SG11202000011SA - Magnetic tunnel junctions suitable for high temperature thermal processing - Google Patents

Magnetic tunnel junctions suitable for high temperature thermal processing

Info

Publication number
SG11202000011SA
SG11202000011SA SG11202000011SA SG11202000011SA SG11202000011SA SG 11202000011S A SG11202000011S A SG 11202000011SA SG 11202000011S A SG11202000011S A SG 11202000011SA SG 11202000011S A SG11202000011S A SG 11202000011SA SG 11202000011S A SG11202000011S A SG 11202000011SA
Authority
SG
Singapore
Prior art keywords
high temperature
magnetic tunnel
thermal processing
temperature thermal
tunnel junctions
Prior art date
Application number
SG11202000011SA
Inventor
Lin Xue
Chi Hong Ching
Jaesoo Ahn
Mahendra Pakala
Rongjun Wang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202000011SA publication Critical patent/SG11202000011SA/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details
    • H10N50/85Magnetic active materials
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109Details
    • G11B5/313Disposition of layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909Arrangements using a magnetic tunnel junction
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932Magnetic biasing films
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1434Memory
    • H01L2924/1435Random access memory [RAM]
    • H01L2924/1443Non-volatile random-access memory [NVRAM]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Soft Magnetic Materials (AREA)
SG11202000011SA 2017-07-21 2018-05-17 Magnetic tunnel junctions suitable for high temperature thermal processing SG11202000011SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762535792P 2017-07-21 2017-07-21
US15/862,301 US10255935B2 (en) 2017-07-21 2018-01-04 Magnetic tunnel junctions suitable for high temperature thermal processing
PCT/US2018/033262 WO2019018051A1 (en) 2017-07-21 2018-05-17 Magnetic tunnel junctions suitable for high temperature thermal processing

Publications (1)

Publication Number Publication Date
SG11202000011SA true SG11202000011SA (en) 2020-02-27

Family

ID=65016047

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202000011SA SG11202000011SA (en) 2017-07-21 2018-05-17 Magnetic tunnel junctions suitable for high temperature thermal processing

Country Status (8)

Country Link
US (3) US10255935B2 (en)
EP (1) EP3656003A4 (en)
JP (1) JP7133613B2 (en)
KR (1) KR102512558B1 (en)
CN (2) CN117750869A (en)
SG (1) SG11202000011SA (en)
TW (2) TWI826026B (en)
WO (1) WO2019018051A1 (en)

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US11456411B2 (en) * 2019-07-02 2022-09-27 HeFeChip Corporation Limited Method for fabricating magnetic tunneling junction element with a composite capping layer
WO2021011144A1 (en) * 2019-07-16 2021-01-21 Applied Materials, Inc. Magnetic tunnel junction stack with data retention
US11049537B2 (en) 2019-07-29 2021-06-29 Applied Materials, Inc. Additive patterning of semiconductor film stacks
JP2021044429A (en) * 2019-09-12 2021-03-18 キオクシア株式会社 Magnetic storage device
CN112635655A (en) * 2019-10-08 2021-04-09 上海磁宇信息科技有限公司 Magnetic tunnel junction covering layer and manufacturing process thereof
CN112635652B (en) * 2019-10-08 2023-05-26 上海磁宇信息科技有限公司 Magnetic tunnel junction structure of magnetic random access memory
CN112635651A (en) * 2019-10-08 2021-04-09 上海磁宇信息科技有限公司 Magnetic tunnel junction structure and magnetic random access memory
CN112652702B (en) * 2019-10-10 2023-12-22 上海磁宇信息科技有限公司 Magnetic tunnel junction structure of magnetic random access memory
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US11522126B2 (en) * 2019-10-14 2022-12-06 Applied Materials, Inc. Magnetic tunnel junctions with protection layers
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CN112802959A (en) * 2019-11-13 2021-05-14 上海磁宇信息科技有限公司 Magnetic tunnel junction structure and magnetic random access memory
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US11361805B2 (en) 2019-11-22 2022-06-14 Western Digital Technologies, Inc. Magnetoresistive memory device including a reference layer side dielectric spacer layer
US11005034B1 (en) 2019-11-22 2021-05-11 Western Digital Technologies, Inc. Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
US10991407B1 (en) 2019-11-22 2021-04-27 Western Digital Technologies, Inc. Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
US11871679B2 (en) 2021-06-07 2024-01-09 Western Digital Technologies, Inc. Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US11056640B2 (en) 2019-11-22 2021-07-06 Western Digital Technologies, Inc. Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
US11404193B2 (en) 2019-11-22 2022-08-02 Western Digital Technologies, Inc. Magnetoresistive memory device including a magnesium containing dust layer
US11839162B2 (en) 2019-11-22 2023-12-05 Western Digital Technologies, Inc. Magnetoresistive memory device including a plurality of reference layers
CN112928203B (en) * 2019-12-05 2023-04-07 上海磁宇信息科技有限公司 Magnetic tunnel junction structure of multilayer covering layer and magnetic random access memory
CN112928204B (en) * 2019-12-05 2023-06-02 上海磁宇信息科技有限公司 Capping layer structure unit for improving vertical anisotropy of free layer of magnetic tunnel junction
CN113013325B (en) * 2019-12-19 2023-04-07 上海磁宇信息科技有限公司 Magnetic tunnel junction unit with leakage magnetic field balance layer and magnetic random access memory
CN113140670A (en) * 2020-01-16 2021-07-20 上海磁宇信息科技有限公司 Magnetic tunnel junction vertical antiferromagnetic layer and random access memory
CN113346007A (en) * 2020-03-02 2021-09-03 上海磁宇信息科技有限公司 Magnetic tunnel junction structure and magnetic random access memory thereof
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Also Published As

Publication number Publication date
TW201909459A (en) 2019-03-01
TWI782038B (en) 2022-11-01
WO2019018051A1 (en) 2019-01-24
EP3656003A1 (en) 2020-05-27
KR20200022516A (en) 2020-03-03
EP3656003A4 (en) 2021-09-22
JP2020527865A (en) 2020-09-10
TW202306207A (en) 2023-02-01
CN117750869A (en) 2024-03-22
US20190027169A1 (en) 2019-01-24
US20190172485A1 (en) 2019-06-06
US10255935B2 (en) 2019-04-09
TWI826026B (en) 2023-12-11
US10622011B2 (en) 2020-04-14
KR102512558B1 (en) 2023-03-21
US20200160884A1 (en) 2020-05-21
JP7133613B2 (en) 2022-09-08
CN110692144A (en) 2020-01-14
US11251364B2 (en) 2022-02-15
CN110692144B (en) 2024-01-30

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