SG11201811673YA - Device for vertical galvanic metal deposition on a substrate - Google Patents

Device for vertical galvanic metal deposition on a substrate

Info

Publication number
SG11201811673YA
SG11201811673YA SG11201811673YA SG11201811673YA SG11201811673YA SG 11201811673Y A SG11201811673Y A SG 11201811673YA SG 11201811673Y A SG11201811673Y A SG 11201811673YA SG 11201811673Y A SG11201811673Y A SG 11201811673YA SG 11201811673Y A SG11201811673Y A SG 11201811673YA
Authority
SG
Singapore
Prior art keywords
substrate
international
vertical
going
berlin
Prior art date
Application number
SG11201811673YA
Other languages
English (en)
Inventor
Ray Weinhold
Original Assignee
Atotech Deutschland Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atotech Deutschland Gmbh filed Critical Atotech Deutschland Gmbh
Publication of SG11201811673YA publication Critical patent/SG11201811673YA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • C25D17/12Shape or form
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/026Electroplating of selected surface areas using locally applied jets of electrolyte
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08Electroplating with moving electrolyte e.g. jet electroplating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008Current shielding devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201811673YA 2016-08-23 2017-08-18 Device for vertical galvanic metal deposition on a substrate SG11201811673YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16185396.5A EP3287550B1 (en) 2016-08-23 2016-08-23 Device for vertical galvanic metal deposition on a substrate
PCT/EP2017/070942 WO2018036924A1 (en) 2016-08-23 2017-08-18 Device for vertical galvanic metal deposition on a substrate

Publications (1)

Publication Number Publication Date
SG11201811673YA true SG11201811673YA (en) 2019-03-28

Family

ID=56802294

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201811673YA SG11201811673YA (en) 2016-08-23 2017-08-18 Device for vertical galvanic metal deposition on a substrate

Country Status (10)

Country Link
US (1) US10604861B2 (pt)
EP (1) EP3287550B1 (pt)
JP (1) JP6650072B2 (pt)
KR (1) KR101978627B1 (pt)
CN (1) CN109477236B (pt)
PH (1) PH12019500357A1 (pt)
PT (1) PT3287550T (pt)
SG (1) SG11201811673YA (pt)
TW (1) TWI673393B (pt)
WO (1) WO2018036924A1 (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6971922B2 (ja) * 2018-06-27 2021-11-24 株式会社荏原製作所 基板ホルダ
EP3828316B1 (en) * 2019-11-26 2023-09-13 Semsysco GmbH Distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate
TWI746231B (zh) 2020-10-27 2021-11-11 財團法人工業技術研究院 重布線結構及其形成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6811669B2 (en) * 2002-08-08 2004-11-02 Texas Instruments Incorporated Methods and apparatus for improved current density and feature fill control in ECD reactors
EP1391540A3 (en) 2002-08-08 2006-10-04 Texas Instruments Incorporated Methods and apparatus for improved current density and feature fill control in ECD reactors
US20040084318A1 (en) * 2002-11-05 2004-05-06 Uri Cohen Methods and apparatus for activating openings and for jets plating
DE10345376B4 (de) * 2003-09-30 2009-04-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System zum automatischen Steuern einer Stromverteilung einer Mehrfachanodenanordnung während des Plattierens eines Metalls auf eine Substratoberfläche
US20120305404A1 (en) * 2003-10-22 2012-12-06 Arthur Keigler Method and apparatus for fluid processing a workpiece
US7517642B2 (en) 2004-12-30 2009-04-14 Intel Corporation Plane waves to control critical dimension
DE102007026633B4 (de) * 2007-06-06 2009-04-02 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von plattenförmiger Ware
KR20120129125A (ko) * 2011-05-19 2012-11-28 삼성전자주식회사 반도체 기판의 전기 도금 장치 및 방법
JP2015518520A (ja) * 2012-04-11 2015-07-02 ティーイーエル ネックス,インコーポレイテッド 試料を流体処理するための方法および機器
EP2746433B1 (en) * 2012-12-20 2016-07-20 ATOTECH Deutschland GmbH Device for vertical galvanic metal, preferably copper, deposition on a substrate and a container suitable for receiving such a device
EP2746432A1 (en) * 2012-12-20 2014-06-25 Atotech Deutschland GmbH Device for vertical galvanic metal deposition on a substrate
CN104233410A (zh) 2013-06-24 2014-12-24 马悦 在衬底上电化学沉积金属的装置

Also Published As

Publication number Publication date
PH12019500357B1 (en) 2019-11-11
US10604861B2 (en) 2020-03-31
EP3287550A1 (en) 2018-02-28
TWI673393B (zh) 2019-10-01
CN109477236A (zh) 2019-03-15
JP6650072B2 (ja) 2020-02-19
EP3287550B1 (en) 2019-02-13
JP2019528378A (ja) 2019-10-10
WO2018036924A1 (en) 2018-03-01
US20190292679A1 (en) 2019-09-26
KR101978627B1 (ko) 2019-05-14
PH12019500357A1 (en) 2019-11-11
PT3287550T (pt) 2019-05-30
CN109477236B (zh) 2019-12-27
KR20190025725A (ko) 2019-03-11
TW201816193A (zh) 2018-05-01

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