SG11201907860QA - Method for producing polycrystalline silicon processed article - Google Patents

Method for producing polycrystalline silicon processed article

Info

Publication number
SG11201907860QA
SG11201907860QA SG11201907860QA SG11201907860QA SG11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA SG 11201907860Q A SG11201907860Q A SG 11201907860QA
Authority
SG
Singapore
Prior art keywords
polycrystalline silicon
silicon rod
carbon member
processed article
end portion
Prior art date
Application number
SG11201907860QA
Other languages
English (en)
Inventor
Ayao Akiyoshi
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11201907860QA publication Critical patent/SG11201907860QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Silicon Polymers (AREA)
SG11201907860QA 2017-03-08 2018-03-07 Method for producing polycrystalline silicon processed article SG11201907860QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017044202 2017-03-08
PCT/JP2018/008827 WO2018164197A1 (fr) 2017-03-08 2018-03-07 Procédé de production d'article traité de silicium polycristallin

Publications (1)

Publication Number Publication Date
SG11201907860QA true SG11201907860QA (en) 2019-09-27

Family

ID=63448681

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907860QA SG11201907860QA (en) 2017-03-08 2018-03-07 Method for producing polycrystalline silicon processed article

Country Status (8)

Country Link
US (1) US11332377B2 (fr)
EP (1) EP3578514A4 (fr)
JP (1) JP6998936B2 (fr)
KR (1) KR102361373B1 (fr)
CN (1) CN110352177B (fr)
SG (1) SG11201907860QA (fr)
TW (1) TWI781986B (fr)
WO (1) WO2018164197A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6373724B2 (ja) * 2014-11-04 2018-08-15 株式会社トクヤマ 芯線ホルダ及びシリコンの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960003734B1 (ko) 1990-06-27 1996-03-21 유니온 카바이드 코팅즈 서비스 테크놀러지 코포레이션 다결정 실리콘 제조에서의 스타터 필라멘트용 흑연 척 및 그 보호 방법
EP0529593B1 (fr) 1991-08-29 1996-02-14 Ucar Carbon Technology Corporation Madrin en graphite revêtu de carbone vitreux utile pour la fabrication de silicium polycristallin
KR100768147B1 (ko) 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
JP5431074B2 (ja) 2009-09-02 2014-03-05 東洋炭素株式会社 シード保持部材及びそのシード保持部材を用いた多結晶シリコン製造方法
JP5751748B2 (ja) 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
CN201598183U (zh) 2009-12-03 2010-10-06 江苏中能硅业科技发展有限公司 一种半导体材料棒材的洁净出料装置
DE102010003064A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Graphitelektrode
DE102011084372A1 (de) * 2011-10-12 2012-02-09 Wacker Chemie Ag Vorrichtung für die Abscheidung von polykristallinem Silicium auf Dünnstäben
DE102011089449A1 (de) * 2011-12-21 2013-06-27 Wacker Chemie Ag Polykristalliner Siliciumstab und Verfahren zur Herstellung von Polysilicium
JP5696063B2 (ja) 2012-02-02 2015-04-08 信越化学工業株式会社 多結晶シリコン棒搬出冶具および多結晶シリコン棒の刈取方法
DE102014201096A1 (de) * 2014-01-22 2015-07-23 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
JP6200857B2 (ja) * 2014-06-03 2017-09-20 信越化学工業株式会社 多結晶シリコンロッドの製造方法、多結晶シリコンロッド、および、多結晶シリコン塊
DE102014222883A1 (de) 2014-11-10 2016-05-12 Wacker Chemie Ag Polykristallines Siliciumstabpaar und Verfahren zur Herstellung von polykristallinem Silicium

Also Published As

Publication number Publication date
JPWO2018164197A1 (ja) 2020-01-23
TWI781986B (zh) 2022-11-01
CN110352177B (zh) 2023-08-01
KR20190120758A (ko) 2019-10-24
US11332377B2 (en) 2022-05-17
US20200010327A1 (en) 2020-01-09
KR102361373B1 (ko) 2022-02-10
EP3578514A4 (fr) 2020-10-07
TW201836979A (zh) 2018-10-16
JP6998936B2 (ja) 2022-01-18
EP3578514A1 (fr) 2019-12-11
CN110352177A (zh) 2019-10-18
WO2018164197A1 (fr) 2018-09-13

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