SG11201908892TA - Memory refresh technology and computer system - Google Patents
Memory refresh technology and computer systemInfo
- Publication number
- SG11201908892TA SG11201908892TA SG11201908892TA SG11201908892TA SG 11201908892T A SG11201908892T A SG 11201908892TA SG 11201908892T A SG11201908892T A SG 11201908892TA SG 11201908892T A SG11201908892T A SG 11201908892TA
- Authority
- SG
- Singapore
- Prior art keywords
- memory
- computer system
- refresh
- rank
- memory refresh
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
- G06F13/161—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
- G06F13/1636—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement using refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Human Computer Interaction (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/080640 WO2018188085A1 (zh) | 2017-04-14 | 2017-04-14 | 内存刷新技术及计算机系统 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201908892TA true SG11201908892TA (en) | 2019-11-28 |
Family
ID=63792104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201908892T SG11201908892TA (en) | 2017-04-14 | 2017-04-14 | Memory refresh technology and computer system |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20200066330A1 (ko) |
| EP (1) | EP3605542B1 (ko) |
| JP (1) | JP7043515B2 (ko) |
| KR (1) | KR102258360B1 (ko) |
| CN (1) | CN110546707B (ko) |
| AU (1) | AU2017409368B2 (ko) |
| BR (1) | BR112019021554B1 (ko) |
| CA (1) | CA3058778C (ko) |
| SG (1) | SG11201908892TA (ko) |
| WO (1) | WO2018188085A1 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11244717B2 (en) * | 2019-12-02 | 2022-02-08 | Micron Technology, Inc. | Write operation techniques for memory systems |
| KR20220031793A (ko) | 2020-09-03 | 2022-03-14 | 삼성전자주식회사 | 메모리 장치, 그것을 포함하는 메모리 시스템, 그것을 제어하는 제어기 및 그것의 동작 방법 |
| US11798604B2 (en) * | 2021-09-01 | 2023-10-24 | Dell Products L.P. | Memory architecture having ranks with variable data widths |
| CN113741820B (zh) * | 2021-09-18 | 2023-10-03 | 青岛海信传媒网络技术有限公司 | 一种数据从内存刷新到eMMC存储器的方法及显示设备 |
| US20230236653A1 (en) * | 2022-01-26 | 2023-07-27 | Samsung Electronics Co.,Ltd. | Power reduction for systems having multiple ranks of memory |
| US20230359373A1 (en) * | 2022-05-03 | 2023-11-09 | Qualcomm Incorporated | Selective refresh for memory devices |
| CN115148248B (zh) * | 2022-09-06 | 2022-11-08 | 北京奎芯集成电路设计有限公司 | 基于深度学习的dram刷新方法和装置 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0349094A (ja) * | 1989-07-18 | 1991-03-01 | Toshiba Corp | メモリ制御装置 |
| JPH10149311A (ja) * | 1996-11-20 | 1998-06-02 | Ricoh Co Ltd | メモリ制御装置 |
| JP4154010B2 (ja) * | 1997-07-17 | 2008-09-24 | キヤノン株式会社 | メモリ制御装置およびメモリ制御方法 |
| CN101000798B (zh) * | 2007-01-12 | 2010-05-19 | 威盛电子股份有限公司 | 存储器刷新方法及存储器刷新系统 |
| JPWO2009139109A1 (ja) | 2008-05-13 | 2011-09-15 | パナソニック株式会社 | メモリ制御装置、およびこれを備えた情報処理装置 |
| US8639874B2 (en) * | 2008-12-22 | 2014-01-28 | International Business Machines Corporation | Power management of a spare DRAM on a buffered DIMM by issuing a power on/off command to the DRAM device |
| JP5155221B2 (ja) | 2009-03-11 | 2013-03-06 | ルネサスエレクトロニクス株式会社 | メモリ制御装置 |
| US8489807B2 (en) * | 2010-12-03 | 2013-07-16 | International Business Machines Corporation | Techniques for performing refresh operations in high-density memories |
| US8775725B2 (en) * | 2010-12-06 | 2014-07-08 | Intel Corporation | Memory device refresh commands on the fly |
| US8539146B2 (en) * | 2011-11-28 | 2013-09-17 | International Business Machines Corporation | Apparatus for scheduling memory refresh operations including power states |
| US9269418B2 (en) * | 2012-02-06 | 2016-02-23 | Arm Limited | Apparatus and method for controlling refreshing of data in a DRAM |
| US8909874B2 (en) * | 2012-02-13 | 2014-12-09 | International Business Machines Corporation | Memory reorder queue biasing preceding high latency operations |
| US9196347B2 (en) * | 2013-03-14 | 2015-11-24 | International Business Machines Corporation | DRAM controller for variable refresh operation timing |
| CN104143355B (zh) * | 2013-05-09 | 2018-01-23 | 华为技术有限公司 | 一种刷新动态随机存取存储器的方法和装置 |
| CN108231109B (zh) * | 2014-06-09 | 2021-01-29 | 华为技术有限公司 | 动态随机存取存储器dram的刷新方法、设备以及系统 |
| US9685219B2 (en) * | 2015-05-13 | 2017-06-20 | Samsung Electronics Co., Ltd. | Semiconductor memory device for deconcentrating refresh commands and system including the same |
| US9576637B1 (en) * | 2016-05-25 | 2017-02-21 | Advanced Micro Devices, Inc. | Fine granularity refresh |
| CN106875971B (zh) * | 2017-02-16 | 2021-01-22 | 上海兆芯集成电路有限公司 | 动态随机存取存储器控制器及其控制方法 |
| JP6780897B2 (ja) | 2017-04-14 | 2020-11-04 | ホアウェイ・テクノロジーズ・カンパニー・リミテッド | メモリリフレッシュ技術及びコンピュータシステム |
| US10236035B1 (en) * | 2017-12-04 | 2019-03-19 | Nanya Technology Corporation | DRAM memory device adjustable refresh rate method to alleviate effects of row hammer events |
| US10969997B2 (en) * | 2018-11-07 | 2021-04-06 | Intel Corporation | Memory controller that filters a count of row activate commands collectively sent to a set of memory banks |
-
2017
- 2017-04-14 EP EP17905894.6A patent/EP3605542B1/en active Active
- 2017-04-14 CN CN201780089579.5A patent/CN110546707B/zh active Active
- 2017-04-14 BR BR112019021554-9A patent/BR112019021554B1/pt active IP Right Grant
- 2017-04-14 AU AU2017409368A patent/AU2017409368B2/en active Active
- 2017-04-14 SG SG11201908892T patent/SG11201908892TA/en unknown
- 2017-04-14 JP JP2019555980A patent/JP7043515B2/ja active Active
- 2017-04-14 CA CA3058778A patent/CA3058778C/en active Active
- 2017-04-14 KR KR1020197030437A patent/KR102258360B1/ko active IP Right Grant
- 2017-04-14 WO PCT/CN2017/080640 patent/WO2018188085A1/zh unknown
-
2019
- 2019-10-11 US US16/599,980 patent/US20200066330A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CA3058778A1 (en) | 2018-10-18 |
| BR112019021554A2 (pt) | 2020-05-12 |
| EP3605542B1 (en) | 2021-07-21 |
| JP2020517024A (ja) | 2020-06-11 |
| KR102258360B1 (ko) | 2021-05-31 |
| EP3605542A1 (en) | 2020-02-05 |
| BR112019021554B1 (pt) | 2024-02-27 |
| KR20190126888A (ko) | 2019-11-12 |
| AU2017409368B2 (en) | 2022-07-07 |
| US20200066330A1 (en) | 2020-02-27 |
| CA3058778C (en) | 2023-02-21 |
| CN110546707A (zh) | 2019-12-06 |
| WO2018188085A1 (zh) | 2018-10-18 |
| EP3605542A4 (en) | 2020-05-20 |
| AU2017409368A1 (en) | 2019-10-24 |
| CN110546707B (zh) | 2021-10-19 |
| JP7043515B2 (ja) | 2022-03-29 |
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