SG11202002830TA - A strain-balanced semiconductor structure - Google Patents

A strain-balanced semiconductor structure

Info

Publication number
SG11202002830TA
SG11202002830TA SG11202002830TA SG11202002830TA SG11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA SG 11202002830T A SG11202002830T A SG 11202002830TA
Authority
SG
Singapore
Prior art keywords
strain
semiconductor structure
balanced semiconductor
balanced
semiconductor
Prior art date
Application number
SG11202002830TA
Other languages
English (en)
Inventor
Andrew Clark
Rodney Pelzel
Andrew Johnson
Andrew Joel
Aidan John Daly
Adam Christopher Jandl
Original Assignee
Iqe Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iqe Plc filed Critical Iqe Plc
Publication of SG11202002830TA publication Critical patent/SG11202002830TA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0206Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0218Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02461Phosphides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02463Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00Special growth methods for semiconductor lasers
    • H01S2304/02MBE
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00Special growth methods for semiconductor lasers
    • H01S2304/04MOCVD or MOVPE

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
SG11202002830TA 2017-11-22 2018-11-21 A strain-balanced semiconductor structure SG11202002830TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762589994P 2017-11-22 2017-11-22
US201762607857P 2017-12-19 2017-12-19
PCT/US2018/062333 WO2019104232A1 (en) 2017-11-22 2018-11-21 A strain-balanced semiconductor structure

Publications (1)

Publication Number Publication Date
SG11202002830TA true SG11202002830TA (en) 2020-04-29

Family

ID=64734118

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002830TA SG11202002830TA (en) 2017-11-22 2018-11-21 A strain-balanced semiconductor structure

Country Status (8)

Country Link
US (1) US11005231B2 (zh)
EP (1) EP3714482A1 (zh)
JP (1) JP2021504943A (zh)
KR (1) KR102557608B1 (zh)
CN (1) CN111492464A (zh)
SG (1) SG11202002830TA (zh)
TW (1) TWI805649B (zh)
WO (1) WO2019104232A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6761916B1 (ja) * 2019-11-29 2020-09-30 Jx金属株式会社 リン化インジウム基板、半導体エピタキシャルウエハ、及びリン化インジウム基板の製造方法
JP6761917B1 (ja) * 2019-11-29 2020-09-30 Jx金属株式会社 リン化インジウム基板、半導体エピタキシャルウエハ、及びリン化インジウム基板の製造方法
EP4280399A1 (en) * 2022-05-18 2023-11-22 Imec VZW Vertical laser emitter and manufacturing method thereof
WO2023248654A1 (ja) * 2022-06-20 2023-12-28 ソニーグループ株式会社 面発光レーザ及び測距装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963949A (en) * 1988-09-30 1990-10-16 The United States Of America As Represented Of The United States Department Of Energy Substrate structures for InP-based devices
US5548128A (en) 1994-12-14 1996-08-20 The United States Of America As Represented By The Secretary Of The Air Force Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates
JP2000349393A (ja) * 1999-03-26 2000-12-15 Fuji Xerox Co Ltd 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ
US20020076906A1 (en) * 2000-12-18 2002-06-20 Motorola, Inc. Semiconductor structure including a monocrystalline film, device including the structure, and methods of forming the structure and device
US6995427B2 (en) * 2003-01-29 2006-02-07 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same
TWI244774B (en) * 2003-05-06 2005-12-01 Canon Kk Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
EP1583139A1 (en) * 2004-04-02 2005-10-05 Interuniversitaire Microelectronica Centrum vzw ( IMEC) Method for depositing a group III-nitride material on a silicon substrate and device therefor
US8362460B2 (en) * 2006-08-11 2013-01-29 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
US7791063B2 (en) * 2007-08-30 2010-09-07 Intel Corporation High hole mobility p-channel Ge transistor structure on Si substrate
US8053810B2 (en) * 2007-09-07 2011-11-08 International Business Machines Corporation Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same
JP5477685B2 (ja) * 2009-03-19 2014-04-23 サンケン電気株式会社 半導体ウェーハ及び半導体素子及びその製造方法
JP5706102B2 (ja) * 2010-05-07 2015-04-22 ローム株式会社 窒化物半導体素子
EP2541589B1 (en) * 2011-06-30 2013-08-28 Siltronic AG Layered semiconductor substrate and method for manufacturing it
US8981382B2 (en) * 2013-03-06 2015-03-17 Iqe Rf, Llc Semiconductor structure including buffer with strain compensation layers
EP2983195A1 (en) * 2014-08-04 2016-02-10 EpiGan NV Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure
EP3685450A1 (en) 2017-09-18 2020-07-29 Tty-Säätiö Sr. Semiconductor multilayer structure

Also Published As

Publication number Publication date
KR20200083619A (ko) 2020-07-08
JP2021504943A (ja) 2021-02-15
US11005231B2 (en) 2021-05-11
WO2019104232A1 (en) 2019-05-31
US20190157834A1 (en) 2019-05-23
EP3714482A1 (en) 2020-09-30
TW201935788A (zh) 2019-09-01
CN111492464A (zh) 2020-08-04
KR102557608B1 (ko) 2023-07-19
TWI805649B (zh) 2023-06-21

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