SG11201908769TA - Vertical gallium nitride schottky diode - Google Patents

Vertical gallium nitride schottky diode

Info

Publication number
SG11201908769TA
SG11201908769TA SG11201908769TA SG11201908769TA SG 11201908769T A SG11201908769T A SG 11201908769TA SG 11201908769T A SG11201908769T A SG 11201908769TA SG 11201908769T A SG11201908769T A SG 11201908769TA
Authority
SG
Singapore
Prior art keywords
gallium nitride
epitaxial
nitride layer
international
type gallium
Prior art date
Application number
Inventor
Vladimir Odnoblyudov
Ozgur Aktas
Original Assignee
Qromis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qromis Inc filed Critical Qromis Inc
Publication of SG11201908769TA publication Critical patent/SG11201908769TA/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66212—Schottky diodes
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
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    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
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    • H01L21/02389—Nitrides
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    • H01L21/02439—Materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

WO 18/ 18337 4 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 04 October 2018 (04.10.2018) W I PO I PCT IiiimmoimiolollmonolomoniinociloimimiovoimIE (10) International Publication Number WO 2018/183374 Al (51) International Patent Classification: HOlL 29/872 (2006.01) HOlL 29/47 (2006.01) HO1L 29/45 (2006.01) (21) International Application Number: PCT/US2018/024629 (22) International Filing Date: 27 March 2018 (27.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/478,483 29 March 2017 (29.03.2017) US 15/936,305 26 March 2018 (26.03.2018) US (71) Applicant: QROMIS, INC. [US/US]; 2306 Walsh Av- enue, Santa Clara, California 95051 (US). (72) Inventors: ODNOBLYUDOV, Vladimir; c/o Qromis, Inc., 2306 Walsh Avenue, Santa Clara, California 95032 (US). AKTAS, Ozgur; c/o Qromis, Inc., 2306 Walsh Av- enue, Santa Clara, California 95051 (US). (74) Agent: LIU, Rong et al.; KILPATRICK TOWNSEND & STOCKTON LLP, Mailstop: IP Docketing-22, 1100 Peachtree Street, Suite 2800, Atlanta, Georgia 30309 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 2 I (3)) (54) Title: VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE (57) : A vertical Schottky diode includes an ohmic contact, a first epitaxial N-type gallium nitride layer physically contacting the ohmic contact and having a first doping concentration, and a sec- ond epitaxial N-type gallium nitride layer physically contacting the 520 518 first epitaxial N-type gallium nitride layer and having a second dop- ing concentration that is lower than the first doping concentration. 522 The vertical Schottky diode further includes a first edge termination region and a second edge termination region coupled to the second 510-1 516 epitaxial N-type gallium nitride layer and separated from each other 512 by a portion of the second epitaxial N-type gallium nitride layer, and a Schottky contact coupled to the portion of the second epitaxial N- type gallium nitride layer, and to the first edge termination region and the second edge termination region. Fla 5 500
SG11201908769T 2017-03-29 2018-03-27 Vertical gallium nitride schottky diode SG11201908769TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762478483P 2017-03-29 2017-03-29
US15/936,305 US10411108B2 (en) 2017-03-29 2018-03-26 Vertical gallium nitride Schottky diode
PCT/US2018/024629 WO2018183374A1 (en) 2017-03-29 2018-03-27 Vertical gallium nitride schottky diode

Publications (1)

Publication Number Publication Date
SG11201908769TA true SG11201908769TA (en) 2019-10-30

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ID=63670882

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Application Number Title Priority Date Filing Date
SG11201908769T SG11201908769TA (en) 2017-03-29 2018-03-27 Vertical gallium nitride schottky diode

Country Status (8)

Country Link
US (2) US10411108B2 (en)
EP (1) EP3602635A4 (en)
JP (1) JP7190245B2 (en)
KR (1) KR20190133232A (en)
CN (1) CN110582852B (en)
SG (1) SG11201908769TA (en)
TW (1) TWI803485B (en)
WO (1) WO2018183374A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102275146B1 (en) * 2019-05-20 2021-07-08 파워큐브세미 (주) Schottky diode and method for fabricating the same
CN110676308B (en) * 2019-10-12 2022-12-20 中国电子科技集团公司第十三研究所 Preparation method of Schottky diode
CN111146294B (en) * 2019-12-05 2023-11-07 中国电子科技集团公司第十三研究所 Schottky diode and preparation method thereof
CN114864760A (en) * 2021-02-03 2022-08-05 厦门三安光电有限公司 Micro light-emitting diode and display panel
CN114141884A (en) * 2021-12-14 2022-03-04 上海集成电路制造创新中心有限公司 Reconfigurable schottky diode
WO2024137722A2 (en) * 2022-12-19 2024-06-27 Peiching Ling Semiconductor structures and memory devices and methods for manufacturing the same

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6497763B2 (en) * 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
JP2002305309A (en) 2001-02-01 2002-10-18 Hitachi Ltd Semiconductor device and its manufacturing method
JP5037003B2 (en) * 2005-11-25 2012-09-26 一般財団法人電力中央研究所 Schottky barrier diode and method of using the same
JP2007305609A (en) * 2006-04-10 2007-11-22 Matsushita Electric Ind Co Ltd Semiconductor device
US7595241B2 (en) 2006-08-23 2009-09-29 General Electric Company Method for fabricating silicon carbide vertical MOSFET devices
TW200921776A (en) * 2007-11-09 2009-05-16 Powertech Technology Inc Wafer cutting method, die structure and its multi-die package method
JP5713546B2 (en) 2008-09-08 2015-05-07 三菱電機株式会社 Semiconductor device
FR2977260B1 (en) 2011-06-30 2013-07-19 Soitec Silicon On Insulator PROCESS FOR PRODUCING A THICK EPITAXIAL LAYER OF GALLIUM NITRIDE ON A SILICON SUBSTRATE OR THE LIKE AND LAYER OBTAINED BY SAID METHOD
US9099547B2 (en) * 2011-10-04 2015-08-04 Infineon Technologies Ag Testing process for semiconductor devices
US8772901B2 (en) 2011-11-11 2014-07-08 Alpha And Omega Semiconductor Incorporated Termination structure for gallium nitride schottky diode
US8927999B2 (en) 2011-11-21 2015-01-06 Avogy, Inc. Edge termination by ion implantation in GaN
US8716716B2 (en) * 2011-12-22 2014-05-06 Avogy, Inc. Method and system for junction termination in GaN materials using conductivity modulation
JP5973470B2 (en) * 2012-01-30 2016-08-23 パナソニック株式会社 Semiconductor device
JP2013232564A (en) 2012-04-27 2013-11-14 National Institute Of Advanced Industrial & Technology Semiconductor device and semiconductor device manufacturing method
US8981432B2 (en) * 2012-08-10 2015-03-17 Avogy, Inc. Method and system for gallium nitride electronic devices using engineered substrates
US20140048903A1 (en) * 2012-08-15 2014-02-20 Avogy, Inc. Method and system for edge termination in gan materials by selective area implantation doping
US8952481B2 (en) 2012-11-20 2015-02-10 Cree, Inc. Super surge diodes
WO2014080820A1 (en) 2012-11-26 2014-05-30 住友電気工業株式会社 Schottky barrier diode and method for manufacturing same
US9318624B2 (en) 2012-11-27 2016-04-19 Cree, Inc. Schottky structure employing central implants between junction barrier elements
US8937317B2 (en) 2012-12-28 2015-01-20 Avogy, Inc. Method and system for co-packaging gallium nitride electronics
US9082692B2 (en) 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
JP2015026669A (en) 2013-07-25 2015-02-05 住友電気工業株式会社 Nitride semiconductor device
JP5818853B2 (en) * 2013-10-15 2015-11-18 株式会社トクヤマ Vertical nitride semiconductor device using n-type aluminum nitride single crystal substrate
WO2016017480A1 (en) * 2014-08-01 2016-02-04 株式会社トクヤマ N-type aluminum nitride monocrystalline substrate
US10153276B2 (en) * 2014-12-17 2018-12-11 Infineon Technologies Austria Ag Group III heterojunction semiconductor device having silicon carbide-containing lateral diode
US9666677B1 (en) * 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
CN109716508B (en) 2016-06-24 2023-08-15 克罗米斯有限公司 Polycrystalline ceramic substrate and method for manufacturing the same

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Publication number Publication date
JP2020512698A (en) 2020-04-23
KR20190133232A (en) 2019-12-02
US20190334015A1 (en) 2019-10-31
TWI803485B (en) 2023-06-01
EP3602635A4 (en) 2020-12-23
WO2018183374A1 (en) 2018-10-04
JP7190245B2 (en) 2022-12-15
CN110582852A (en) 2019-12-17
US10411108B2 (en) 2019-09-10
EP3602635A1 (en) 2020-02-05
CN110582852B (en) 2024-05-17
TW201838194A (en) 2018-10-16
US20180286964A1 (en) 2018-10-04

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