SG11202000011SA - Magnetic tunnel junctions suitable for high temperature thermal processing - Google Patents
Magnetic tunnel junctions suitable for high temperature thermal processingInfo
- Publication number
- SG11202000011SA SG11202000011SA SG11202000011SA SG11202000011SA SG11202000011SA SG 11202000011S A SG11202000011S A SG 11202000011SA SG 11202000011S A SG11202000011S A SG 11202000011SA SG 11202000011S A SG11202000011S A SG 11202000011SA SG 11202000011S A SG11202000011S A SG 11202000011SA
- Authority
- SG
- Singapore
- Prior art keywords
- high temperature
- magnetic tunnel
- thermal processing
- temperature thermal
- tunnel junctions
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1434—Memory
- H01L2924/1435—Random access memory [RAM]
- H01L2924/1443—Non-volatile random-access memory [NVRAM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Soft Magnetic Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762535792P | 2017-07-21 | 2017-07-21 | |
US15/862,301 US10255935B2 (en) | 2017-07-21 | 2018-01-04 | Magnetic tunnel junctions suitable for high temperature thermal processing |
PCT/US2018/033262 WO2019018051A1 (en) | 2017-07-21 | 2018-05-17 | Magnetic tunnel junctions suitable for high temperature thermal processing |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202000011SA true SG11202000011SA (en) | 2020-02-27 |
Family
ID=65016047
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202000011SA SG11202000011SA (en) | 2017-07-21 | 2018-05-17 | Magnetic tunnel junctions suitable for high temperature thermal processing |
Country Status (8)
Country | Link |
---|---|
US (3) | US10255935B2 (en) |
EP (1) | EP3656003A4 (en) |
JP (1) | JP7133613B2 (en) |
KR (1) | KR102512558B1 (en) |
CN (2) | CN117750869A (en) |
SG (1) | SG11202000011SA (en) |
TW (2) | TWI826026B (en) |
WO (1) | WO2019018051A1 (en) |
Families Citing this family (34)
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US10255935B2 (en) | 2017-07-21 | 2019-04-09 | Applied Materials, Inc. | Magnetic tunnel junctions suitable for high temperature thermal processing |
US10636964B2 (en) * | 2018-03-30 | 2020-04-28 | Applied Materials, Inc. | Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy |
US10957849B2 (en) | 2018-05-24 | 2021-03-23 | Applied Materials, Inc. | Magnetic tunnel junctions with coupling-pinning layer lattice matching |
US10910557B2 (en) | 2018-09-14 | 2021-02-02 | Applied Materials, Inc. | Apparatus and methods of fabricating a magneto-resistive random access memory (MRAM) device |
CN111816760B (en) * | 2019-04-11 | 2023-07-14 | 上海磁宇信息科技有限公司 | Magnetic memory cell of magnetic random access memory and forming method thereof |
US11456411B2 (en) * | 2019-07-02 | 2022-09-27 | HeFeChip Corporation Limited | Method for fabricating magnetic tunneling junction element with a composite capping layer |
WO2021011144A1 (en) * | 2019-07-16 | 2021-01-21 | Applied Materials, Inc. | Magnetic tunnel junction stack with data retention |
US11049537B2 (en) | 2019-07-29 | 2021-06-29 | Applied Materials, Inc. | Additive patterning of semiconductor film stacks |
JP2021044429A (en) * | 2019-09-12 | 2021-03-18 | キオクシア株式会社 | Magnetic storage device |
CN112635655A (en) * | 2019-10-08 | 2021-04-09 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction covering layer and manufacturing process thereof |
CN112635652B (en) * | 2019-10-08 | 2023-05-26 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure of magnetic random access memory |
CN112635651A (en) * | 2019-10-08 | 2021-04-09 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure and magnetic random access memory |
CN112652702B (en) * | 2019-10-10 | 2023-12-22 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure of magnetic random access memory |
CN112652709A (en) * | 2019-10-10 | 2021-04-13 | 上海磁宇信息科技有限公司 | Seed layer forming method of magnetic tunnel junction |
CN112736193A (en) * | 2019-10-14 | 2021-04-30 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure and magnetic random access memory thereof |
CN112736194A (en) * | 2019-10-14 | 2021-04-30 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure and magnetic random access memory |
US11522126B2 (en) * | 2019-10-14 | 2022-12-06 | Applied Materials, Inc. | Magnetic tunnel junctions with protection layers |
CN112864308B (en) * | 2019-11-12 | 2023-04-28 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure and magnetic random access memory |
CN112802959A (en) * | 2019-11-13 | 2021-05-14 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure and magnetic random access memory |
US11404632B2 (en) | 2019-11-22 | 2022-08-02 | Western Digital Technologies, Inc. | Magnetoresistive memory device including a magnesium containing dust layer |
US11361805B2 (en) | 2019-11-22 | 2022-06-14 | Western Digital Technologies, Inc. | Magnetoresistive memory device including a reference layer side dielectric spacer layer |
US11005034B1 (en) | 2019-11-22 | 2021-05-11 | Western Digital Technologies, Inc. | Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same |
US10991407B1 (en) | 2019-11-22 | 2021-04-27 | Western Digital Technologies, Inc. | Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same |
US11871679B2 (en) | 2021-06-07 | 2024-01-09 | Western Digital Technologies, Inc. | Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same |
US11056640B2 (en) | 2019-11-22 | 2021-07-06 | Western Digital Technologies, Inc. | Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same |
US11404193B2 (en) | 2019-11-22 | 2022-08-02 | Western Digital Technologies, Inc. | Magnetoresistive memory device including a magnesium containing dust layer |
US11839162B2 (en) | 2019-11-22 | 2023-12-05 | Western Digital Technologies, Inc. | Magnetoresistive memory device including a plurality of reference layers |
CN112928203B (en) * | 2019-12-05 | 2023-04-07 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure of multilayer covering layer and magnetic random access memory |
CN112928204B (en) * | 2019-12-05 | 2023-06-02 | 上海磁宇信息科技有限公司 | Capping layer structure unit for improving vertical anisotropy of free layer of magnetic tunnel junction |
CN113013325B (en) * | 2019-12-19 | 2023-04-07 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction unit with leakage magnetic field balance layer and magnetic random access memory |
CN113140670A (en) * | 2020-01-16 | 2021-07-20 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction vertical antiferromagnetic layer and random access memory |
CN113346007A (en) * | 2020-03-02 | 2021-09-03 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure and magnetic random access memory thereof |
US11887640B2 (en) | 2021-06-07 | 2024-01-30 | Western Digital Technologies, Inc. | Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same |
US11889702B2 (en) | 2021-06-07 | 2024-01-30 | Western Digital Technologies, Inc. | Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same |
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US6574079B2 (en) * | 2000-11-09 | 2003-06-03 | Tdk Corporation | Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys |
US6831312B2 (en) | 2002-08-30 | 2004-12-14 | Freescale Semiconductor, Inc. | Amorphous alloys for magnetic devices |
US7449345B2 (en) * | 2004-06-15 | 2008-11-11 | Headway Technologies, Inc. | Capping structure for enhancing dR/R of the MTJ device |
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FR2976396B1 (en) * | 2011-06-07 | 2013-07-12 | Commissariat Energie Atomique | MAGNETIC STACK AND MEMORY POINT COMPRISING SUCH A STACK |
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KR101596584B1 (en) * | 2014-07-15 | 2016-02-24 | 한양대학교 산학협력단 | Structure for magnetic tunneling junction and magnetic tunneling junction and magnetic random access memory having them |
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US9647204B2 (en) | 2014-12-05 | 2017-05-09 | International Business Machines Corporation | Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer |
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KR101739640B1 (en) | 2015-02-23 | 2017-05-24 | 고려대학교 산학협력단 | Multilayered magnetic thin film stack and nonvolatile memory device having the same |
US10580964B2 (en) * | 2015-03-18 | 2020-03-03 | Industry-University Cooperation Foundation Hanyang University | Memory device |
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US9337415B1 (en) * | 2015-03-20 | 2016-05-10 | HGST Netherlands B.V. | Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy |
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US11245069B2 (en) | 2015-07-14 | 2022-02-08 | Applied Materials, Inc. | Methods for forming structures with desired crystallinity for MRAM applications |
JP6806375B2 (en) * | 2015-11-18 | 2021-01-06 | 国立大学法人東北大学 | Magnetic tunnel junction element and magnetic memory |
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US10255935B2 (en) | 2017-07-21 | 2019-04-09 | Applied Materials, Inc. | Magnetic tunnel junctions suitable for high temperature thermal processing |
-
2018
- 2018-01-04 US US15/862,301 patent/US10255935B2/en active Active
- 2018-05-17 SG SG11202000011SA patent/SG11202000011SA/en unknown
- 2018-05-17 JP JP2020502375A patent/JP7133613B2/en active Active
- 2018-05-17 WO PCT/US2018/033262 patent/WO2019018051A1/en unknown
- 2018-05-17 CN CN202410030084.7A patent/CN117750869A/en active Pending
- 2018-05-17 KR KR1020207004695A patent/KR102512558B1/en active IP Right Grant
- 2018-05-17 EP EP18835329.6A patent/EP3656003A4/en active Pending
- 2018-05-17 CN CN201880036108.2A patent/CN110692144B/en active Active
- 2018-06-08 TW TW111137483A patent/TWI826026B/en active
- 2018-06-08 TW TW107119795A patent/TWI782038B/en active
-
2019
- 2019-02-11 US US16/272,183 patent/US10622011B2/en active Active
-
2020
- 2020-01-27 US US16/773,232 patent/US11251364B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201909459A (en) | 2019-03-01 |
TWI782038B (en) | 2022-11-01 |
WO2019018051A1 (en) | 2019-01-24 |
EP3656003A1 (en) | 2020-05-27 |
KR20200022516A (en) | 2020-03-03 |
EP3656003A4 (en) | 2021-09-22 |
JP2020527865A (en) | 2020-09-10 |
TW202306207A (en) | 2023-02-01 |
CN117750869A (en) | 2024-03-22 |
US20190027169A1 (en) | 2019-01-24 |
US20190172485A1 (en) | 2019-06-06 |
US10255935B2 (en) | 2019-04-09 |
TWI826026B (en) | 2023-12-11 |
US10622011B2 (en) | 2020-04-14 |
KR102512558B1 (en) | 2023-03-21 |
US20200160884A1 (en) | 2020-05-21 |
JP7133613B2 (en) | 2022-09-08 |
CN110692144A (en) | 2020-01-14 |
US11251364B2 (en) | 2022-02-15 |
CN110692144B (en) | 2024-01-30 |
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