CN1890407A - Quartz crucibles having reduced bubble content and method of making thereof - Google Patents
Quartz crucibles having reduced bubble content and method of making thereof Download PDFInfo
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- CN1890407A CN1890407A CN 200480036216 CN200480036216A CN1890407A CN 1890407 A CN1890407 A CN 1890407A CN 200480036216 CN200480036216 CN 200480036216 CN 200480036216 A CN200480036216 A CN 200480036216A CN 1890407 A CN1890407 A CN 1890407A
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Abstract
A quartz crucible having reduced / controlled bubble content is disclosed, comprising an outer layer and an inner layer doped with elements and compounds that: a) react with oxygen and nitrogen'at or near the fusion temperature of quartz; and b) form compounds that are thermally stable at temperatures of above 1400 DEG C and chemically stable in a SiO2 environment. A method to make a crucible having controlled bubble content is also disclosed, the method comprises the step of forming a crucible having an inner layer doped with a material that reacts with residual gases in the bubble such as nitrogen and oxygen and thus consume the gases in the bubbles and empty them in the fusion process.
Description
The cross reference of related application
Do not have
Technical field
The fused quartz crucible that is used for growing single-crystal silicon that the present invention relates in semi-conductor industry, use, and the method that is reduced in the bubble concentration on nearly surface in the quartz crucible that uses in the monocrystalline silicon growing.
Background technology
Silicon single crystal, its parent material for making as most of semi-conductor electricity sub-elements is prepared by so-called Czochralski (" Cz ") method usually.Adopt the Cz method, the crystalline growth is most of usually to be finished in crystal pulling furnace, the crucible and it is melted by the well heater around the crucible side wall outside surface of wherein polysilicon (" polysilicon ") being packed into.Crystal seed contacted with the silicon of fusing and single crystal rod is extracted out via crystal puller and grown.
Because quartzy purity, temperature stability and chemical resistant properties, the crucible that uses in traditional crystal puller is made of quartz usually.U.S. Patent No. 4,416 discloses a kind of method of making quartz crucible in 680, wherein quartz raw material is incorporated in the empty mould of rotation.After introducing starting material, will introduce in the mould that causes quartzy thawing such as the heating source of electric arc.In heating, the gas in the process that continues rotation in the outside of mould applies vacuum extraction gap is to reach the purpose of eliminating the space.During fusing and rotation, keep vacuum.Thereafter, by outside mould, using pressurized gas to replace vacuum that the crucible of finishing is discharged.The residual gas of work in-process such as carbon, hydroxyl and analogue thereof can cause forming undesirable bubble in silica glass.
In crystal growing process, the crucible inwall is exposed to the decomposition that the high temperature silicon melt causes the reaction of silicon melt and quartz crucible and causes the crucible side wall internal surface for a long time.This makes the interior bubble of crucible side wall be exposed to the silicon of fusing.As a result, silicon melt continues to be dissolved in the crucible wall, and therefore dissolves in the walls.To a certain extent, bubble wall rupture and the avalanche of wall possibility discharge the interior gas of bubble and the quartz particles of crucible and/or bubble sidewall simultaneously and enter melt.So, particle can damage single crystal structure, therefore limits crystal growth monocrystalline output.In addition, can be the position of gas nucleation along crafters or the bubble space that the crucible internal surface exists.When the gas nucleation and when growing into small bubbles, those bubbles can enter the silicon in the growth, cause crystal to have the space, fall short of specifications.In order to obtain acceptable crystal property up to specification, reduction or the bubble of eliminating in the crucible will guarantee that intracrystalline space minimizes.
The approach that air bubble problem in the various processing crucible wall is arranged.United States Patent(USP) Nos. 4,935,046 and 4,956,208 propose to deposit SiCl by chemical vapour deposition on crucible surface
4Layer.U.S. Patent application No.20020166341 instruction is used by rapid diffusion gas such as the helium of quartz sand or hydrogen to replace the residual gas in the quartz sand space.U.S. Patent No. 6,187,079 discloses the technology that a kind of manufacturing has the quartz crucible of tungsten doped layer, and this doped layer is similar to the performance of the no bubble layer of crucible.Doping is to be undertaken by one of following: the tungsten vapour source that a) diffuses into the tungsten of crucible internal surface; B) solution of coating tungsten compound in organic solvent; Or c) the tungsten precursor solution is mixed in the silica, on the internal surface of crucible, forms the layer of 100ppba at least.Patent application No.EPO 693461A1 discloses a kind of diverse ways, and it is by control SiO
2The quantity of copper, chromium and nickel to 0.5ppb or still less in the feed, iron is to 120ppb or still less reach sodium to 20ppb or still less, makes no small bubbles gathering and highly purified quartz crucible.
Still need a kind ofly to control bubble/the improve method of bubble stability at the quartz crucible that is used for crystal growing process.
Summary of the invention
The present invention relates to a kind of by with the bubble in element and the compound doped crucible control quartz crucible/the improve method of the bubble stability in the quartz crucible, this element or compound: a) or near under the quartzy temperature of fusion with oxygen and nitrogen reaction; And b) be formed on be higher than under 1500 ℃ of temperature thermally-stabilised and at SiO
2Chemically stable compound in the environment.In one embodiment, the crucible internal layer that only mixes.
In an embodiment of invention, described element and compound are selected from following: aluminium, titanium, chromium, iron, zinc, molybdenum, magnesium, calcium, scandium, yttrium, lanthanum, zirconium, hafnium, cerium, vanadium, niobium, tantalum, their suboxide and low nitride.
The invention still further relates to and utilize element and compound doped quartz crucible, this element and compound: a) with oxygen, nitrogen, carbon monoxide and carbonic acid gas or react near under the quartzy temperature of fusion; And b) be formed on be higher than under 1400 ℃ of temperature thermally-stabilised and at SiO
2Chemically stable compound in the environment.
In one embodiment of the invention, quartz crucible comprises the outer layer segment or the layer of unadulterated crystal quartz, and by synthetic or the quartzy liner of making of mineral crystal, and the internal layer of the quartz crucible that wherein only mixes.
In another embodiment of the invention, the tantalum powder that quartz crucible or its internal layer utilization have about 50 microns or smaller szie mixes, and makes concentration of dopant reach about 50 to 500ppmw.
Description of drawings
Fig. 1 is the synoptic diagram that is suitable for forming adulterated quartz crucible equipment of the present invention.
Embodiment
The applicant has developed the method that the bubble stability in the quartz crucible was controlled/improved to known device in employing this area of a kind of novelty.
Here used sand lump, synthetic sand, silica grain, synthetic silica grain, natural quartz, quartz sand and silicon-dioxide are used to describe the crystal quartz raw material (from synthetic or natural resource) of the quartz crucible that forms fusing convertibly.The size of this raw material can be the 10-500 micron, and average coarse grain size is approximately 200 microns.This raw material also can comprise such as materials such as basic metal, alkaline-earth metal, silicite, quartz sand, alpha-quartz, cristobalite and analogues thereof.
In one embodiment of the invention, quartz crucible has the internal layer of the outer and different silica glass materials of silica glass, for example internal layer of the skin of natural quartz material and synthetic quartz material.In another embodiment, crucible adopts same material, and it passes through to adopt electric-arc heating, the synthetic or natural quartz material acquisition of fusing and casting.
Here used " internal layer " refers to the inner surface area of quartz crucible, the perhaps layer that contact with the semiconductor material of fusing, and this semiconductor material is used for the growing crystal semiconductor material, and for example silicon crystal is grown.This internal layer can be the internal layer of the crucible of the internal layer of individual layer quartz crucible (with the contact of fused semiconductor material) or the different layers with two or more at least different quartz materials/composition.
The applicant has been found that by the internal layer with some selected material doped crucible of the present invention, residual gas such as nitrogen and oxygen reaction in this material and the bubble, and therefore consume the interior gas of bubble and in melting process emptying they.This can make bubble break flat effectively or be flattened.
Select dopant material so that nitride that forms and oxide compound are stable and/or in the temperature range of using crucible in the temperature range that forms crucible, that is, or be higher than under 1400 ℃ the temperature stable.In one embodiment, select dopant material so that nitride that forms and oxide compound be higher than under 1420 ℃ the temperature thermally-stabilised.In another embodiment, select material to make it be used for 1450 ℃ temperature.
In one embodiment, doping agent is the powdered material with about 50 microns or smaller szie.In another embodiment, doping agent is the powdered material of 30 microns or smaller szie.
The example of dopant material comprises the material of metallic aluminium, metal titanium, metal tantalum, metal zirconium, metal hafnium, vanadium metal, metal niobium, chromium metal, metallic zinc, cadmium metal, suboxide and low nitride, partial oxidation, the material and the combination thereof of part nitrogenize.The example of suboxide comprises Ce
2O
3, VO, VO
2Or TiO.The example of combination comprises alloy, such as TaNb.
Dopant material is easy to buy.Example comprises high purity or ultra-high purity metal-powder with 50 microns or smaller szie, have the high purity molten metal oxide compound and the suboxide powder of 5 microns or smaller szie, can be at www.micronmetals.com from Atlantic Equipment Engineers, buy from Johnson Matthey Alfa-Aesar and other suppliers.
Add doping agent with such amount, make its concentration enough low not influence crystalline nature, still enough high again to influence the crucible bubble structure and therefore to help monocrystalline output.In one embodiment, serve as that about 75ppm weight (ppmw) is added doping agent to the amount of about 500ppmw with the concentration in the crucible internal layer.In another embodiment, add doping agent, make concentration arrive about 400ppmw for about 100ppmw at the crucible internal layer with enough amounts.In the 3rd embodiment, this amount is higher than 100ppmw.In the 4th embodiment, this amount is 400ppmw or still less.
Can before quartz sand charging fusing doping agent be added to form the crucible internal layer, perhaps it can be spread in the crucible to provide doping agent on the crucible internal layer after fusing.
Fig. 1 is the synoptic diagram of an embodiment of equipment 10 that forms the quartz crucible 12 of fusing, in U.S. Patent No. 4,416, has described this equipment more all sidedly in 680.In melting process, the crystal raw material is added in the formwork of empty rotation forming the crucible shape, and then use arc-melting.
Among Fig. 1, empty metal casing mould 14 is installed on the axle 16 rotatably so that the device of each generation quartz crucible fusing to be provided.The casing assembly of electric motor driving parts 18 these fusings of rotation remains on the inwall of metal casing 14 to make quartzy sand lump by centrifugal force.Inwall to shell 14 provides hole 20, and being melted under the vacuum condition of moulding sand lump taken place with the air bubble content in the quartz member that reduces fusing.Such vacuum operating is realized by being connected to vacuum pump 24 from the feed line 22 that metal casing 14 is drawn.
The electrode assemblie 25 that will contain power supply and electrode (not shown) be installed in movably metal casing 14 around so that the suitable heat source that is melted in the silica sand body that shell 14 contains to be provided.
In operation, a large amount of quartz sand is deposited on the multi-hole type body 26 that has the crucible structure in the metal casing 14 of rotation with formation.Between the melting period of the electric arc that the electrode assemblie of subsequently utilization association provides, vacuum pump 24 withdrawing gas from porous sand mold body.But the time variable control electrode assemblie is withdrawn into its height originally simultaneously so that it is fallen automatically behind the quartz container that forms fusing in metal casing during the fusing step.After finishing fusing and forming this part, the part of cooling fusing and from melting vessel, removing.After removing, whole assembly can be prepared down batch circulation.
(not shown) in one embodiment of the invention, hole 20 are the form of the even spaced openings around shell 14, make helium or hydrogen (replacement air) pass through quartz sand.In case the crucible inwall forms shell, helium or hydrogen help to replace other gas that can be present in the space.Provide vacuum from a series of perforates or the mouth of shell 14 bottoms, produced the air-flow of discharging residual gas in the sand thus.
Have the outer of unadulterated silica glass and have in the embodiment of crucible of internal layer of silica glass of " doping " of bubble density of stable/control in manufacturing of the present invention, " pure " or the quartz sand material that do not mix at first are injected in the mould 14 by particle funnel (not shown).Can there be the particle funnel of a plurality of meterings to be used to add adulterated and unadulterated quartz sand feed streams.The metal funnel is equipped with feeder sleeve and the valve quartz sand flow with metering 14 inside from the funnel to the metal pattern.The rotation of the mould 14 by electric motor driving 18 provides enough power so that the silica granule that injects remains on the internal surface of mould 14.Shape is generally used for making skin and/or the moulding of sand feed by the determined scraper plate (not shown) of the internal surface of mould 14.By this way, can form the crucible layer to selected thickness, in an example, about 0.875 cun thickness.
In one embodiment of the invention, between the electrode of assembly 25, produce electric arc.Therefore produce the heating zone in the inside of metal casing 14, the temperature of silica granule reaches 1800-2200 ℃.This heat is used to melt the silica granule in the mould.Melt by particle to distant place or farther surface from nearly (inner or nearest surface) with respect to the electrode of assembly 25.The mechanism of the progressive fusing by the silicon grain layer is that those skilled in the art are known.
In an embodiment of fusing step, floor sand (backing sand) is injected mould shape, geometry and other fusing details be the suitable position of fusing mould 14 known to the those skilled in the art.After floor sand was arranged in the suitable position of spinning block, (lining sand) was injected into suitable position in a similar manner with lining sand.Here used lining sand is in order to control and improve bubble density and stable with the adulterated sand of additive of the present invention.In case all sand is arranged in the suitable position of spinning block, with electric arc discharge between the eletrode tip and with sand the solid fused silica body of molten crucible for the fusing used on the semi-conductor industry.
In another embodiment of fusing step, all sand is injected the suitable position of fusing mould 14, make complete sand preform with adulterated sand, the additive that promptly adds sand is present in all interior sand of mould.In case all sand is arranged in rotation mould suitable position, with electric arc in discharge between eletrode tip and with the molten solid fused silica body of sand for the fusion crucible that is used for using on the semi-conductor industry.
In an embodiment again of fusing step, floor sand is injected suitable position and floor sand is melted is solid fused silica crucible body.After the skin fusing, then form internal layer.In this embodiment, the silica granule that will have a doping agent of the present invention by feeder sleeve and control valve internally the silica granule funnel inject outer field mould 14 with formation.The electric arc that generates between the electrode of assembly 25 produces strong argon-arc plasma field, the inside silica granule of partial melting to extrapolation, make it deposit on the limit on surface of mould 14 and bottom, the i.e. outer field internal surface of crucible.Internal particle by the arc flame partial melting deposits and is melted to the crucible skin, therefore forms the internal layer of desirable thickness.In one embodiment, the about 0.5-0.7mm of interior layer thickness.
Deposition by above-mentioned adulterated silica granule and fusing step form after the internal layer, have enough structure rigidities to remove and indeformable cooling crucible about 30-90 second or more time from mould 14 in order to make it.In another embodiment, can make crucible keep selected period or time, the speed cooling crucible that perhaps can control in chosen temperature.
In another embodiment of the individual layer quartz crucible of making adulterated quartz material, doped silica particle at first, promptly admixed with additives is present in all sand feed.Then with the fusing of adulterated quartz powder and with the high power electric arc sintering and be molded as crucible, that it is had is stable/internal layer of the bubble density controlled.
In one embodiment, replace the doping agent in (or except) silica granule feed, can be putting into furnace chamber by the crucible of the fusing of the formation of deposits of silica granule in the above step about 20 minutes to about 10 hours, wherein, air in the chamber is saturated by dopant material of the present invention institute, for example Mo steam or Mo
2O
5Steam, it contacts and is diffused in the quartz with the surface of crucible then, gives extra treatment time and concentration of dopant with the bubble formation in control/stable/reduction crucible internal layer.
Last treatment step of the present invention can comprise polishing or polishing, side cut, the cleaning of crucible outside surface and pack with the protection crucible.
In one embodiment, crucible has the degree of depth or the thickness of the about 25mm of about 8mm-, and it is evenly mixed by doping agent of the present invention.In another embodiment, maximum ga(u)ge is 20mm.In another embodiment, crucible has the unadulterated skin of 5mm-20mm and the adulterated lining of the about 20mm of about 3mm-.In a further embodiment, crucible has thickness or the unadulterated skin of the degree of depth and the unadulterated internal layer of the 1-10mm degree of depth of about 0.5mm-12mm.
In one embodiment of the invention, crucible has internal layer or at least one and has inner surface portion less than 0.003 average bubble volume density ratio, and it is with the ratio measure of bubble volume and crucible sample area volume.This sample area is to obtain from the 1-2mm degree of depth of the internal surface that contacts with the semiconductor material melt.In second embodiment, this layer has the average bubble density ratio less than 0.002.In the 3rd embodiment, crucible has the average bubble density ratio less than 0.001.In the 4th embodiment, crucible has the average bubble density ratio less than 0.00075.
Embodiment. provide embodiment to be used to explain the present invention at this but do not limit the scope of the invention.
Embodiment 1. makes the similar size of 22 inches specific diameter with each of four crucible A, B, C, D and E.Make all crucibles with the similar skin that contains the pure natural silica granule.All crucible internal layers also comprise natural silica granule.Mix if desired, mix, for example, the silica granule of measured quantity and doping agent put into Plastic Bottle and put into the Turbula solid mixer and rolled about 30 minutes by technology known in the art.By this doping agent premix is put into the larger container that fills relatively large unmixing sand, for example, in the bucket, with this mixture of further dilution.Then with this heterogeneous body mixture by further rolling blend and homogenizing.Can repeat this program up to the concentration of dopant that obtains to wish.
In this embodiment, according to U.S. Patent No. 4,911, crucible A is made in 896 instruction, the small size spheric silica Metallic Solids of 350 mesh size of 50ppm weight is also contained in the higher wall zone of this crucible internal layer, and whole metal contents of crucible internal layer remain on 100ppm or still less.
The whole internal layer of crucible B is doped with the tantalum powder of buying from Atlantic EquipmentEngineers (" AEE ") with 99.8% purity and 1-5 micron particle size of 300ppm weight.
The whole internal layer of crucible C is doped with the aluminium powder form of 250ppm weight, and it is the white gray hexagonal that arrives, and also buys from AEE, has the particle size of 1-5 micron.
The whole internal layer of crucible D is doped with the niobium powder of 200ppm weight, and it is the white gray hexagonal that arrives, and also buys from AEE, has the particle size of 1-5 micron.
About crucible E, the crucible that will buy from General Electric Company with " V3B " with non-impurity-doped internal layer by metallic vapor annealing 1 hour in the saturated furnace chamber, tantalum for example, one hour, at least about the concentration of dopant of 100ppm.
Simulation CZ-technology is implemented vacuum bakeout to crucible A-E and is handled, and checks the internal layer of each crucible thereafter.Each of the zone of the internal surface of crucible B, C, D and E presents and has the lining zone that is less than the standard air bubble growth.Form aspect the bubble quantity and bubble with aspect the growth of the size of bubble established or that in use become by karyomorphism, all limited the growth of bubble more.On the contrary, observe crucible A aspect bubble quantity and bubble and more air bubble growth is being arranged aspect the increment of bubble size, this bubble is present in internal layer area.
Embodiment 2. in this embodiment, employing concentration is that mixing as the above-mentioned tantalum that is used for crucible B of 200ppm, 250ppm and 300ppm made crucible, and is labeled as B ', C ' and D '.Crucible A ' buys from General Electric Company with V3B.
From the sample of 1 " * 2 " of crucible A '-D ' cutting-out 1560 ℃ of bakings 24 hours down.Adopt opticmicroscope to obtain " amount " or the volume that digital picture can quantize bubble thus.From the small portion of 1 " * 2 " * 1 millimeter (1 " by 2 " by 1millimeter), bubble is carried out artificial counting and measurement.In the various piece of sample, the number of bubbles of observing among adulterated crucible B '-D ' is about 1/5 of the middle quantity of unadulterated crucible A '.As above-mentioned measurement bubble density ratio, the result obtains the mean value of following bubble volume density ratio.
Sample bubble volume/cumulative volume
A′ 0.009707
B′ 0.000764
C′ 0.001004
D′ 0.000532
Though described the present invention with reference to preferred embodiment, those of ordinary skill in the art should understand without departing from the scope of the invention, can make various changes and can be equal to replacement to its key element.The invention is not restricted to disclosed specific embodiments, but will comprise all interior embodiments of scope of claims as enforcement best way of the present invention.
Here all references that relates to specially is hereby incorporated by.
Claims (14)
1. quartz glass crucible that is used to draw silicon single-crystal, described crucible contains the inner surface portion of the adulterated silica glass of useful metal-powder, this metal-powder: a) form metal oxide or metal nitride with oxygen and nitrogen reaction; And b) be formed on be higher than under 1400 ℃ of temperature heat-staple and at SiO
2Chemically stable compound in the environment.
2. the quartz glass crucible that is used to draw silicon single-crystal of claim 1, wherein said crucible contains the individual layer of the adulterated silica glass of useful described metal-powder.
3. the quartz glass crucible that is used to draw silicon single-crystal of claim 1, wherein said crucible contains:
The silica glass skin;
Has internal layer with the silica glass of the adulterated inner surface portion of described metal-powder.
4. the quartz glass crucible of each of claim 1-3, wherein said inner surface portion is mixed with metal suboxide or the low nitride of metal.
5. the quartz glass crucible of each of claim 1-4, wherein said inner surface portion is mixed with the tantalum powder of 50-500ppmw.
6. the quartz glass crucible of each of claim 1-5, wherein said inner surface portion are less than 40 microns the metal-powder that is selected from tantalum, niobium, vanadium, aluminium, titanium, chromium, iron, zinc, magnesium, calcium, molybdenum and tungsten with mean sizes and mix.
7. quartz glass crucible that is used to elongate silicon single-crystal, it has the bubble volume density less than 0.003 at the 1-2mm of distance internal surface degree of depth place.
8. the quartz glass crucible of each of claim 1-7, wherein said crucible has the bubble volume density less than 0.002 at the 1-2mm of distance internal surface degree of depth place.
9. a manufacturing is used to elongate the method for the quartz glass crucible of silicon single-crystal, its described method comprises molded step with crucible of the inner surface portion that contains the adulterated silica granule of useful metal-powder, this metal-powder: a) form metal oxide or metal nitride with oxygen and nitrogen reaction; And b) be formed on be higher than under 1400 ℃ of temperature heat-staple and at SiO
2Chemically stable compound in the environment.
10. the method for claim 9, wherein said crucible has the bubble volume density less than 0.003 at the 1-2mm of distance internal surface degree of depth place.
11. the method for claim 9-10, wherein said quartz glass crucible has internal layer and skin, and wherein said molded may further comprise the steps:
On the internal surface of the crucible mould that rotates, form described skin;
This metal-powder will be introduced in the crucible mould of described rotation: a) form metal oxide or metal nitride with the adulterated silica granule of metal-powder with oxygen and nitrogen reaction; And b) be formed on be higher than under 1400 ℃ of temperature heat-staple and at SiO
2Chemically stable compound in the environment;
Crucible interior in rotation generates the hot-zone, and wherein the described adulterated silica granule of partial melting and silica granule that will described partial melting at least are fused on the described skin formation internal layer at least in this hot-zone.
12. the method for each of claim 9-11, wherein said silica granule mixes with metal suboxide or the low nitride of metal.
13. the method for each of claim 9-12, wherein said silica granule mixes with the tantalum powder of 50-400ppmw.
14. the method for each of claim 9-13 is further comprising the steps of: described quartz glass crucible is put into furnace chamber, and atmosphere is saturated by material in its lumen, and this material a) forms metal oxide or metal nitride with oxygen and nitrogen reaction; And b) be formed on be higher than under 1400 ℃ of temperature heat-staple and at SiO
2Chemically stable compound in the environment.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US52648403P | 2003-12-03 | 2003-12-03 | |
| US60/526,484 | 2003-12-03 | ||
| US11/002,597 | 2004-12-02 |
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| CN1890407A true CN1890407A (en) | 2007-01-03 |
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| CN 200480036216 Pending CN1890407A (en) | 2003-12-03 | 2004-12-03 | Quartz crucibles having reduced bubble content and method of making thereof |
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| WO2012055195A1 (en) * | 2010-10-27 | 2012-05-03 | 杭州先进石英材料有限公司 | Quartz glass crucible and manufacturing method thereof |
| CN102485971A (en) * | 2010-12-01 | 2012-06-06 | 日本超精石英株式会社 | Vitreous silica crucible |
| CN102485972A (en) * | 2010-12-03 | 2012-06-06 | 日本超精石英株式会社 | Vitreous silica crucible |
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| CN102485971B (en) * | 2010-12-01 | 2015-01-07 | 日本超精石英株式会社 | Vitreous silica crucible |
| CN102485971A (en) * | 2010-12-01 | 2012-06-06 | 日本超精石英株式会社 | Vitreous silica crucible |
| CN102485972B (en) * | 2010-12-03 | 2014-07-09 | 日本超精石英株式会社 | Vitreous silica crucible |
| CN102485972A (en) * | 2010-12-03 | 2012-06-06 | 日本超精石英株式会社 | Vitreous silica crucible |
| CN102718399A (en) * | 2011-03-30 | 2012-10-10 | 连云港福东正佑照明电器有限公司 | Quartz crucible for gallium-arsenide crystal growth and preparation method thereof |
| CN102718399B (en) * | 2011-03-30 | 2015-07-15 | 连云港福东正佑照明电器有限公司 | Quartz crucible for gallium-arsenide crystal growth and preparation method thereof |
| CN102432197B (en) * | 2011-09-05 | 2013-12-11 | 徐州协鑫太阳能材料有限公司 | Repair pulp and method for repairing cracks of quartz crucible |
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| CN109563639A (en) * | 2016-09-13 | 2019-04-02 | 胜高股份有限公司 | Quartz glass crucibles and its manufacturing method |
| CN109563639B (en) * | 2016-09-13 | 2021-10-26 | 胜高股份有限公司 | Quartz glass crucible and method for producing same |
| CN108531978A (en) * | 2018-04-09 | 2018-09-14 | 江阴龙源石英制品有限公司 | A kind of large scale integrated circuit 5 layers of compound silica crucible and preparation method thereof and surface treatment method |
| CN108585450A (en) * | 2018-04-09 | 2018-09-28 | 江阴龙源石英制品有限公司 | 6 axis of one kind linkage silica crucible melting machine and its melting method |
| CN108531978B (en) * | 2018-04-09 | 2021-01-01 | 江阴龙源石英制品有限公司 | 5-layer composite quartz crucible for large-scale integrated circuit and preparation method and surface treatment method thereof |
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