SG11201912467XA - Lower electrode mechanism and reaction chamber - Google Patents

Lower electrode mechanism and reaction chamber

Info

Publication number
SG11201912467XA
SG11201912467XA SG11201912467XA SG11201912467XA SG11201912467XA SG 11201912467X A SG11201912467X A SG 11201912467XA SG 11201912467X A SG11201912467X A SG 11201912467XA SG 11201912467X A SG11201912467X A SG 11201912467XA SG 11201912467X A SG11201912467X A SG 11201912467XA
Authority
SG
Singapore
Prior art keywords
lower electrode
reaction chamber
electrode mechanism
chamber
reaction
Prior art date
Application number
SG11201912467XA
Other languages
English (en)
Inventor
Yahui Huang
Gang Wei
Yicheng Li
Xingfei Mao
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11201912467XA publication Critical patent/SG11201912467XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
SG11201912467XA 2017-06-19 2017-11-15 Lower electrode mechanism and reaction chamber SG11201912467XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710464985.7A CN107093545B (zh) 2017-06-19 2017-06-19 反应腔室的下电极机构及反应腔室
PCT/CN2017/111125 WO2018233192A1 (zh) 2017-06-19 2017-11-15 一种下电极机构及反应腔室

Publications (1)

Publication Number Publication Date
SG11201912467XA true SG11201912467XA (en) 2020-01-30

Family

ID=59639755

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201912467XA SG11201912467XA (en) 2017-06-19 2017-11-15 Lower electrode mechanism and reaction chamber

Country Status (6)

Country Link
US (1) US11410833B2 (ja)
JP (1) JP6914374B2 (ja)
KR (1) KR102166661B1 (ja)
CN (1) CN107093545B (ja)
SG (1) SG11201912467XA (ja)
WO (1) WO2018233192A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107093545B (zh) * 2017-06-19 2019-05-31 北京北方华创微电子装备有限公司 反应腔室的下电极机构及反应腔室
CN109994356B (zh) * 2017-12-29 2022-03-22 北京北方华创微电子装备有限公司 反应腔室和半导体加工设备
CN108346554A (zh) * 2018-04-24 2018-07-31 西南林业大学 一种等离子体刻蚀与沉积设备及方法
CN113421812B (zh) * 2021-06-23 2024-03-26 北京北方华创微电子装备有限公司 半导体工艺设备及其承载装置
CN114121584B (zh) * 2021-11-22 2024-04-16 北京北方华创微电子装备有限公司 下电极组件、半导体加工设备及下电极防冷凝方法
CN115692263B (zh) * 2022-10-31 2023-06-16 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备
CN115881617B (zh) * 2022-12-25 2023-10-24 北京屹唐半导体科技股份有限公司 载片台及反应腔室

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TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US6616767B2 (en) * 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
KR100262274B1 (ko) * 1997-11-11 2000-07-15 전주범 전자 렌지용 초고주파 발진관의 그리드 조립체
US6395095B1 (en) * 1999-06-15 2002-05-28 Tokyo Electron Limited Process apparatus and method for improved plasma processing of a substrate
KR100629065B1 (ko) * 1999-09-14 2006-09-27 주식회사 엘지생활건강 폴리에톡실레이티드 비타민 씨 유도체를 함유하는 피부 미백용 화장료 조성물
JP4660926B2 (ja) 2001-01-09 2011-03-30 東京エレクトロン株式会社 枚葉式の処理装置
US20050022736A1 (en) * 2003-07-29 2005-02-03 Lam Research Inc., A Delaware Corporation Method for balancing return currents in plasma processing apparatus
US20050066902A1 (en) * 2003-09-26 2005-03-31 Tokyo Electron Limited Method and apparatus for plasma processing
CN100499958C (zh) * 2005-12-09 2009-06-10 北京北方微电子基地设备工艺研究中心有限责任公司 用于静电卡盘的信号传输装置
JP2007258585A (ja) * 2006-03-24 2007-10-04 Tokyo Electron Ltd 基板載置機構および基板処理装置
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CN103337444A (zh) * 2013-06-08 2013-10-02 天通吉成机器技术有限公司 一种干法等离子刻蚀机的反应腔
JP6043968B2 (ja) * 2013-10-30 2016-12-14 パナソニックＩｐマネジメント株式会社 プラズマ処理方法並びに電子デバイスの製造方法
CN105632967B (zh) * 2014-10-28 2018-08-24 北京北方华创微电子装备有限公司 半导体加工设备
CN106158717B (zh) * 2015-03-31 2019-08-23 北京北方华创微电子装备有限公司 机械卡盘及半导体加工设备
CN106816397A (zh) * 2015-12-01 2017-06-09 北京北方微电子基地设备工艺研究中心有限责任公司 下电极组件及半导体加工设备
CN207074639U (zh) * 2017-06-19 2018-03-06 北京北方华创微电子装备有限公司 反应腔室的下电极机构及反应腔室
CN107093545B (zh) * 2017-06-19 2019-05-31 北京北方华创微电子装备有限公司 反应腔室的下电极机构及反应腔室

Also Published As

Publication number Publication date
CN107093545A (zh) 2017-08-25
CN107093545B (zh) 2019-05-31
JP2020524408A (ja) 2020-08-13
KR102166661B1 (ko) 2020-10-16
JP6914374B2 (ja) 2021-08-04
US11410833B2 (en) 2022-08-09
KR20190126382A (ko) 2019-11-11
WO2018233192A1 (zh) 2018-12-27
US20200321198A1 (en) 2020-10-08

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