SG11201908769TA - Vertical gallium nitride schottky diode - Google Patents
Vertical gallium nitride schottky diodeInfo
- Publication number
- SG11201908769TA SG11201908769TA SG11201908769TA SG11201908769TA SG 11201908769T A SG11201908769T A SG 11201908769TA SG 11201908769T A SG11201908769T A SG 11201908769TA SG 11201908769T A SG11201908769T A SG 11201908769TA
- Authority
- SG
- Singapore
- Prior art keywords
- gallium nitride
- epitaxial
- nitride layer
- international
- type gallium
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title abstract 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract 8
- 230000008520 organization Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L29/872—Schottky diodes
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
WO 18/ 18337 4 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 04 October 2018 (04.10.2018) W I PO I PCT IiiimmoimiolollmonolomoniinociloimimiovoimIE (10) International Publication Number WO 2018/183374 Al (51) International Patent Classification: HOlL 29/872 (2006.01) HOlL 29/47 (2006.01) HO1L 29/45 (2006.01) (21) International Application Number: PCT/US2018/024629 (22) International Filing Date: 27 March 2018 (27.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/478,483 29 March 2017 (29.03.2017) US 15/936,305 26 March 2018 (26.03.2018) US (71) Applicant: QROMIS, INC. [US/US]; 2306 Walsh Av- enue, Santa Clara, California 95051 (US). (72) Inventors: ODNOBLYUDOV, Vladimir; c/o Qromis, Inc., 2306 Walsh Avenue, Santa Clara, California 95032 (US). AKTAS, Ozgur; c/o Qromis, Inc., 2306 Walsh Av- enue, Santa Clara, California 95051 (US). (74) Agent: LIU, Rong et al.; KILPATRICK TOWNSEND & STOCKTON LLP, Mailstop: IP Docketing-22, 1100 Peachtree Street, Suite 2800, Atlanta, Georgia 30309 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 2 I (3)) (54) Title: VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE (57) : A vertical Schottky diode includes an ohmic contact, a first epitaxial N-type gallium nitride layer physically contacting the ohmic contact and having a first doping concentration, and a sec- ond epitaxial N-type gallium nitride layer physically contacting the 520 518 first epitaxial N-type gallium nitride layer and having a second dop- ing concentration that is lower than the first doping concentration. 522 The vertical Schottky diode further includes a first edge termination region and a second edge termination region coupled to the second 510-1 516 epitaxial N-type gallium nitride layer and separated from each other 512 by a portion of the second epitaxial N-type gallium nitride layer, and a Schottky contact coupled to the portion of the second epitaxial N- type gallium nitride layer, and to the first edge termination region and the second edge termination region. Fla 5 500
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762478483P | 2017-03-29 | 2017-03-29 | |
US15/936,305 US10411108B2 (en) | 2017-03-29 | 2018-03-26 | Vertical gallium nitride Schottky diode |
PCT/US2018/024629 WO2018183374A1 (en) | 2017-03-29 | 2018-03-27 | Vertical gallium nitride schottky diode |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201908769TA true SG11201908769TA (en) | 2019-10-30 |
Family
ID=63670882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201908769T SG11201908769TA (en) | 2017-03-29 | 2018-03-27 | Vertical gallium nitride schottky diode |
Country Status (8)
Country | Link |
---|---|
US (2) | US10411108B2 (en) |
EP (1) | EP3602635A4 (en) |
JP (1) | JP7190245B2 (en) |
KR (1) | KR20190133232A (en) |
CN (1) | CN110582852B (en) |
SG (1) | SG11201908769TA (en) |
TW (1) | TWI803485B (en) |
WO (1) | WO2018183374A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102275146B1 (en) * | 2019-05-20 | 2021-07-08 | 파워큐브세미 (주) | Schottky diode and method for fabricating the same |
CN110676308B (en) * | 2019-10-12 | 2022-12-20 | 中国电子科技集团公司第十三研究所 | Preparation method of Schottky diode |
CN111146294B (en) * | 2019-12-05 | 2023-11-07 | 中国电子科技集团公司第十三研究所 | Schottky diode and preparation method thereof |
CN114864760A (en) * | 2021-02-03 | 2022-08-05 | 厦门三安光电有限公司 | Micro light-emitting diode and display panel |
CN114141884A (en) * | 2021-12-14 | 2022-03-04 | 上海集成电路制造创新中心有限公司 | Reconfigurable schottky diode |
WO2024137722A2 (en) * | 2022-12-19 | 2024-06-27 | Peiching Ling | Semiconductor structures and memory devices and methods for manufacturing the same |
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US6497763B2 (en) * | 2001-01-19 | 2002-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Electronic device with composite substrate |
JP2002305309A (en) | 2001-02-01 | 2002-10-18 | Hitachi Ltd | Semiconductor device and its manufacturing method |
JP5037003B2 (en) * | 2005-11-25 | 2012-09-26 | 一般財団法人電力中央研究所 | Schottky barrier diode and method of using the same |
JP2007305609A (en) * | 2006-04-10 | 2007-11-22 | Matsushita Electric Ind Co Ltd | Semiconductor device |
US7595241B2 (en) | 2006-08-23 | 2009-09-29 | General Electric Company | Method for fabricating silicon carbide vertical MOSFET devices |
TW200921776A (en) * | 2007-11-09 | 2009-05-16 | Powertech Technology Inc | Wafer cutting method, die structure and its multi-die package method |
JP5713546B2 (en) | 2008-09-08 | 2015-05-07 | 三菱電機株式会社 | Semiconductor device |
FR2977260B1 (en) | 2011-06-30 | 2013-07-19 | Soitec Silicon On Insulator | PROCESS FOR PRODUCING A THICK EPITAXIAL LAYER OF GALLIUM NITRIDE ON A SILICON SUBSTRATE OR THE LIKE AND LAYER OBTAINED BY SAID METHOD |
US9099547B2 (en) * | 2011-10-04 | 2015-08-04 | Infineon Technologies Ag | Testing process for semiconductor devices |
US8772901B2 (en) | 2011-11-11 | 2014-07-08 | Alpha And Omega Semiconductor Incorporated | Termination structure for gallium nitride schottky diode |
US8927999B2 (en) | 2011-11-21 | 2015-01-06 | Avogy, Inc. | Edge termination by ion implantation in GaN |
US8716716B2 (en) * | 2011-12-22 | 2014-05-06 | Avogy, Inc. | Method and system for junction termination in GaN materials using conductivity modulation |
JP5973470B2 (en) * | 2012-01-30 | 2016-08-23 | パナソニック株式会社 | Semiconductor device |
JP2013232564A (en) | 2012-04-27 | 2013-11-14 | National Institute Of Advanced Industrial & Technology | Semiconductor device and semiconductor device manufacturing method |
US8981432B2 (en) * | 2012-08-10 | 2015-03-17 | Avogy, Inc. | Method and system for gallium nitride electronic devices using engineered substrates |
US20140048903A1 (en) * | 2012-08-15 | 2014-02-20 | Avogy, Inc. | Method and system for edge termination in gan materials by selective area implantation doping |
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WO2014080820A1 (en) | 2012-11-26 | 2014-05-30 | 住友電気工業株式会社 | Schottky barrier diode and method for manufacturing same |
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US8937317B2 (en) | 2012-12-28 | 2015-01-20 | Avogy, Inc. | Method and system for co-packaging gallium nitride electronics |
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JP2015026669A (en) | 2013-07-25 | 2015-02-05 | 住友電気工業株式会社 | Nitride semiconductor device |
JP5818853B2 (en) * | 2013-10-15 | 2015-11-18 | 株式会社トクヤマ | Vertical nitride semiconductor device using n-type aluminum nitride single crystal substrate |
WO2016017480A1 (en) * | 2014-08-01 | 2016-02-04 | 株式会社トクヤマ | N-type aluminum nitride monocrystalline substrate |
US10153276B2 (en) * | 2014-12-17 | 2018-12-11 | Infineon Technologies Austria Ag | Group III heterojunction semiconductor device having silicon carbide-containing lateral diode |
US9666677B1 (en) * | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
US10297445B2 (en) | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
CN109716508B (en) | 2016-06-24 | 2023-08-15 | 克罗米斯有限公司 | Polycrystalline ceramic substrate and method for manufacturing the same |
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2018
- 2018-03-26 US US15/936,305 patent/US10411108B2/en active Active
- 2018-03-27 JP JP2019553299A patent/JP7190245B2/en active Active
- 2018-03-27 WO PCT/US2018/024629 patent/WO2018183374A1/en unknown
- 2018-03-27 SG SG11201908769T patent/SG11201908769TA/en unknown
- 2018-03-27 CN CN201880026850.5A patent/CN110582852B/en active Active
- 2018-03-27 EP EP18777226.4A patent/EP3602635A4/en active Pending
- 2018-03-27 KR KR1020197031947A patent/KR20190133232A/en not_active IP Right Cessation
- 2018-03-29 TW TW107110881A patent/TWI803485B/en active
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2019
- 2019-07-11 US US16/509,361 patent/US20190334015A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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JP2020512698A (en) | 2020-04-23 |
KR20190133232A (en) | 2019-12-02 |
US20190334015A1 (en) | 2019-10-31 |
TWI803485B (en) | 2023-06-01 |
EP3602635A4 (en) | 2020-12-23 |
WO2018183374A1 (en) | 2018-10-04 |
JP7190245B2 (en) | 2022-12-15 |
CN110582852A (en) | 2019-12-17 |
US10411108B2 (en) | 2019-09-10 |
EP3602635A1 (en) | 2020-02-05 |
CN110582852B (en) | 2024-05-17 |
TW201838194A (en) | 2018-10-16 |
US20180286964A1 (en) | 2018-10-04 |
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