidan John Daly
Adam Christopher Jandl
Original Assignee
Iqe Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iqe Plc filed Critical Iqe Plc
Publication of SG11202002830TA publication Critical patent/SG11202002830TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0218—Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
SG11202002830TA 2017-11-22 2018-11-21 A strain-balanced semiconductor structure SG11202002830TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762589994P 2017-11-22 2017-11-22
US201762607857P 2017-12-19 2017-12-19
PCT/US2018/062333 WO2019104232A1 (en) 2017-11-22 2018-11-21 A strain-balanced semiconductor structure

Publications (1)

Publication Number Publication Date
SG11202002830TA true SG11202002830TA (en) 2020-04-29

Family

ID=64734118

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002830TA SG11202002830TA (en) 2017-11-22 2018-11-21 A strain-balanced semiconductor structure

Country Status (8)

Country Link
US (1) US11005231B2 (zh)
EP (1) EP3714482A1 (zh)
JP (1) JP2021504943A (zh)
KR (1) KR102557608B1 (zh)
CN (1) CN111492464A (zh)
SG (1) SG11202002830TA (zh)
TW (1) TWI805649B (zh)
WO (1) WO2019104232A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6761917B1 (ja) * 2019-11-29 2020-09-30 Ｊｘ金属株式会社 リン化インジウム基板、半導体エピタキシャルウエハ、及びリン化インジウム基板の製造方法
JP6761916B1 (ja) * 2019-11-29 2020-09-30 Ｊｘ金属株式会社 リン化インジウム基板、半導体エピタキシャルウエハ、及びリン化インジウム基板の製造方法
EP4280399A1 (en) * 2022-05-18 2023-11-22 Imec VZW Vertical laser emitter and manufacturing method thereof
WO2023248654A1 (ja) * 2022-06-20 2023-12-28 ソニーグループ株式会社 面発光レーザ及び測距装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963949A (en) * 1988-09-30 1990-10-16 The United States Of America As Represented Of The United States Department Of Energy Substrate structures for InP-based devices
US5548128A (en) 1994-12-14 1996-08-20 The United States Of America As Represented By The Secretary Of The Air Force Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates
JP2000349393A (ja) * 1999-03-26 2000-12-15 Fuji Xerox Co Ltd 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ
US20020076906A1 (en) * 2000-12-18 2002-06-20 Motorola, Inc. Semiconductor structure including a monocrystalline film, device including the structure, and methods of forming the structure and device
US6995427B2 (en) * 2003-01-29 2006-02-07 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same
US7622363B2 (en) * 2003-05-06 2009-11-24 Canon Kabushiki Kaisha Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
EP1583139A1 (en) * 2004-04-02 2005-10-05 Interuniversitaire Microelectronica Centrum vzw ( IMEC) Method for depositing a group III-nitride material on a silicon substrate and device therefor
US8362460B2 (en) * 2006-08-11 2013-01-29 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
US7791063B2 (en) * 2007-08-30 2010-09-07 Intel Corporation High hole mobility p-channel Ge transistor structure on Si substrate
US8053810B2 (en) * 2007-09-07 2011-11-08 International Business Machines Corporation Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same
JP5477685B2 (ja) * 2009-03-19 2014-04-23 サンケン電気株式会社 半導体ウェーハ及び半導体素子及びその製造方法
JP5706102B2 (ja) * 2010-05-07 2015-04-22 ローム株式会社 窒化物半導体素子
EP2541589B1 (en) * 2011-06-30 2013-08-28 Siltronic AG Layered semiconductor substrate and method for manufacturing it
US8981382B2 (en) * 2013-03-06 2015-03-17 Iqe Rf, Llc Semiconductor structure including buffer with strain compensation layers
EP2983195A1 (en) * 2014-08-04 2016-02-10 EpiGan NV Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure
CN111095578B (zh) 2017-09-18 2023-10-27 坦佩雷大学基金会 半导体多层结构

Also Published As

Publication number Publication date
US11005231B2 (en) 2021-05-11
TWI805649B (zh) 2023-06-21
US20190157834A1 (en) 2019-05-23
JP2021504943A (ja) 2021-02-15
EP3714482A1 (en) 2020-09-30
KR102557608B1 (ko) 2023-07-19
CN111492464A (zh) 2020-08-04
TW201935788A (zh) 2019-09-01
WO2019104232A1 (en) 2019-05-31
KR20200083619A (ko) 2020-07-08

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