SG11201800522PA - Diamond die - Google Patents

Diamond die

Info

Publication number
SG11201800522PA
SG11201800522PA SG11201800522PA SG11201800522PA SG11201800522PA SG 11201800522P A SG11201800522P A SG 11201800522PA SG 11201800522P A SG11201800522P A SG 11201800522PA SG 11201800522P A SG11201800522P A SG 11201800522PA SG 11201800522P A SG11201800522P A SG 11201800522PA
Authority
SG
Singapore
Prior art keywords
diamond die
diamond
die
Prior art date
Application number
SG11201800522PA
Inventor
Makoto Yukawa
Bunya Suemitsu
Takuya Kinoshita
Shigetoshi Sumimoto
Yutaka Kobayashi
Akihiko Ueda
Natsuo Tatsumi
Yoshiki Nishibayashi
Hitoshi Sumiya
Original Assignee
Sumitomo Electric Hardmetal Corp
Sumitomo Electric Industries
Almt Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Hardmetal Corp, Sumitomo Electric Industries, Almt Corp filed Critical Sumitomo Electric Hardmetal Corp
Publication of SG11201800522PA publication Critical patent/SG11201800522PA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C3/00—Profiling tools for metal drawing; Combinations of dies and mandrels
    • B21C3/02—Dies; Selection of material therefor; Cleaning thereof
    • B21C3/025—Dies; Selection of material therefor; Cleaning thereof comprising diamond parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C3/00—Profiling tools for metal drawing; Combinations of dies and mandrels
    • B21C3/02—Dies; Selection of material therefor; Cleaning thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C37/00—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape
    • B21C37/04—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire
    • B21C37/047—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire of fine wires
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Metal Extraction Processes (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201800522PA 2015-07-22 2016-07-22 Diamond die SG11201800522PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015145027 2015-07-22
PCT/JP2016/071600 WO2017014309A1 (en) 2015-07-22 2016-07-22 Diamond die

Publications (1)

Publication Number Publication Date
SG11201800522PA true SG11201800522PA (en) 2018-02-27

Family

ID=57834332

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201800522PA SG11201800522PA (en) 2015-07-22 2016-07-22 Diamond die

Country Status (9)

Country Link
US (1) US11007558B2 (en)
EP (1) EP3326729B1 (en)
JP (1) JP6545264B2 (en)
KR (1) KR20180033529A (en)
CN (1) CN107848002B (en)
ES (1) ES2777627T3 (en)
MX (1) MX2018000741A (en)
SG (1) SG11201800522PA (en)
WO (1) WO2017014309A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI706061B (en) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 Large single crystal diamond and a method of producing the same
EP3815806B1 (en) * 2018-06-27 2023-11-29 Sumitomo Electric Hardmetal Corp. Tool with through hole comprising a diamond component
WO2022137429A1 (en) * 2020-12-24 2022-06-30 住友電工ハードメタル株式会社 Method for producing diamond tool intermediate and method for determining single crystal diamond

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59229227A (en) 1983-06-08 1984-12-22 Sumitomo Electric Ind Ltd Die using single crystal of synthetic diamond
DE69016240T3 (en) 1989-04-06 1999-03-11 Sumitomo Electric Industries Diamond for dressing device
JPH0712485B2 (en) 1989-04-06 1995-02-15 住友電気工業株式会社 Material for wire drawing die and wire drawing die using the material
US6007916A (en) 1989-04-06 1999-12-28 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond for wiring drawing dies and process for producing the same
JPH04127913A (en) 1990-09-20 1992-04-28 Asahi Daiyamondo Kogyo Kk Diamond die
US5571236A (en) 1992-08-28 1996-11-05 Sumitomo Electric Industries, Ltd. Diamond wire drawing die
JPH06170435A (en) 1992-08-28 1994-06-21 Sumitomo Electric Ind Ltd Diamond drawing die and manufacture thereof
US5636545A (en) * 1995-07-07 1997-06-10 General Electric Company Composite diamond wire die
JP3554700B2 (en) * 2000-09-27 2004-08-18 株式会社アライドマテリアル Diamond dies
GB0303860D0 (en) 2003-02-19 2003-03-26 Element Six Ltd CVD diamond in wear applications
JP5323492B2 (en) * 2005-12-09 2013-10-23 エレメント シックス テクノロジーズ （プロプライアタリー） リミテッド Synthetic diamond with high crystal quality
ATE506464T1 (en) 2005-12-09 2011-05-15 Element Six Technologies Pty Ltd SYNTHETIC DIAMOND WITH HIGH CRYSTALLINE QUALITY
CN101547757A (en) 2007-03-15 2009-09-30 联合材料公司 Diamond dice and method for producing wire using diamond dice
KR102392424B1 (en) 2014-07-22 2022-05-02 스미토모덴키고교가부시키가이샤 Single-crystal diamond and method for manufacturing same, tool including single-crystal diamond, and component including single-crystal diamond

Also Published As

Publication number Publication date
MX2018000741A (en) 2018-05-15
ES2777627T3 (en) 2020-08-05
CN107848002A (en) 2018-03-27
US11007558B2 (en) 2021-05-18
CN107848002B (en) 2020-03-13
US20180207697A1 (en) 2018-07-26
KR20180033529A (en) 2018-04-03
EP3326729B1 (en) 2020-02-26
EP3326729A4 (en) 2019-02-20
WO2017014309A1 (en) 2017-01-26
JPWO2017014309A1 (en) 2018-06-14
EP3326729A1 (en) 2018-05-30
JP6545264B2 (en) 2019-07-17

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