SG11201909467PA - Method for manufacturing bonded wafer - Google Patents

Method for manufacturing bonded wafer

Info

Publication number
SG11201909467PA
SG11201909467PA SG11201909467PA SG11201909467PA SG 11201909467P A SG11201909467P A SG 11201909467PA SG 11201909467P A SG11201909467P A SG 11201909467PA SG 11201909467P A SG11201909467P A SG 11201909467PA
Authority
SG
Singapore
Prior art keywords
bonded wafer
manufacturing bonded
manufacturing
wafer
bonded
Prior art date
Application number
Inventor
Isao Yokokawa
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of SG11201909467PA publication Critical patent/SG11201909467PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/055—Arrangements for energy or mass analysis magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/201—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated for mounting multiple objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Element Separation (AREA)
SG11201909467P 2017-04-25 2018-02-27 Method for manufacturing bonded wafer SG11201909467PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017086381A JP6686962B2 (en) 2017-04-25 2017-04-25 Method for manufacturing bonded wafer
PCT/JP2018/007254 WO2018198521A1 (en) 2017-04-25 2018-02-27 Method for manufacturing laminated wafer

Publications (1)

Publication Number Publication Date
SG11201909467PA true SG11201909467PA (en) 2019-11-28

Family

ID=63918926

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909467P SG11201909467PA (en) 2017-04-25 2018-02-27 Method for manufacturing bonded wafer

Country Status (8)

Country Link
US (1) US10886163B2 (en)
EP (1) EP3618098B1 (en)
JP (1) JP6686962B2 (en)
KR (1) KR102420831B1 (en)
CN (1) CN110574141B (en)
SG (1) SG11201909467PA (en)
TW (1) TWI735752B (en)
WO (1) WO2018198521A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230287561A1 (en) * 2022-03-14 2023-09-14 Applied Materials, Inc. Variable Rotation Rate Batch Implanter

Family Cites Families (27)

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JPH02123656A (en) 1988-10-31 1990-05-11 Shimadzu Corp Ion implantation device
FR2681472B1 (en) * 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
KR100234533B1 (en) * 1996-10-08 1999-12-15 윤종용 Ion implant system of manufacturing semiconductor device
JPWO2003049189A1 (en) * 2001-12-04 2005-04-21 信越半導体株式会社 Bonded wafer and method for manufacturing bonded wafer
CN102034665B (en) * 2002-06-26 2014-06-25 山米奎普公司 An ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
JP4239676B2 (en) * 2003-05-15 2009-03-18 信越半導体株式会社 SOI wafer and manufacturing method thereof
JP2005166730A (en) 2003-11-28 2005-06-23 Seiko Epson Corp Semiconductor device and its manufacturing method
JP2006324051A (en) * 2005-05-17 2006-11-30 Nissin Ion Equipment Co Ltd Charge particle beam irradiation method and device
JP4625775B2 (en) * 2006-02-17 2011-02-02 株式会社アルバック Ion implanter
TWI435378B (en) 2006-04-26 2014-04-21 Axcelis Tech Inc Dose uniformity correction technique
JP5252867B2 (en) 2007-09-21 2013-07-31 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor substrate
JP2009289948A (en) * 2008-05-29 2009-12-10 Sumco Corp Laminated wafer manufacturing method
JP2010015774A (en) 2008-07-02 2010-01-21 Sumco Corp Ion implantation apparatus
JP5440360B2 (en) 2010-04-26 2014-03-12 信越半導体株式会社 Ion implantation status confirmation method and semiconductor wafer manufacturing method
JP5802436B2 (en) * 2011-05-30 2015-10-28 信越半導体株式会社 Manufacturing method of bonded wafer
DE102011113775B9 (en) * 2011-09-19 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Process for the production of an optoelectronic component
JP5927894B2 (en) * 2011-12-15 2016-06-01 信越半導体株式会社 Manufacturing method of SOI wafer
FR2988516B1 (en) * 2012-03-23 2014-03-07 Soitec Silicon On Insulator IMPROVING IMPROVING METHOD FOR ENHANCED SUBSTRATES
JP5664592B2 (en) * 2012-04-26 2015-02-04 信越半導体株式会社 Manufacturing method of bonded wafer
JP5910352B2 (en) * 2012-06-28 2016-04-27 信越半導体株式会社 Manufacturing method of bonded wafer
JP5888286B2 (en) * 2013-06-26 2016-03-16 信越半導体株式会社 Manufacturing method of bonded wafer
JP6213046B2 (en) * 2013-08-21 2017-10-18 信越半導体株式会社 Manufacturing method of bonded wafer
JP6107709B2 (en) * 2014-03-10 2017-04-05 信越半導体株式会社 Manufacturing method of bonded SOI wafer
JP6036732B2 (en) * 2014-03-18 2016-11-30 信越半導体株式会社 Manufacturing method of bonded wafer
DE102016102865B4 (en) * 2016-02-18 2024-04-25 Infineon Technologies Ag A method for implanting ions into a semiconductor substrate
JP6814081B2 (en) * 2017-03-29 2021-01-13 住友重機械イオンテクノロジー株式会社 Ion implantation device and ion implantation method
JP7132828B2 (en) * 2018-11-13 2022-09-07 住友重機械イオンテクノロジー株式会社 Ion implanter and beam parker

Also Published As

Publication number Publication date
TW201839800A (en) 2018-11-01
TWI735752B (en) 2021-08-11
US10886163B2 (en) 2021-01-05
KR102420831B1 (en) 2022-07-14
US20200203217A1 (en) 2020-06-25
EP3618098A4 (en) 2021-02-17
JP6686962B2 (en) 2020-04-22
WO2018198521A1 (en) 2018-11-01
CN110574141A (en) 2019-12-13
KR20190142341A (en) 2019-12-26
EP3618098A1 (en) 2020-03-04
CN110574141B (en) 2022-11-01
EP3618098B1 (en) 2022-04-27
JP2018186164A (en) 2018-11-22

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