SG11202002830TA - A strain-balanced semiconductor structure - Google Patents
A strain-balanced semiconductor structureInfo
- Publication number
- SG11202002830TA SG11202002830TA SG11202002830TA SG11202002830TA SG11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA
- Authority
- SG
- Singapore
- Prior art keywords
- strain
- semiconductor structure
- balanced semiconductor
- balanced
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0218—Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/02—MBE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762589994P | 2017-11-22 | 2017-11-22 | |
US201762607857P | 2017-12-19 | 2017-12-19 | |
PCT/US2018/062333 WO2019104232A1 (en) | 2017-11-22 | 2018-11-21 | A strain-balanced semiconductor structure |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202002830TA true SG11202002830TA (en) | 2020-04-29 |
Family
ID=64734118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202002830TA SG11202002830TA (en) | 2017-11-22 | 2018-11-21 | A strain-balanced semiconductor structure |
Country Status (8)
Country | Link |
---|---|
US (1) | US11005231B2 (zh) |
EP (1) | EP3714482A1 (zh) |
JP (1) | JP2021504943A (zh) |
KR (1) | KR102557608B1 (zh) |
CN (1) | CN111492464A (zh) |
SG (1) | SG11202002830TA (zh) |
TW (1) | TWI805649B (zh) |
WO (1) | WO2019104232A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6761916B1 (ja) * | 2019-11-29 | 2020-09-30 | Jx金属株式会社 | リン化インジウム基板、半導体エピタキシャルウエハ、及びリン化インジウム基板の製造方法 |
JP6761917B1 (ja) * | 2019-11-29 | 2020-09-30 | Jx金属株式会社 | リン化インジウム基板、半導体エピタキシャルウエハ、及びリン化インジウム基板の製造方法 |
EP4280399A1 (en) * | 2022-05-18 | 2023-11-22 | Imec VZW | Vertical laser emitter and manufacturing method thereof |
WO2023248654A1 (ja) * | 2022-06-20 | 2023-12-28 | ソニーグループ株式会社 | 面発光レーザ及び測距装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4963949A (en) * | 1988-09-30 | 1990-10-16 | The United States Of America As Represented Of The United States Department Of Energy | Substrate structures for InP-based devices |
US5548128A (en) | 1994-12-14 | 1996-08-20 | The United States Of America As Represented By The Secretary Of The Air Force | Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates |
JP2000349393A (ja) * | 1999-03-26 | 2000-12-15 | Fuji Xerox Co Ltd | 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ |
US20020076906A1 (en) * | 2000-12-18 | 2002-06-20 | Motorola, Inc. | Semiconductor structure including a monocrystalline film, device including the structure, and methods of forming the structure and device |
US6995427B2 (en) * | 2003-01-29 | 2006-02-07 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same |
TWI244774B (en) * | 2003-05-06 | 2005-12-01 | Canon Kk | Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
EP1583139A1 (en) * | 2004-04-02 | 2005-10-05 | Interuniversitaire Microelectronica Centrum vzw ( IMEC) | Method for depositing a group III-nitride material on a silicon substrate and device therefor |
US8362460B2 (en) * | 2006-08-11 | 2013-01-29 | Cyrium Technologies Incorporated | Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails |
US7791063B2 (en) * | 2007-08-30 | 2010-09-07 | Intel Corporation | High hole mobility p-channel Ge transistor structure on Si substrate |
US8053810B2 (en) * | 2007-09-07 | 2011-11-08 | International Business Machines Corporation | Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same |
JP5477685B2 (ja) * | 2009-03-19 | 2014-04-23 | サンケン電気株式会社 | 半導体ウェーハ及び半導体素子及びその製造方法 |
JP5706102B2 (ja) * | 2010-05-07 | 2015-04-22 | ローム株式会社 | 窒化物半導体素子 |
EP2541589B1 (en) * | 2011-06-30 | 2013-08-28 | Siltronic AG | Layered semiconductor substrate and method for manufacturing it |
US8981382B2 (en) * | 2013-03-06 | 2015-03-17 | Iqe Rf, Llc | Semiconductor structure including buffer with strain compensation layers |
EP2983195A1 (en) * | 2014-08-04 | 2016-02-10 | EpiGan NV | Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure |
EP3685450A1 (en) | 2017-09-18 | 2020-07-29 | Tty-Säätiö Sr. | Semiconductor multilayer structure |
-
2018
- 2018-11-21 WO PCT/US2018/062333 patent/WO2019104232A1/en unknown
- 2018-11-21 CN CN201880073421.3A patent/CN111492464A/zh active Pending
- 2018-11-21 JP JP2020527942A patent/JP2021504943A/ja not_active Ceased
- 2018-11-21 KR KR1020207017715A patent/KR102557608B1/ko active IP Right Grant
- 2018-11-21 EP EP18821784.8A patent/EP3714482A1/en active Pending
- 2018-11-21 US US16/198,391 patent/US11005231B2/en active Active
- 2018-11-21 SG SG11202002830TA patent/SG11202002830TA/en unknown
- 2018-11-22 TW TW107141755A patent/TWI805649B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20200083619A (ko) | 2020-07-08 |
JP2021504943A (ja) | 2021-02-15 |
US11005231B2 (en) | 2021-05-11 |
WO2019104232A1 (en) | 2019-05-31 |
US20190157834A1 (en) | 2019-05-23 |
EP3714482A1 (en) | 2020-09-30 |
TW201935788A (zh) | 2019-09-01 |
CN111492464A (zh) | 2020-08-04 |
KR102557608B1 (ko) | 2023-07-19 |
TWI805649B (zh) | 2023-06-21 |
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