SG11201909576XA - Large single crystal diamond and a method of producing the same - Google Patents

Large single crystal diamond and a method of producing the same

Info

Publication number
SG11201909576XA
SG11201909576XA SG11201909576XA SG11201909576XA SG 11201909576X A SG11201909576X A SG 11201909576XA SG 11201909576X A SG11201909576X A SG 11201909576XA SG 11201909576X A SG11201909576X A SG 11201909576XA
Authority
SG
Singapore
Prior art keywords
single crystal
international
crystal diamond
diamond
producing
Prior art date
Application number
Inventor
Devi Misra
Original Assignee
Sunset Peak International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunset Peak International Ltd filed Critical Sunset Peak International Ltd
Publication of SG11201909576XA publication Critical patent/SG11201909576XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 01 November 2018 (01.11.2018) WIPO I PCT ill 1111u°111110111sOHolo mooloin mo Imo oimIE (10) International Publication Number WO 2018/199845 Al (51) International Patent Classification: CO3B 29/04 (2006.01) CO1B 32/25 (2017.01) C3OB 25/20 (2006.01) CO1B 32/26 (2017.01) BO1J 3/06 (2006.01) (21) International Application Number: PCT/SG2018/000003 (22) International Filing Date: 27 April 2018 (27.04.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 10201703436V 26 April 2017 (26.04.2017) SG (71) Applicant: HA TECHNOLOGIES PTE LTD [SG/SG]; c/o 65, OCBC Centre, Chulia Street, #38-02, Singapore 049513 (SG). (72) Inventor: MISRA, Devi, Shanker; c/o 65, OCBC Centre, Chulia Street #38-02, Singapore 049513 (SG). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — of inventorship (Rule 4.17(iv)) (54) Title: LARGE SINGLE CRYSTAL DIAMOND AND A METHOD OF PRODUCING THE SAME 111 120 Z Side X 110 120 130 Y Top W O 20 18/1998 45 Al FIG. 1: Top and side views of a grown diamond (57) : A method of producing a large single crystal diamond comprising of: (i) arranging two or more single crystal diamond substrates adjacent to one another in a diamond growth chamber, wherein each single crystal diamond substrate include at least 2 adjacent surfaces having different crystallographic orientations, (ii) using a diamond growth process, growing the single crystal diamond substrates in an upward growth direction as well as in a lateral growth direction. [Continued on next page] WO 2018/199845 Al MIDEDIMOMMIDIREIEDEMIEHMEHEMOVOIMIE Published: with international search report (Art. 21(3)) with information concerning request for restoration of the right of priority in respect of one or more priority claims (Rules 26bis.3 and 48.2(b)(vii))
SG11201909576X 2017-04-26 2018-04-27 Large single crystal diamond and a method of producing the same SG11201909576XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201703436V 2017-04-26
PCT/SG2018/000003 WO2018199845A1 (en) 2017-04-26 2018-04-27 Large single crystal diamond and a method of producing the same

Publications (1)

Publication Number Publication Date
SG11201909576XA true SG11201909576XA (en) 2019-11-28

Family

ID=63917741

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909576X SG11201909576XA (en) 2017-04-26 2018-04-27 Large single crystal diamond and a method of producing the same

Country Status (8)

Country Link
US (1) US20200199778A1 (en)
EP (1) EP3615482A4 (en)
JP (1) JP7256753B2 (en)
KR (1) KR102372059B1 (en)
CN (1) CN110914204B (en)
SG (1) SG11201909576XA (en)
TW (1) TWI706061B (en)
WO (1) WO2018199845A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021030557A1 (en) * 2019-08-13 2021-02-18 Pt Creations Synthetic diamond jewelry and fabrication method thereof
CN112030228B (en) * 2020-09-11 2021-05-18 哈尔滨工业大学 Bridging temperature control method for co-growth of multiple MPCVD single crystal diamonds
JP2022184075A (en) * 2021-05-31 2022-12-13 国立研究開発法人産業技術総合研究所 Joined body of mosaic diamond wafer and heterogeneous semiconductor and method for manufacturing the same, and mosaic diamond wafer for joined body with heterogeneous semiconductor
CN114032613B (en) * 2021-10-14 2023-10-31 吉林大学 Method for improving quality of splicing seam of diamond monocrystal grown by splicing method

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GB8810113D0 (en) * 1988-04-28 1988-06-02 Jones B L Bonded composite
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
JPH04139091A (en) * 1990-09-28 1992-05-13 Toshiba Corp Production of diamond
JP3350992B2 (en) * 1993-02-05 2002-11-25 住友電気工業株式会社 Diamond synthesis method
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
US6158952A (en) * 1994-08-31 2000-12-12 Roberts; Ellis Earl Oriented synthetic crystal assemblies
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
JP3540256B2 (en) 2000-07-25 2004-07-07 マイクロ・ダイヤモンド株式会社 Drill with single crystal diamond at its tip
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
JP4385764B2 (en) * 2003-12-26 2009-12-16 住友電気工業株式会社 Method for producing diamond single crystal substrate
JP4365251B2 (en) 2004-03-31 2009-11-18 旭ダイヤモンド工業株式会社 Diamond scriber and method of manufacturing diamond scriber
JP4461218B2 (en) 2005-05-31 2010-05-12 並木精密宝石株式会社 Carbon material processing method
EP1895579B1 (en) * 2005-06-20 2016-06-15 Nippon Telegraph And Telephone Corporation Diamond semiconductor element and process for producing the same
EP1957689B1 (en) * 2005-12-09 2011-04-20 Element Six Technologies (PTY) LTD High crystalline quality synthetic diamond
SG157973A1 (en) * 2008-06-18 2010-01-29 Indian Inst Technology Bombay Method for growing monocrystalline diamonds
JP4849691B2 (en) * 2008-12-25 2012-01-11 独立行政法人産業技術総合研究所 Large area diamond crystal substrate and manufacturing method thereof
JP5621994B2 (en) 2009-12-16 2014-11-12 独立行政法人産業技術総合研究所 Mosaic diamond manufacturing method
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Also Published As

Publication number Publication date
EP3615482A4 (en) 2020-11-25
TW201842243A (en) 2018-12-01
CN110914204B (en) 2022-06-03
KR20190134726A (en) 2019-12-04
CN110914204A (en) 2020-03-24
TWI706061B (en) 2020-10-01
US20200199778A1 (en) 2020-06-25
KR102372059B1 (en) 2022-03-07
JP7256753B2 (en) 2023-04-12
WO2018199845A1 (en) 2018-11-01
EP3615482A1 (en) 2020-03-04
JP2020518537A (en) 2020-06-25

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