SG11201811122UA - Quartz glass crucible and manufacturing method thereof - Google Patents

Quartz glass crucible and manufacturing method thereof

Info

Publication number
SG11201811122UA
SG11201811122UA SG11201811122UA SG11201811122UA SG11201811122UA SG 11201811122U A SG11201811122U A SG 11201811122UA SG 11201811122U A SG11201811122U A SG 11201811122UA SG 11201811122U A SG11201811122U A SG 11201811122UA SG 11201811122U A SG11201811122U A SG 11201811122UA
Authority
SG
Singapore
Prior art keywords
quartz glass
aluminum
content layer
layer
content
Prior art date
Application number
SG11201811122UA
Inventor
Hiroshi Kishi
Masanori Fukui
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of SG11201811122UA publication Critical patent/SG11201811122UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/32—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with aluminium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

WASHIZU & ASSOCIATES (SUM16006PCT/SG) OF THE DISCLOSURE Provided is a quartz glass crucible capable of withstanding a single crystal pull-up step undertaken for a very long period of time, such as multi-pulling, and a 5 manufacturing method thereof. A quartz glass crucible 1 includes: a high-aluminum- content layer 14B which is made of quartz glass having a relatively high average aluminum concentration and is provided to form an outer surface 10b of the quartz glass 10 crucible 1; and a low-aluminum-content layer 14A which is made of quartz glass having a lower average aluminum concentration than that of the high-aluminum-content layer 14B and is provided on an inner side of the high-aluminum- content layer 14B, wherein the low-aluminum-content layer 15 14A includes an opaque layer 11 made of quartz glass containing a large number of minute bubbles, and the high- aluminum-content layer 14B is made of transparent or translucent quartz glass having a lower bubble content than that of the opaque layer 11. 20
SG11201811122UA 2016-09-13 2017-08-17 Quartz glass crucible and manufacturing method thereof SG11201811122UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016178309 2016-09-13
PCT/JP2017/029543 WO2018051714A1 (en) 2016-09-13 2017-08-17 Quartz glass crucible and production method therefor

Publications (1)

Publication Number Publication Date
SG11201811122UA true SG11201811122UA (en) 2019-01-30

Family

ID=61618820

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201811122UA SG11201811122UA (en) 2016-09-13 2017-08-17 Quartz glass crucible and manufacturing method thereof

Country Status (8)

Country Link
US (1) US10822716B2 (en)
JP (2) JP6699741B2 (en)
KR (2) KR102253602B1 (en)
CN (2) CN113897669B (en)
DE (1) DE112017004599B4 (en)
SG (1) SG11201811122UA (en)
TW (2) TWI651439B (en)
WO (1) WO2018051714A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7157932B2 (en) * 2019-01-11 2022-10-21 株式会社Sumco Silica glass crucible manufacturing apparatus and manufacturing method
JP7172844B2 (en) * 2019-05-13 2022-11-16 株式会社Sumco Silica glass crucible for pulling silicon single crystal and its manufacturing method
JP6752464B1 (en) * 2019-06-27 2020-09-09 Ｆｔｂ研究所株式会社 Crucible
KR20230081722A (en) 2020-12-18 2023-06-07 가부시키가이샤 사무코 Quartz glass crucible and its manufacturing method and silicon single crystal manufacturing method
CN115246704A (en) * 2021-04-27 2022-10-28 新沂市中鑫光电科技有限公司 Method for eliminating impurity elements in transparent layer of quartz crucible
WO2023049228A1 (en) * 2021-09-22 2023-03-30 Momentive Performance Materials Quartz, Inc. Opaque quartz and method of making the same
CN116081928A (en) * 2023-01-31 2023-05-09 宁夏鑫晶新材料科技有限公司 Quartz crucible preparation method and quartz crucible
CN118308780B (en) * 2024-06-11 2024-08-06 浙江美晶新材料股份有限公司 Quartz crucible and preparation method and application thereof

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Also Published As

Publication number Publication date
CN113897669B (en) 2023-11-07
TWI674247B (en) 2019-10-11
KR102253602B1 (en) 2021-05-18
KR102165896B1 (en) 2020-10-14
JP2020105071A (en) 2020-07-09
JPWO2018051714A1 (en) 2019-04-04
US10822716B2 (en) 2020-11-03
KR20200105982A (en) 2020-09-09
US20190316271A1 (en) 2019-10-17
TW201920012A (en) 2019-06-01
JP6699741B2 (en) 2020-05-27
JP6973554B2 (en) 2021-12-01
WO2018051714A1 (en) 2018-03-22
CN109563639B (en) 2021-10-26
DE112017004599B4 (en) 2022-11-03
CN109563639A (en) 2019-04-02
KR20190002594A (en) 2019-01-08
TW201812119A (en) 2018-04-01
DE112017004599T5 (en) 2019-08-29
TWI651439B (en) 2019-02-21
CN113897669A (en) 2022-01-07

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